BUX40 Search Results

15a transistor

Abstract: BUX40A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX40A DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 125V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for switching and linear applications in military

BUX40

Contextual Info: BUX40 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUX40 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUX40 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX40

Contextual Info: BUX40 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX40 is a silicon multiepitaxial planar NPN

BUX40

Abstract: BUX41
Contextual Info: NPN BUX40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS

BUX40S

Contextual Info: BUX40S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUX40S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX40

Contextual Info: rz 7 ^ 7 # SCS-THOMSON it m D ÏÏM K S B U X 40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX40 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military e

Contextual Info: BUX40S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX69

Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Contextual Info: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53

BUX40

Contextual Info: SavantIC Semiconductor Product Specification BUX40 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING see fig.2 PIN DESCRIPTION

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUX40 HIGH CURRENT NPN SILICON TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . . MOTOR CONTROL LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2

BUX40

Contextual Info: Inchange Semiconductor Product Specification BUX40 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING see fig.2 PIN DESCRIPTION

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

ESM750A

Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Contextual Info: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

BUX98PI

Abstract: ESM2012DV BUX98P ESM2030DV D45HS mj2955 TO-220 ESM2030 buw90
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE {V Vc-ao VcES VcEV V) 450 450 450 450 450 60 80 125 90 125 125 250 200 250 125 400 450 700 400 450 400 450 450 700 450 450 450 450 200 400 60 80 45 60 ao 1000 1000 1000 850 1000 120 160 250 160 250 160 300 250 300

NPN 350W

Abstract: TO276AB TO276AA BUX53 NTC1330-12.8MHZ 8MHZ BUX41N
Contextual Info: Search Results Part number search for devices beginning "BUW75" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUW75 NPN TO3 300V 12A 10 - 1.5/5 10MHz 120W