JDV2S01E Search Results

Contextual Info: DATA SHEET SMV1275-079LF: Hyperabrupt Junction Tuning Varactor Applications • VHF TV tuners  VCOs Features  Cross to Toshiba JDV2S01E  Low-series resistance  High-capacitance ratio  Ultrasmall SC-79 package MSL1, 260 °C per JEDEC J-STD-020

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Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

JDV2S01E

Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics

JDV2S01E

Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

JDV2S01E

Abstract: marking FA
Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics

JDV2S01E

Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package · High Capacitance Ratio: C1V/C4V = 2.0 typ. · Low Series Resistance: rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

JDV2S01E

Contextual Info: JDV2S01E 東芝ダイオード シリコンエピタキシャルプレーナ形 JDV2S01E ○ UHF 帯無線 VCO 用 単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.5 Ω 標準 • : C1V/C4V = 2.0 (標準) 2 端子小型外囲器なので､VCO の小型化に適しています。

JDV2S01E

Contextual Info: 20010126 JDV2S01E SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V

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Abstract: JDV2S01E
Contextual Info: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

5GHz oscillator

Abstract: JDV2S01E TA4205FC 3GHz oscillator VCO
Contextual Info: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are incorporated in one package; therefore the TA4205FC can

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

marking code V6 33 surface mount diode

Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Contextual Info: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or