LC35 Search Results

as15 G

Abstract: AS15 G IC AS15 U AS15 f ic as15 LC3516A-15 LC3516AL LC3516AM as15 h as15- f
Contextual Info: F No.2360 A sy n c h ro n o u s'S ilic o n Gate CMOS LSI r i LC3516A,AM,AS/LC3516flL• AML.AS I 2048 W o rd s x 8 B its CMOS S ta tic RAMs - LC3516A series are fully asynchronous silicon gate CMOS static RAMs orga­

10ST10

Abstract: lq55
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

a13493

Abstract: a1349 A13492 A13488 66244 A1348
Contextual Info: Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M 131,072 words x 8 bits SRAM Preliminary Overview Package Dimensions The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with

70513

Contextual Info: Ordering number : ENN*7051 CMOS IC LC35W256GM, GT-70U 256K 32768-words x 8-bit SRAM with OE and CE control pins Preliminary Overview Package Dimensions The LC35W256GM-70U and LC35W256GT-70U are 32768-words by 8-bit asynchronous silicon gate low supply voltage CMOS SRAMs. These devices adopt a

LC35256

Abstract: 3221-TSOP28
Contextual Info: Ordering number : ENN*6302 CMOS IC LC35256FM, FT-55U/70U 256K 32768 words x 8 bits SRAM Control Pins: OE and CE Preliminary Overview Package Dimensions The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors

LC3564Q-10

Abstract: sanyo vcc 3924 WC-260 LC3564Q LC3564Q-70 LC3564QM70 LC3564QM
Contextual Info: I Ordering number EN 3924B LC3564Q, QM, QS CM OS LSI 64 Kbit 8192 x 8 CMOS Static RAM Pin A ssign m e n t O verview LC3564Q scries dcviccs are silicon-gate, CMOS static RAMs configured as 8192 x 8 bits. They incorporate an output enable for high-speed memory access, two chip

L0517

Abstract: LC3517B-12 LC3517B-15 3045B-MFP24 LC3517B BSL 006 l0517bms12 sanyo lc3517bm LC3517B15
Contextual Info: 1Otdnrina nurnbe': EN3752 | CMOS LSI LC3517B, BM, BS, BL, BML, BSL 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517B series devices are silicon-gate CMOS, static RAM ICs configured as 2048 words x 8 bits. They incorporate an output enable for high-speed memory

2716 eprom

Abstract: TA60C LC3516 LC3516D LC3516L LC3517D 3011a
Contextual Info: LC351 6 c-mos LSI N o .4 0 0 4 “ ' 2 0 4 S W O R D S X 8 BITS CMOS STATIC R AM 3 0 1 1A The LC3516 is an unclocked high-speed static CMOS static RAM that is organized as 2048 words x 8 bits and operates from a single 5V supply. It has tw o inputs: C El input chip enable input for high-speed access

IC351

Abstract: LC3517A-15 AS15 U as15 G LC3517A-10 LC3517AML ix3517asl LC3517 LC3517A LC3517AL
Contextual Info: SANYO SEMICONDUCTOR CORP 53E D • 7cîcî707b 00100^3 fl?T ITSAJ r - ^ t i- 2 3 ^ lOdannç numbr. EN23611 i SANYO F CMOS LSI LC3517A. AM. AS. AL, AML, ASL 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517A series devices are silicon-gate CMOS, static

ST70

Abstract: LC3564S 4794B
Contextual Info: Ordering number : EN 4794B LC3564S, SS, SM, ST-70/85/10 64K 8192 words 8 bits SRAM

LC3517

Abstract: LC3517B LC3517B-12 lc351 u351 BS1215 sanyo lc3517bm
Contextual Info: SANY O S E M I C O N D U C T O R CORP S3E D • 7^707b 00100^ 2^6 M T S A J I Ordering number EN37521 CMOS LSI F SAW O i LC3517B. BM. BS, BL, BML, BSL. 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517B serves devices art silicon-gate CMOS, static

LC3564QM

Abstract: LC3564Q-10 sanyo vcc 3924 lc3564q10
Contextual Info: b3E D 7 T cì7G7b TSAJ DD1S337 57Û LC 3564Q , QM, QS CMOS LSI 64 Kbit 8192 x 8 CMOS Static RAM OVERVIEW PINOUT LC3564Q series devices are silicon-gate, CMOS static RAMs configured as 8192 x 8 bits. They incorporate an output enable for high-speed memory access, two chip

LC3514A-15

Abstract: LC3514AL-15 LC3514AL-20 RAM 2114 2114 Ram pinout 18 LC3514A LC3514AL15K LC3514AL-20K ci 2114 LC3514A15K
Contextual Info: F N o. 2881 i L C 3514A - i 5K,2qk/L C 3514A L - i 5K,20K CMOS LSI 1024 Words X 4 Bits High-Speed CMOS Static RAM G e n e ra l D e sc rip tio n The LC3514A/LC3514AL are fully asynchronous CMOS static RAMs organized as 1024 wordsX 4 bits. They are compatible with worldwide standard N-channel 2114-type 4K SRAMs and have a full CMOS

Contextual Info: Ordering number:EN4794A CMOS LSI I N0.4794A LC3564S, SM, SS-70/85/10 64K 8192 words x 8 bits SRAM O ve rview The LC3564S, LC3564SM, and LC3564SS are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type SRAMS with a sixtransistor memory cell and feature high-speed

Contextual Info: I Ordering number : EN ¡K4916 ¡ CMOS LSI LC35256A, AS, AM-70/85/10 256K 32768 words x 8 bits^SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM aie 32768 words x 8-bils asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CM OS memory c e ll, low

2114 static ram

Abstract: 2114 Ram pinout 18 2114 static ram ic 2114 4k x 4 2114 LC RAM 2114 LC 2114 ram 2114 RAM ic 2114 "static RAM" ic 2114
Contextual Info: SANYO SEMICONDUCTOR CORP 7b 7997076 d Ë J 7 ^ 7 07b OGOlTEM SANYO SEM ICO NDUCTOR CORP LC 351 4 f3514L 76C 0 1 9 2 4 c-m os l s i 1024 WORDS X A BITS HIGH-SPEED CMOS STATIC RAM 3 f~ 07 CIRCUIT D R A W IN G NO.40D2 3007A General Description The LC3514/LC3514L are nonclocked CMOS static RAM's organized as 1024 words x 4 bits They are

Contextual Info: Memory Lineup LC321664AJ,AM LC321664AT LC321664BJ,BM,BT LC321667BJ.BM.BT * LC322270J.M LC322271 J.M LC382161T LC3564S,SS,SM LC3564RM,RMF LV - LC36128ML LC35256A.AS.AM LC35256AM(LV) LC33832P.S.M - LC36256AL, AML LC36256ALL, AMLL

ra2t

Abstract: a0191 SOP28 Package
Contextual Info: Ordering number: EN 4484B CMOS LSI No. 4484B i SAHYO LC3564RM.RT-1 OLV/12LV/15LV 64K 8192 words x 8 bits SRAM • Common-pin input/outputs, 3-state output Overview The LC3564RM,RT are 8192-word x 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They oper­

Contextual Info: Ordering number : EN 4794A CMOS LSI LC3564S, SM, SS-70/85/10 SAiYO i 64K 8192 words x 8 bits SRAM Overview Package Dimensions The LC3564S, LC3564SM , and LC3564SS are asynchronous silicon gate C M O S static RA M s w ith an 8192-word X 8-bit organization. These

Contextual Info: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,

Contextual Info: SANYO SEMICONDUCTOR CORP b3E D LC3564Q, QM, QS N0.3924A SA\YO i ITSAJ 7 tì lì7G7b QD12337 S7Ö CMOS LSI 64 Kbit 8192 x 8 CMOS Static RAM PINOUT OVERVIEW LC3564Q series devices are silicon-gate, CMOS static RAMs configured as 8192 x S bits. They incorporate an

dip28-300

Abstract: bt 450 DIP28- 600
Contextual Info: Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K 8192-word x 8-bit SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a

DIP28

Abstract: LC35256D-10 LC35256DM LC35256DT dt70 Dt10 3221-TSOP28
Contextual Info: Ordering number : EN5823 CMOS IC LC35256D-10, LC35256DM, DT-70/10 Dual Control Pins: OE and CE 256K 32768-word x 8-bit SRAM Overview Package Dimensions The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS

a13514

Abstract: 66353 LC3564CM LC3564CT DUTY100 3ce26 3187B ce1h sanyo
Contextual Info: 注文コードNo.N 6 6 3 5 A No. N 6 6 3 5 A 82201 新 開発ニューズ No.※N6635 とさしかえてください。 LC3564CM, CT-55U/70U CMOS LSI コントロール端子：OE, CE1, CE2 64K 8192ワードx8ビット SRAM LC3564CM, CT-55U/70Uは8192ワード×8ビット構成の非同期型シリコンゲートCMOS SRAMである。6Tr構