C1685 TRANSISTOR Search Results

C1685 transistor

Abstract: transistor c1684 TRANSISTOR C1685 C1684 transistor C1685 R transistor an c1685 transistor transistor c1684 NPN C2079 optocoupler H11A1 C1682 transistor
Contextual Info: E ö TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS •The H11A1 is a phototransistor-type optically coupled isolator. An infrared èmitting diode manufactured from specially grown gallium arsenide is selectively coupled

Contextual Info: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled

C1685 transistor

Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
Contextual Info: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic

transistor c1684

Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
Contextual Info: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from

C1685

Abstract: C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683
Contextual Info: PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL 111 PACKAGE DIMENSIONS t r if I J_ max o w ® ^ . 8.89 8.38 J typ L ~ 1 r _ DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

C1685

Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Contextual Info: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 CNY17F-1 CNY17F-2 CNY17F-3 PACKAGE DIMENSIONS DESCRIPTION db Æ db The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES W W W 8.89 8 .3 8 High isolation voltage 5300 VAC RMS— 1 minute

C1679

Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
Contextual Info: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN

Contextual Info: DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT9001 PACKAGE DIMENSIONS D ESCRIPTIO N The MCT9001 is a tw o channel optocoupler in a standard, end stackable, 8 pin dual-in-line package, This part offers the same packing density as 4 pin optocouplers, while m inim izing co m ponent count and

CHY17

Abstract: CNY17-3 cny17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit cny17-2 ny17
Contextual Info: E O PHOTOTRANSISTOR OPTOCOUPLERS GPTOELECÏRDNICS II CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE db r& The CNY17 series consists of a Gallium Arsenide I RED coupled with an NPN phototransistor. rifa FEATUM S High isolation voltage 5300 VAC RMS— 1 m inute 7500 VAC PEAK— 1 m inute

C1684 r

Abstract: C1684R C1680 C1685 R transistor
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~

4N35 QUALITY TECHNOLOGIES

Abstract: 4n35 equivalent C1684 r .85 transistor
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86

Contextual Info: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN

Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

C1681

Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35

transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Contextual Info: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

GNY17-3

Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
Contextual Info: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI

transistor c1684

Abstract: C1685 transistor C1685 R transistor C1681 TIL111 TRANSISTOR C1685 C1684 transistor C1685 npn
Contextual Info: PHOTOTRANSISTOR OPTOISOLATOR OPTDELECIRDIIICS TIL111 DESCRIPTION PACKAGE DIMENSIONS db The TIL111 is a phototransistor-type optically coupled isolator. An infrared em itting dio d e m anufactured from specially grow n gallium arsenide is selectively coupled

CNY17 pulse circuit

Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
Contextual Info: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute

M0C8113

Abstract: OC8112 M0C8111 OC811 m0c8112
Contextual Info: E PHOTOTRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION db Æ Æ The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î “ « t I l 03 I V c p _ g ì 8.89 8.38 ~ -J _ 2.3;

C1684 r .85 transistor

Abstract: transistor c1684
Contextual Info: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.

4N25 APPLICATION NOTE

Abstract: 4N25 RFT 100k
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS ffc rft cii The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. WWW FEATURES & APPLICATION!

C1680

Abstract: C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683
Contextual Info: £ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS V y A ^ / V ' v ' V v 'v v ^ // MCT2 DESCRIPTION PACKAGE DIMENSIONS ” t o I $ T ~ J S FEATURES & APPLICATIONS I ® 8.89 _ 8.38 ~ The MCT2 is a NPN silicon planar phototransistor 1optically coupled to a gallium arsenide infrared emitting