C1V MARKING Search Results

SDV711Q

Contextual Info: SDV711Q Semiconductor Variable Capacitance Diode Features • • • • Suitable for UHF / VHF band VCO. High Capacitance Ratio : C1V/C4V=2.0 Typ. Low series resistance : rs=0.3Ω(Typ.) Useful for Small Size Tuner. Ordering Information Type No. Marking

Contextual Info: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0 Typ. Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC

JDV2S14E

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

C100P

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES E B L ・High Capacitance Ratio : C1V/C5V=5.0 Min. L ・Variations of Capacitance Values is Little. D ・Excellent C-V Characteristics.

KDV273UL

Contextual Info: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES ・High Capacitance Ratio : C1V/C4V =2.0 Typ. C ・Low Series Resistance : rs=0.39Ω(Typ.) A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC

vr 1K

Abstract: KDV273UL
Contextual Info: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0 Typ. Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC

Contextual Info: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs  High-volume commercial systems Features  High capacitance ratio: C1V/C4V = 5 typical  Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description

Contextual Info: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

JDV2S36E

Contextual Info: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

marking FB

Abstract: JDV2S02E
Contextual Info: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

JDV2S05E

Contextual Info: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 1.9 typ. • Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

SOT-23 EA1

Abstract: MARKING EA1 EB1 marking EA1 sot-23
Contextual Info: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C1V/C4V = 5 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description

date code body marking samsung

Abstract: marking code samsung SMD BAR63-02W BB659E6805 SC79 SCD80 smd DIODE code marking Q DIODE smd marking Ag diode smd marking "147"
Contextual Info: BB659E6805 Silicon Variable Capacitance Diode • C1V -capacitance selection for Samsung • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to

KDV355E

Contextual Info: SEMICONDUCTOR KDV355E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. ・Low Series Resistance : rs=0.6Ω Max. ・Small Package : ESC. E C 1 A ・High Capacitance Ratio : C1V/C4V =2.2(Min.) B CATHODE MARK FEATURES

Contextual Info: BB679. Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio C1V/C28V typ. 18.3
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB679-02V 2 Type

Contextual Info: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C1V/C4V = 5 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description

Contextual Info: JDV2S28SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S28SC VCO for UHF Band Radio Unit: mm High Capacitance Ratio : C1V/C3V = 2.17 typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. • Lead (Pb)-free.

marking code INFINEON

Abstract: A2003 marking code of 0 to Z BB867-02V
Contextual Info: BB867. Silicon Tuning Diode
For SAT - Indor units
High capacitance ratio C1V /C25V typ.15.8
Low series inductance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration

JDV2S25FS

Contextual Info: JDV2S25FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S25FS VCO for UHF Band Radio Unit: mm High capacitance ratio: C1V/C4V = 2.9 typ. • Low series resistance: rs = 0.49 Ω (typ.) • This device is suitable for use in small tuners. 0.6±0.05 0.1

1SV270

Abstract: 470MHZ
Contextual Info: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View

1SV331

Contextual Info: 1SV331 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV331 Useful for VCO/TCXO Unit: mm • Small Package • High Capacitance Ratio : C1V/C4V = 3.75 typ. • Low Series Resistance : rs = 0.45 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Unit: mm • Small Package · High Capacitance Ratio : C1V/C4V = 1.9 typ. · Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

marking FA

Abstract: JDV2S01E
Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

marking FB

Contextual Info: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.60 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics