BYTES Search Results

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

74LS74N

Abstract: 6502a M6502 UM6512C 4LS74 UM6502C um6502 M6507
Contextual Info: U IVS C UM 6502 0 7 12 8-bit Microprocessor Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Addressable memory range of up to 64K bytes "R ead y" input Direct memory access capability Bus compatible with MC6800 Choice of external or on-board clocks

PD4A

Contextual Info: _ bq3285 UIMITRODE- Real-Time Clock RTC Features >• Direct clock/calendar replace­ ment for IBM AT-compatible computers and other applications >- Functionally compatible with the DS1285 ~ Closely matches MC146818A pin configuration >• 114 bytes of general nonvolatile

Contextual Info: TOSHIBA TMP93CM40A TMP93CM41A TLCS-900 Seríes Low Voltage/Low Power 4 External memory expansion CMOS 16-bit Microcontrollers • Can be expanded up to 16M bytes (for both programs and data). TMP93CM40AF/TMP93CM41AF • A M 8/16 pin (select the external data bus width).

Contextual Info: SN75LVDS84A FLATLINK TRANSMITTER SLLS354C – MAY 1999 – REVISED NOVEMBER 1999 D D D D D D D D D D D D 21:3 Data Channel Compression at up to 196 Million Bytes per Second Throughput Suited for SVGA, XGA, or SXGA Data Transmission From Controller to Display

TC58NVG1S3ETA00

Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Contextual Info: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Part Marking STMicroelectronics TSSOP8

Abstract: M95256
Contextual Info: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 bytes) of EEPROM – Page size: 64 bytes

M68HC11 reference manual

Abstract: Motorola 52 pin PLCC EEPROM MCU MC68HC11E9 52 PIN PLCC MOTOROLA
Contextual Info: Order th is document by BR775/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC711E9 Technical Summary 8-Bit Microcontroller Introduction The MC68HC711E9 high-performance microcontroller MCU is an electrically programmable ROM (EPROM)-based version of the MC68HC11E9 and includes similar features — 12K bytes of

w1p84

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM82 2009 TOSHIBA CORPORATION All Rights Reserved TMP89FM82 Considerations for using Motor Control Circuit PMD:Programmable Motor Driver Following considerations are necessary for writing data to electrical lead angle timer (ELDEG) and reading 2 bytes

CHL8318-20

Abstract: chl8318 phase controller trigger
Contextual Info: Digital Multi-Phase Buck Controller DESCRIPTION • Compatible with IR ATL Drivers and tri-state Drivers  9 bytes of NVM storage available for customer use  +3.3V supply voltage; 0ºC to 85ºC Ambient operation  RoHS Compliant, MSL level 1 package

66C367PE

Contextual Info: SLE 66C367PE 8/16-Bit Security Controller with enhanced instruction set for large memories in 0.22 µm CMOS Technology 196-bytes ROM,4352 bytes RAM, 36-bytes EEPROM Dual Key Triple DES Sho rt Pro duc t O ve r vi e w May 2011 Chi p C ard & Sec u ri t y SLE 66C367PE

CAT5221WT

Contextual Info: CAT5221 Dual Digitally Programmable Potentiometer DPP with 64 Taps and I2C Interface http://onsemi.com Description The CAT5221 is two Digitally Programmable Potentiometers (DPPs) integrated with control logic and 16 bytes of NVRAM memory. Each DPP consists of a series of 63 resistive elements

M95M01-D

Abstract: M95M01-DF marking M95 m01d
Contextual Info: M95M01-DF M95M01-R 1-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mb (128 bytes) of EEPROM – Page size: 256 bytes SO8 (MN) 150 mil width ■ Write

SOX28

Abstract: KDS Crystals DOC KDS Crystals through hole
Contextual Info: M41ST87Y M41ST87W 5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM Features Embedded crystal • 5.0, 3.3, or 3.0 V operation ■ 400 kHz I2C bus ■ NVRAM supervisor to non-volatize external

m955

Abstract: M9551 M95512-DF
Contextual Info: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 bytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

AT45DB081D

Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
Contextual Info: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency • • • • • • • • • • • • • • – SPI Compatible Modes 0 and 3 User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page

c4460

Abstract: TMSC44 TMS320C40GFL Texas Instruments processor selection guide 1994 120M 336M LD31 TMS320C44 TMS320C44-50 TMS320C44-60
Contextual Info: TMS320C44 DIGITAL SIGNAL PROCESSOR SPRS031C − AUGUST 1994 − REVISED MARCH 2004 D Highest Performance Floating-Point Digital D D D D D D D D D Signal Processor DSP − TMS320C44-60: 33-ns Instruction Cycle Time, 330 MOPS, 60 MFLOPS, 30 MIPS, 336M Bytes/s

BSC 68H

Abstract: SCK 055 TSOP 28 SPI memory Package flash AT45DB161 AT45DB161B AT45DB161-CC AT45DB161-RC PA10 PA11 AT45DB161-TC
Contextual Info: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB161 Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory

X76F200

Contextual Info: ISO 7816 Compatible X76F200 2K 256 x 8 bit Secure SerialFlash FEATURES DESCRIPTION • 64-bit Password Security • One Array 240 Bytes Two Passwords (16 Bytes) —Read Password —Write Password • Programmable Passwords • Retry Counter Register —Allows 8 tries before clearing of the array

80C51

Abstract: 80C52 PDIL40 PLCC44 TS80C51U2 TS83C51U2 TS87C51U2 VQFP44 16kx8 ram
Contextual Info: TS80C51U2 TS83C51U2 TS87C51U2 Double UART 8-bit CMOS Microcontroller 1. Description TS80C51U2 is high performance CMOS ROM, OTP and EPROM versions of the 80C51 CMOS single chip 8-bit microcontroller. The TS80C51U2 retains all features of the 80C51 with extended ROM/EPROM capacity 16 bytes , 256 bytes