BUZ 308 Search Results

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

Contextual Info: SIEMENS BUZ 307 BUZ 308 SIPMOS Power Transistors • • N channel Enhancement mode Type ^DS R dS on Package 1> O rdering Code BUZ 307 800 V 3.0 A 3.0 n TO-218 AA C67078-A3100-A2 BUZ 308 800 V 2.6 A 4.0 LI TO-218 AA C67078-A3109-A2 Maxim um Ratings Param eter

buz80

Abstract: TR 308 OF
Contextual Info: SIEMENS BUZ 80 BU Z8 0A SIPMOS Power MOS Transistors BUZ 307 BU Z308 VDS = 800 V /q = 2.6 . 3.0 A ^DS on = 3.0 . 4.0 Q • N channel • Enhancement mode • Packages: TO-220AB TO-218AA (TOP-3) ') Type Ordering code BUZ 80 C67078-A1309-A2 BUZ 80 A C67078-A1309-A3

buz 350 equivalent

Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11

siemens igbt BSM 25GD 100D

Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11

Contextual Info: SIEMENS BUZ 308 SIPMOS Power Transistor f • N channel • Enhancement mode • Avalanche-rated Type BUZ 308 ^DS 800 V ^DS on 4 Í2 2.6 A Package Ordering Code TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

BUZ 308

Abstract: C67078-S3109-A2
Contextual Info: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol

C67078-S3109-A2

Abstract: 80J-10
Contextual Info: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ53A

Contextual Info: SIEMENS SIPMOS Power Transistor • • BUZ 53 A N channel Enhancement mode Type V'ns BUZ 53 A 1000 V 2.5 A ^DS on Package 11 Ordering Code 5.0 Q TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Continuous drain current Tc Symbol = 25 "C Values 2.5

BUP 312

Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186

Contextual Info: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs BUZ 40 B 500 V h 8.5 A flbSfon 0.8 a Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Continuous drain current Values

transistor buz 311

Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
Contextual Info: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current

spp77n05

Abstract: Q67040-S4001-A2 BUZ 32 SMD
Contextual Info: BUZ 100 S SPP77N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 S 55 V

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C

BUZ54

Abstract: s 271 5A BUZ357 BUZ84A BUZ,271 C67078-S1318-A2 BUZ54A C67078-S1010-A3 C67078-S1010-A2
Contextual Info: SIEM EN S SIPMOS" Leistungstransistoren SIPMOS Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Wds V n ¡o A ^D S on m ax Ptot W Bestellnummer Ordering code Gehäuse Package Bild Figure BUZ 78 800 8.0 1.5 40 C67078-S1318-A2

100S

Abstract: BUZ100S E3045 Q67040-S4001-A2 FS25
Contextual Info: BUZ 100S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 77 A • dv/dt rated • 175˚C operating temperature

W80S

Abstract: DIODE G14
Contextual Info: ÖÖD D • Û235b05 0014514 ? « S I E G 88D 14594 D ~ f BUZ 44 A - SIEMENS AKTIEN6ESELLSCHAF -Main ratings N-Channel = 500 V Draln-source voltage Voa =. 4,8 A Continuous drain current h Draln-source on-reslstance ^D S o n » 1,5 n Description

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

BUP 300

Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
Contextual Info: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8

BUZ332A

Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Contextual Info: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100

buz 342 G

Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2