C20000 Search Results

MX29LV128D

Abstract: MX29LV128DTTC MX29LV128DBT2C-90Q MX29LV128DBT2C 0110001 227A capacitor mx29lv128db MX29LV128DBT Q0-Q15 510000-51FFFF
Contextual Info: MX29LV128D T/B 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 16,777,216 x 8 / 8,388,608 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 255 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

fl128p

Abstract: S25FL128P S25FL128S fl128 s25fl128 C1FFF 27FFF WSON S25FL-P WNF008
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes S25FL128P. This is the factory-recommended migration path. Please refer to

Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P S29NS256P S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet (Advance Information) S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

SA196-SA199

Abstract: S29GL256N SA1461
Contextual Info: Am29LV128MH/L Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29GL256N supersedes Am29LV128MH/L and is the factory-recommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this

ba139

Abstract: BA204 TSOPI56-P-1420-0 BA182 diode BA148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TC58FVM7T2
Contextual Info: TC58FVM7 T/B 2AFT (65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for

Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For

Contextual Info: S72WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE Distinctive Characteristics

SA9801

Abstract: 8A0000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE0.4E FLASH MEMORY CMOS 128 M 16M x 8/8M × 16 BIT MirrorFlashTM MBM29PL12LM 10/12 n DESCRIPTION The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits. The MBM29PL12LM is offered in 56-pin TSOP(I). The device is designed to be programmed in-system

4017BP

Abstract: 4013BP 4069BP 4016BP 4066bp hef 4011bp IC NAND 4040BP 4000BP 40106BP 4030BP
Contextual Info: Signetics Integrated Circuits - Loemos HEF 4000 Series LOCIMOS Locally Oxidised CMOS LOCM OS g e n e r a l d e s c r ip t io n LOCMOS is com ple tely pin, fu n c tio n and ty p e num ber com patible w ith th e 4 0 0 0 and 14000 fam ilies. Compared w ith o rd in a ry CMOS, LOCMOS c irc u it

EN25Q128

Contextual Info: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation

M30LW128D

Abstract: M58LW064D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■

Contextual Info: EN29GL256H/L EN29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Write operation status bits indicate program and erase operation completion • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

PMC5384

Abstract: DM9161 pcb dm9161 SM73248 FRC 40 PIN Male connector digital ampare meter diagram RJ-45 poe ethernet smart sm73228 34 PIN FRC female CONNECTOR FRC 14 PIN Male connector
Contextual Info: MPC8272ADSUG 3/2004 Rev. 0.1 MPC8272ADS User Guide Home Page: www.freescale.com email: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 800 521-6274

transistor c1827

Abstract: transistor C3202 transistor C1096 c5302 C3202 c1093 c5902 c5902 transistor c5250 transistor transistor c1093
Contextual Info: Freescale XGATE Compiler Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corp. in the US. CodeWarrior is a trademark or registered trademark of Metrowerks Corp. in the US and/or other countries. All other tradenames and trademarks are the property of their respective owners.

29gl128

Abstract: 29GL256 MX29GA257EHXCI-90Q mx29ga256 MX29GA MX29GA129E b6000 mx29ga128 sa229
Contextual Info: MX29GA256/257E H/L MX29GA128/129E H/L MX29GA - E Series DATASHEET P/N:PM1484 REV. 0.04, JUL. 30, 2009 1 PRELIMINARY MX29GA256/257E H/L MX29GA128/129E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

MX29GA129E

Abstract: MX29GA257E MX29GA MX29GA257 Q0-Q15 SA10
Contextual Info: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 1.0, NOV. 27, 2009 1 MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

TC58FVM7T2ATG65

Abstract: TC58FVM7B2ATG65 BA167 BA169 ef80 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 BA261
Contextual Info: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS / 8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features

NS512

Abstract: S29NS128P wireless design guide 13th S29NS256P S29NS512P S29NS-P 1A400 VDD064-64-Ball
Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: TR-Series Specifications 9.73D x 6.73H mm PDI TR-Series is a resistance-welded hermetically sealed quartz crystal in a TO5 through-hole package. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with

STM300

Abstract: AN288 CS4953x4/CS4970x4 Firmware User’s Manual
Contextual Info: CS4953x4/CS4970x4 32-bit Audio DSP Family CS4953x4/CS4970x4 System Designer’s Guide Preliminary Product Information This document contains information for a new product. Cirrus Logic reserves the right to modify this product without notice. Copyright 2013 Cirrus Logic, Inc.

Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

Contextual Info: DM8606BF 6-Port Fast Ethernet Single Chip Switch Controller DAVICOM Semiconductor, Inc. DM8606BF 6-Port Fast Ethernet Single Chip Switch Controller DATA SHEET Preliminary Version: DM8606BF-DS-P01 Dec. 07, 2005 Preliminary Version: DM8606BF-DS-P01 Dec, 07, 2005

MX29LV128MB

Abstract: 29LV128M MX29LV128MBTI-90Q 590000-597FFF
Contextual Info: MX29LV128M T/B 128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 16,777,216 x 8 / 8,388,608 x 16 switchable • Sector structure

MX29LV128D

Abstract: SA152 equivalent MX29LV128DBT2I-90Q
Contextual Info: ADVANCED INFORMATION MX29LV128D T/B 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 16,777,216 x 8 / 8,388,608 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 255 • Extra 128-word sector for security