JDV2S14E Search Results

JDV2S14E

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

JDV2S14E

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO Unit: mm • Small Package · High Capacitance Ratio : C1V/C2.5V = 2.15 typ. · Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol

JDV2S14E

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO Unit: mm • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO Unit: mm • Small Package · High Capacitance Ratio : C1V/C2.5V = 2.15 typ. · Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol

JDV2S14E

Contextual Info: JDV2S14E 東芝ダイオード シリコンエピタキシャルプレーナ JDV2S14E ○ TCXO/VCO 用 単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.4 Ω 標準 • : C1V/C2.5V = 2.15 (標準) 2 端子小型外囲器なので､セットの小型化に適しています。

JDV2S14E

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO Unit: mm • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

JDV2S14E

Contextual Info: 20010508 JDV2S14E SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ∼ 2.5 V

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

tb31224cf

Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Contextual Info: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future