C35J Search Results

STR WG 253

Abstract: L30A fci burndy y644m dieless hypress tube y644 y644 2N/STR WG 253
Contextual Info: SE211915 CONDUCTOR BOLT SIZE CATALOG NO. CODE CAWG YAZ1C-2TC14 *1 AUG Í J YAZ1C-2TC14-45 FIG. NO. B ±.06 C ±.04 1.38 T353 .67 75 1/4 [M63 n 7J H REF. E t. 02 .62 Cl 63 K DIA. ±.02 1.57 [403 .27 [73 1.90 [48J YAZ1C-2TC14-90 YAZ1C-2TC14E2 YAZ1C-2TC1 4E2-45

Y34A burndy hypress

Abstract: YAZ8C2TC1045 fci burndy y644m dieless hypress Y14MV y644 A69J
Contextual Info: 1 HEJtfTHS'nS" S E 2 1 1915 CONDUCTOR CATALOG NO. CODE AWG NAVY BOLT SIZE YAZV10-2TC10 FIG. NO. DIMENSIONS B ±.04 C ±.04 .69 [18] .36 [9] #10 YAZV10-2TC10-45 E ±.02 .62 [16] 14-10 YAZV10-2TC14-45 2^ 5mm2 STR 4mmi SOL 4mm2 STR H REF. .77 [20] .41 [10]

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E

C3502

Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Contextual Info: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

FPQ-132-0

Abstract: XC3020-CQ100 XC3020
Contextual Info: XC3020B Military Logic Cell Array Product Specification. S ee Note 1. FEATURES Part Number • M IL-S T D -883 Class B Processing. Complies with paragraph 1.2.1 • Field-programmable gate array • Low power CMOS static memory technology Logic Capacity

NFM21C

Abstract: DLW21SN900SL1 NFM55PC155F1H4 PLY10A8720R7D x band receiver BLM18AG601SN1 DLW5B dlp31sn121sl2 KU 03
Contextual Info: !お願い 製品によっては守らないと発煙、発火等にいたる可能性のある定格や!注意（保管・使用環境、定格上の注意、実装上の注意、取扱上の注意）を当PDFカタログに記載して おりますので必ずご覧ください。なお、当PDFカタログには、代表的な仕様のみを記載しておりますので、ご注文にあたっては詳細な仕様が記載されている納入仕様書の内容

9624DC

Abstract: ut 29627
Contextual Info: LSI Components PRODUCT SPECIFICATIONS RAYTHEON Field-Programmable Read-Only Memories Description 29000 Series Features R a y t h e o n ’s 290 00 S e r i e s of F ie ld Programmable Read-Only Memories includes most of the popular PR O M configurations in

str wg 753

Abstract: fci burndy y644m dieless hypress Burndy Y35 hypress FRAMATOME CONNECTORS BURNDY ELECTRICAL BCT500 Y34A burndy hypress Burndy Y34A Y644 C106J STR WG 253 Y7000BH
Contextual Info: REV, 061 9 95 T 5E211915 BOLT SIZE C :. 04 L-1 CODE AWG YAZ8C-2TC10 _L FIG. NO. < #8 AWG [10mm2 STR] .75 [19] #10 Y A Z 8 C - 2 T C 1 0-45 H MAX. E ±.02 ±.02 .41 .21 [10] [5] .62 [16] [M5] .91 [23] Y A Z 8 C -2TC10E2 Y A Z 8 C - 2TC10E2-90 .75 [19] #10

BA 4916

Abstract: LC35 LC35256A LC35256AM LC35256AS ic3525
Contextual Info: Ordering numbor : EN4916A LC35256A, AS, AM, AT-70/85/10 No. 4916A SAiYO 256K 32768 words x 8 bits SRAM with OE and C Ë Control Pins •rfi' " Overview 28-pin TSOP (8 x J ^ " i ^ | | Ä i c j p a ^ g c : LC35256AT Shared I/O pi ns, three -sta t|jgu tp u |

C35M

Abstract: C35D cell phone C35J single LOAD CELL C35A C35B C35G C35K
Contextual Info: C35A – C35M W TE PO WE R SEM IC O ND UC TO R S 35A AUTOMOTIVE RECTIFIER CELL Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX B D E C Mechanical Data ! ! ! ! A Case: Protected with Silicon Rubber

C35B

Abstract: C35A diode c35 C35D C35G C35J C35K free diode
Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K 35A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber