1SV270 Search Results

1SV270

Abstract: LS 1017
Contextual Info: 1SV270 SPICE PARAMETER 20010110 SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz VR = 1V ～ 4V REVERSE VOLTAGE RANGE: AMBIENT TEMPERATURE:

Contextual Info: 1SV270 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV270 VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package U n it in mm : C1V/C4V = 2.0 Typ. : rs = 0.280 (Typ.) M A X IM U M RATINGS (Ta = 25°C)

1SV270

Contextual Info: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)

1SV270

Abstract: 470MHZ
Contextual Info: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View

1SV270

Contextual Info: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 1SV270 TOSHIBA 1 SV270 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package SILICON EPITAXIAL PLANAR TYPE Unit in mm : C1V/C4V = 2.0 Typ. : rs = 0.28Ü (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SV270 TOSHIBA 1 SV270 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Small Package SILICON EPITAXIAL PLANAR TYPE U n i t in m m : C1V/C4V = 2.0 Typ. : rs = 0.280 (Typ.) M A X IM U M RATINGS (Ta = 25°C)

1SV270

Abstract: DIODE T6 marking
Contextual Info: 1SV270 SILICON EPITAXIAL PLANAR DIODE VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Small package • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T6 Applications • VCO for UHF band radio Absolute Maximum Ratings Ta = 25 OC

1SV270

Abstract: 470MHZ
Contextual Info: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View

1SV270

Contextual Info: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV270 Unit in mm VCO FOR UHF B A N D R A D IO • • • High Capacitance Ratio Low Series Resistance Small Package : C IV /C 4 V = 2.0 Typ. : rs = 0.281 1 (Typ.) I 0 L' I Li!) Il l jX -> M A X IM U M

1SV270

Contextual Info: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV270 VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Small Package U n it in mm : C1V/C4V = 2.0 Typ. : rs = 0.280 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Product specification 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0 Typ. Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

1SV270

Contextual Info: 1SV270 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package SILICON EPITAXIAL PLANAR TYPE 1 SV270 : CIV / C4V = 2.0 Typ. : rs = 0.28ü (Typ.) MAXIMUM RATINGS (Ta = 25°C)

LS 1017

Abstract: MARKING EE 1SV270 303E 27c diode toshiba
Contextual Info: 1SV270 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package SILICON EPITAXIAL PLANAR TYPE 1 SV270 : CIV / C4V = 2.0 Typ. : rs = 0.28ü (Typ.) MAXIMUM RATINGS (Ta = 25°C)

1SV270

Abstract: marking tf
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0 Typ. Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02

C2580

Abstract: 1SV270
Contextual Info: 1SV270 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV270 ○ UHF 無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.28 Ω (標準) • 外形が小さい。

Contextual Info: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 <;v?7n VCO FOR UHF BAND RADIO • High Capacitance Ratio : CIV / C4V = 2.0 Typ. • Low Series Resistance : rs = 0.28ü (Typ.) • Small Package MAXIMUM RATINGS (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction