BY239 1500 Search Results

BY239 1500 Result Highlights (5)

Part	Manufacturer	Description	Download
ST1500GXH35A	Toshiba Electronic Devices & Storage Corporation	IEGT, 4500 V, 1500 A, 2-120B1S	Datasheet
54242-111500950LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 50 Positions, 2.54mm (0.100in) Pitch.	PDF
10118650-415004LF	Amphenol Communications Solutions	BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angle Header, Through Hole, Single row , Polarized, 15 Positions, 2.54mm (0.100in) Pitch.	PDF
10118615-215001LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header ,Through Hole ,Single row , 15 Positions ,2.54mm (0.100in) Pitch.	PDF
54112-807161500LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 16 Positions, 2.54mm (0.100in) Pitch.	PDF

BY239 1500 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10C1 Abstract: 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn Contextual Info: • f *< UK DISCRETE SEMICONDUCTORS M m S^ EETT LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS Preliminary «pacification Philip» Semiconductora	OCR Scan	LLE18300X DD3f033 10C1 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn	PDF
philips ferrite material specifications 12nc Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency	OCR Scan	LLE18150X 7110fi5b philips ferrite material specifications 12nc Class E amplifier BDT91 BY239 LLE18150X Tekelec diode	PDF
KH5395 Abstract: KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14 Contextual Info: KHEL KHEL Home About Us Products Wafer Fab QA & QC Other Activities Contact RECTIFIER DIODES AXIAL MOULDED RECTIFIERS Type No 1 AMPERE KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B 1.5 AMPERE KH5391 KH5392 KH5393 KH5395 KH5397 KH5398 KH5399	Original	KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B KH5391 KH5395 KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14	PDF
Transistor Equivalent list Abstract: J3 transistor by239 1500 100A101kp diode J3 Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB	OCR Scan	LFE15600X Transistor Equivalent list J3 transistor by239 1500 100A101kp diode J3	PDF
j78 transistor Abstract: j78 transistor equivalent Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very	OCR Scan	LLE15180X j78 transistor j78 transistor equivalent	PDF
diode BY239 Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55 Contextual Info: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency	OCR Scan	LLE16045X diode BY239 bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55	PDF
erie 1500 z Abstract: BDT91 BY239 LFE15600X SC15 by239 1500 Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides	OCR Scan	LFE15600X erie 1500 z BDT91 BY239 LFE15600X SC15 by239 1500	PDF
by239 Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB	OCR Scan	LLE16350X by239	PDF
Transistor AND DIODE Equivalent list Abstract: 100A101kp Contextual Info: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency	OCR Scan	LLE15370X MBD764 Transistor AND DIODE Equivalent list 100A101kp	PDF
B0239 Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor Contextual Info: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.	OCR Scan	LX1214E500X 100A1201kp B0239 Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor	PDF
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239	PDF
m 32 ab transistor Abstract: mlc444 bd239 equivalent Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter	OCR Scan	LXE15450X m 32 ab transistor mlc444 bd239 equivalent	PDF
Contextual Info: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n	OCR Scan	LLE16350X bbS3T31 003301b 33Q2M	PDF
Contextual Info: * f *< UK DISCRETE SEMICONDUCTORS LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS QD33025 Preliminary specification Philips Sem iconductors	OCR Scan	LLE18300X QD33025 FO-229 bb53T31 DD33033	PDF

epsilam 10 Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16	PDF
epsilam 10 Abstract: BDT91 BY239 LFE15600X Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X	PDF
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of December 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor LLE18010X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors	OCR Scan	OT437A 125002/00/02/pp12	PDF
philips ferrite 4330-030 Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips	PDF
BDT91 Abstract: BY239 LLE15370X Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE15370X SCA53 127147/00/02/pp12 BDT91 BY239 LLE15370X	PDF
LLE16350X Abstract: BDT91 BY239 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239	PDF
LX1214E500X Abstract: BD239 BY239 SC15 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor	Original	LX1214E500X SCA53 127147/00/02/pp12 LX1214E500X BD239 BY239 SC15	PDF
equivalent of SL 100 NPN Transistor Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA	Original	M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR	PDF
philips ferrite material specifications Abstract: BD239 BY239 LXE15450X SC15 mlc444 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor	Original	LXE15450X SCA53 127147/00/02/pp12 philips ferrite material specifications BD239 BY239 LXE15450X SC15 mlc444	PDF
diode BY239 Abstract: BD239 BY239 LLE16045X Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X	PDF

BY239 1500 Search Results

BY239 1500 Result Highlights (5)

BY239 1500 Datasheets Context Search

10C1

philips ferrite material specifications 12nc

KH5395

Transistor Equivalent list

j78 transistor

diode BY239

erie 1500 z

by239

Transistor AND DIODE Equivalent list

B0239

epsilam 10

m 32 ab transistor

epsilam 10

epsilam 10

philips ferrite 4330-030

BDT91

LLE16350X

LX1214E500X

equivalent of SL 100 NPN Transistor

philips ferrite material specifications

diode BY239