BVD 94 Search Results

VQ1000

Contextual Info: V Q 10 00 O i S u p e r t e ffic . x N-Channe! Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices Order Number / Package BVd ss/ R DS ON BV tcs (max) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5 .5 ÌÌ 0.5A VQ1000N6

transistor C624

Abstract: T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

FE252

Abstract: 2N2886 FZJ 131 fzj 165 TIX882 2N2180 2N5425 2SC111 2SC114 transistor BF140
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

IXTH26N50

Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Contextual Info: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450

Contextual Info: International US Rectifier Provisional Data Sheet No. FD 9.1273A IRHY7230CM IRHY8230CM HEXFET TRANSISTOR N-CHANNEL JAN5R2N7381 JANSH2N7381 R E F : M IL - S - 1 9 5 0 0 / 6 1 4 M EGA RAD HARD 200Volt, 0.4QQ, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs

Contextual Info: TOR IRFE Series Devices IRFE Series Data Sheet The IRFE Data Sheet describes 19 devices, 12 N-Channel and 7 P-Channel, all contained in the LCC package. This data sheet is arranged to show common tabular and graphical information between devices. alphabetical order. W here the information is device

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

40N25

Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Contextual Info: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 20 0 V olt V DS * R DS on = 32i2 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS -200 V Continuous Drain Current at Tamb=25°C b -110

Contextual Info: TOSHIBA 2SK3444 TOSHIBA Field Effect Transistor te n ta tiv e ] Silicon N Channel MOS Type ti-M OSV 2S K3444 High Speed, High Current Switching Applications Switching Regulator, DC-DC Converter Applications Industrial Applications Unit in mm Motor Drive Applications

Contextual Info: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

L1110

Abstract: GPIO Interface card LQFP-144 SA1100 SA-1110 Si9712 PNOE NPCE LinkUp Systems Corporation
Contextual Info: TM L1110 PC Card/Compact Flash Interface to StrongARM SA-1100 and SA-1110 CPUs FEATURES ƒSingle Slot PC Card/Compact Flash interface software configurable ƒGlue-less interface to SA-1100 / 1110 ƒSupport of both 3V and 5V cards ƒSingle PC Card interface

82551ER

Abstract: 82551IT 82551QM GD82551QM ICL Logic 82559 applications notes
Contextual Info: 82551QM Fast Ethernet Multifunction PCI/CardBus Controller Networking Silicon - 82551QM Datasheet Product Features • ■ ■ ■ Enhanced IP Protocol Support — TCP, UDP, IPv4 Checksum Offload — Received Checksum Verification Quality of Service QoS

Contextual Info: ADVANCED INTERCONNECTIONS Single In-line Solid Socket Strips Tel. 4 0 1-82 3 -5 2 00 o 5 Energy Way, P.O. Box 1019, W est W arw ick, Rl 02893 • FAX 401 -823-8723 Single In-Line Solid Socket Strips Socket Strip -01 Terminal Shown •1QQTYP. A = Pilch .100" 2.54m m x num ber of terminals.

Contextual Info: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

R4000SC

Abstract: 82C206 chipset 82c206
Contextual Info: Support Components Mentor ARC, Inc. WINset-VL R4x00 WINset-PCI R4x00 Mentor ARC Standard Features ❏ Wide range CPU support R4000SC/ PC, R4600 and R4400SC/PC ❏ VESA/PCI specification fullyCompatible ❏ High integration and high performance ❏ Separate VL/PCI and CPU bus to

Contextual Info: 82551QM Fast Ethernet Multifunction PCI/CardBus Controller Networking Silicon - 82551QM Datasheet Product Features • ■ ■ ■ Enhanced IP Protocol Support — TCP, UDP, IPv4 Checksum Offload — Received Checksum Verification Quality of Service QoS

r4200

Abstract: pc power sup R4000SC chipset 82c206 82C206 cache controller 64C22 R4X00 md127
Contextual Info: Support Components WINset-VL R4x00 WINset-PCI R4x00 Mentor ARC, Inc. Mentor ARC Standard Features ❏ Wide range CPU support R4000SC/ PC, R4600 and R4400SC/PC ❏ VESA/PCI specification fullyCompatible ❏ High integration and high performance ❏ Separate VL/PCI and CPU bus to

19n50

Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Contextual Info: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)

Contextual Info: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This