C256L Search Results

FM24C256

Abstract: M08A C256
Contextual Info: FM24C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They

fm24c256 dip

Abstract: C256 FM24C256 FM24C256L M08A
Contextual Info: August 1999 SEM ICONDUCTOR TM General Description Features The FM 24C 256/C 256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirem ents in the Extended l2C 2-wire protocol.

Contextual Info: August 1999 FM24C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They

Contextual Info: s e m ic o n d u c t o r August 1999 FM24C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the

27HC256-70

Abstract: 27HC256-90 32-PIN
Contextual Info: CA TA LYST SEM ICO N D UCTOR 12E D | IT b E b T S IIIIIIIIIIIIIIII E 2 . A T # U U à r E 5 T llilllllllllllll s e m i c o n d u c t o r , in c . 0QQGS7Ô 4 | C256LM [LOW POWER MILITARY] C256LM - Low Power Military Temperature 32,768 x 8-B IT H IG H -S P E E D C M O S E P R O M

51C256L

Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
Contextual Info: [P iF S iiU B lO tM Ä ß W in te T C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)

Contextual Info: in té T C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM C256L-12 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 nA (max.) - Refresh period, RAS-Only — 32 ms (max.) - Data Retention Current — 230 ¡¡A

AS7C256

Abstract: AS7C256L
Contextual Info: II II High Performance 32Kx8 CMOS SRAM AS7C256 C256L 32Kx8 CMOS SRAM Common I/O \ F E A T U R E S _ • Organization: 32,768 words x 8 bits • Completely static memory. No clocks or timing strobe required. •

Contextual Info: C256L Military 32K x 8 CMOS EPROM KEY FEATURES High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time — Latch-Up Immunity to 200 mA • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP

intel eprom Intelligent algorithm

Contextual Info: IIIIICRTRLYST matti S E M I C O N D U C T O R C256L/C256LI 256K-Bit HIGH SPEED CMOS EPROM FEATURES • Fast Read Access Times: -55/70/90/120ns Commercial -70/90/120ns (Industrial) CMOS and TTL Compatible I/O 12.5V Programming Level JEDEC Standard Pinouts:

71c256l

Abstract: cat71c256l CAT71C256L/71C256LI
Contextual Info: C256L/C256LI C256L/C256LI - Low Power 32K x 8-BIT CMOS STATIC RAM DESCRIPTION FEATURES The C256L/C256LI is a low power, high performance 262.144 bit CMOS static RAM or­ ganized as a 32.768 X 3 bit array. It features 5V single power supply operation and direct TTL