C256 Search Results

74x175

Contextual Info: M/C2563A C2563A Dual Slot PCMCIA/CardBus Power Controller •v? Preliminary Information General Description Applications The C2563A Dual Slot PCMCIA Personal Computer Memory Card International Association and CardBus Power Controller handles all PC Card slot power supply pins, both

FM24C256

Abstract: M08A C256
Contextual Info: C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They

400B

Abstract: HYB18TC256160AF
Contextual Info: February 2007 HYB18T C25616 0 AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.1 Internet Data Sheet C256160AF 256-Mbit Double-Data-Rate-Two SDRAM C256160AF Revision History: 2007-02, Rev. 1.1

HYB18TC256160AF

Abstract: 400B
Contextual Info: April 2007 HYB18T C25616 0 AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Internet Data Sheet C256160AF 256-Mbit Double-Data-Rate-Two SDRAM C256160AF Revision History: 2007-04, Rev. 1.20

a2c118

Abstract: mitac C556 C536 ES1869F l504 1C103 C5571 C558 C557
Contextual Info: 1 2 3 4 5 6 7 8 1 +12V + C5 100U/16V CPWX6.6 C256 0.1U 0603B 5VTAP OUT ERRGND 8 2 7 3 IN SENSE F/B SHUTDN +3V C97 0.1U 0603B R143 0603B_DFS 0 ON 1 OFF LP2951_SO 1 GND R521 7,15,19 11 AEN AUXAR MIC CMR REF FOUTR CINR FOUTL CINL LINEL AEN LINER 2 2 R545 10K

fm24c256 dip

Abstract: C256 FM24C256 FM24C256L M08A
Contextual Info: August 1999 SEM ICONDUCTOR TM General Description Features The FM 24C 256/C 256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirem ents in the Extended l2C 2-wire protocol.

Contextual Info: IVDtIC MX23C4096 4M-BIT C256K x 1 B CMOS MASK ROM FEATURES • Operating current: 60mA • Standby current: 100|j.A • Package - 40 pin DIP 600 mil) - 44 pin PLC C 256Kx16 organization(JEDEC pin out) Single +5V power supply Fast access time: 100/120/150/200ns

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

HYB18TC256160BF

Contextual Info: February 2007 HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet C256160BF 256-Mbit Double-Data-Rate-Two SDRAM C256160BF Revision History: 2007-02, Rev. 1.21

DTA114YS3

Abstract: DTC114YS3 marking 6D C256S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C256S3 Issued Date : 2003.07.30 Revised Date : 2003.11.28 Page No. : 1/4 PNP Digital Transistors Built-in Resistors DTA114YS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

Contextual Info: August 1999 C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They

HYB18TC256160BF-3S

Abstract: VM 256MB DDR400 HYB18TC256800BF 800E DDR400
Contextual Info: May 2007 HYB18T C25680 0 BF HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Internet Data Sheet C256[80/16]0BF 256-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.3, 2007-05

18-PIN

Abstract: MSM51C256A 1772B
Contextual Info: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the C256A is OKI's COMS silicon gate process technology.

Contextual Info: s e m ic o n d u c t o r August 1999 C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the

C2560

Abstract: vectron tcxo 16,384 Vectron TCXO 68 MHz D807 D206 D287 GR-1244-CORE TC-210 B287 f807 SMD
Contextual Info: C2560 TCXO Typical Applications Features SONET/SDH Synthesizers Optimized for Semtech SONET / SDH Synchronization Sets Stratum 3 Compliant Tight Stability Low Aging Previous Vectron Model Numbers MC1200; TC-210 Frequency Range 10 MHz – 200 MHz Standard Frequencies

C2564

Abstract: CoEv
Contextual Info: C2564 Product Description REV A ADSL/ISDN Line Isolation Transformer Designed To Meet Requirements Of IEC60950 For Supplementary Insulation, 250V EIA date code and lot code COEV C2564 XXXXX Customer terminal #1 indicator CoEv terminal #5 0.700 MAX [17.78 MAX]

VMP4

Abstract: db3 c322 db3 c314 b30 c250 db3 c235 db3 c248 b30 c250 a2 db3 c244 b30 c300 - 1 FPS009-2405-0
Contextual Info: 8 D 7 6 5 4 2 1 D TP10 12V TO 14V DC INPUT R248 0R100 3V3 I limit = 0.1V / R . about 2.9A CR1 1V8 F1 STPS340U 3 J1 MP179_2.1mm 1 2 3 2A C256 2.2µF R257 0R100 TP11 + C18 470uF 25V TP17 U4 5 3V3 V+ 1 8 2 7 3 6 4 5 L3 22uH 3.8A + C22 220uF 16V 3 SHDN 2 3/5

D206

Abstract: vectron tcxo 16,384 gr 801 C2560 MC1200 Vectron TCXO 68 MHz 12.8 tcxo B287 D287 D807
Contextual Info: TCXO C2560 Typical Applications Features SONET/SDH Synthesizers Optimized for Semtech SONET / SDH Synchronization Sets Stratum 3 Compliant Tight Stability Low Aging Previous Vectron Model Numbers MC1200; TC-210 Frequency Range 10 MHz – 200 MHz Standard Frequencies

DDR200

Abstract: DDR266 DDR333 HYB25DC256163CE-4 HYB25DC256163CE-5 HYB25DC256163CE-6
Contextual Info: January 2007 HYB25D C25616 3 CE- 4 HYB25D C25616 3 CE- 5 HYB25D C25616 3 CE- 6 2 5 6 - M b i t D o u b l e - D a t a - R a t e SG R A M Green Product Internet Data Sheet Rev. 1.1 Internet Data Sheet C256163CE 256-Mbit Double-Data-Rate SGRAM C256163CE-4, C256163CE-5, C256163CE-6

DTC114YN3

Abstract: C256N DTA114YN3 marking 6D
Contextual Info: CYStech Electronics Corp. Spec. No. : C256N3 Issued Date : 2003.11.28 Revised Date : Page No. : 1/4 PNP Digital Transistors Built-in Resistors DTA114YN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

Contextual Info: November 2007 HYB18T C25680 0 AF HYB18T C25616 0 AF C256800AF C256160AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Date: 2007-11-23 Internet Data Sheet HY[B/I]C256[80/16]0AF 256-Mbit Double-Data-Rate-Two SDRAM

HYB18TC256800BF

Contextual Info: February 2008 HYB18T C25680 0 BF HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.6 Internet Data Sheet C256[80/16]0BF 256-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.6, 2008-02

P030X

Abstract: transistor c128 STV8105 C128 C129 C256
Contextual Info: Ver B MODULE NO.: MI25664AO Item A B C129 C256 Column 128 Date 20050804 20050829 Remark Original Drawing Revise Pin Name 0.30 0.28 C128 ( Column 129 ) ( Column 1 ) C1 ( Column 256 ) R64 R63 ( Row 64 ) ( Row 63 ) R1 0.28 0.30 R2 ( Row 2 ) ( Row 1 ) 88.00±0.30 (Panel Size)

550IA

Contextual Info: Z ' ? ? fft S U * 0 .0 6 ± 0.06 * 0 .0 6 7.27X66*83.82- 1.27—1 « 0 .0 8 6 .4 4 .4 * 0 .0 8 .i 1.27X7=8.09-1 GROUND SIGNAL •d-tf TOTAL h C C O N TA C T e e L O C A T IO N ) > (COLUMN) CALL ODD NO. COLUMN (7-67) (ALL EVEN NO. COLUMN (2~66) ) C2-56)