BY706 Search Results

BY705

Abstract: BY706
Contextual Info: 5bE PHILIPS D 7110flEb 0G4O5O5 SDT « P H I N I N T ERNATIONAL BY705 BY706 SbE ]> OJ SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes should be

Contextual Info: N AUER PHILIPS/DISCRETE b'JE D bb53R31 OQSbSlfi DOT APX B Y /U t BY706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, the diodes should be

BY706

Abstract: eht rectifier by705
Contextual Info: b3E » • bb S3 T E 4 0Ü 7M 32 5 TIT W Ê S I C 3 _ N A P C / P H I L I P S S E M I C O N » BY705 BY706 _ FOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBO OK SC01 OR DATASH EE T SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended fo r use in general purpose high-voltage applications.

BY705

Abstract: BY706
Contextual Info: N AUER PHIL IPS/DISCR ETE b^E D • bbSB^Bl GG2bSlfl DOT H A P X A BY /Ut BY706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended fo r use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, the diodes should be

BY705

Abstract: BY706 sod61 brown
Contextual Info: I I N AKER PHILIPS/DISCRETE b=JE D bbSBTBl OGHbSlfl GOT A IAPX B Y /U 5 B Y706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EH T re c tifie r diodes in glass envelopes Intended fo r use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, th e diodes should be

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BY359-1500

Abstract: BYX4 9000V BYW96D
Contextual Info: 32 Power Devices Double Diffused Rectifiers in o rd e r o f cu rre n t rating (cont.) Type No. Package Outline Average Forward Current Repetitive Peak Reverse Voltage Surge (NonRepetitive) Forward Current Reverse Recovery Time •f (AV) m ax.Cl ^RRNI max.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published