buv48 equivalent
Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
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buv48/dbuv48 equivalent2n3763 motorolabuv48+71n49342n37632n63392n6438buv48amm3735mr854
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buv48 equivalent
Abstract: BUV48-D BUV48 BUV48 Applications 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
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buv48/dbuv48buv48abuv48/buv48a+8buv48 equivalentbuv48-dbuv48 applications1n49342n37632n63392n6438mm3735
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buv48 equivalent
Abstract: BUV48 2N3763 MOTOROLA 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
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buv48/dbuv48buv48abuv48/buv48a+8buv48 equivalent2n3763 motorola1n49342n37632n63392n6438mm3735mr854
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mje13009 equivalent
Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
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buv48/buv48abuv48buv48atip73b+15tip74tip74atip74btip75tip75atip75bmje13009 equivalentbuv48 equivalenttransistor replacement table for transistorbuv47bd241a motorolabu108tip33c equivalenttip41c equivalentbd4202
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buv48 equivalent
Abstract: v48A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BU V48A SW ITCHMODE II Series NPN Silicon Pow er TVansistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS The BUV48/BUV48A transistors are designed for high-voltage, high-speed, power
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buv48 equivalent
Abstract: 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854
Contextual Info: ON Semiconductort BUV48 BUV48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated
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buv48buv48abuv48/buv48ar14525+8buv48/dbuv48 equivalent1n49342n37632n63392n6438mm3735mr854
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BUV48
Abstract: BUV48A buv48 equivalent BUV48 Applications
Contextual Info: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2
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buv48buv48abuv48 equivalentbuv48 applications |
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BUV48V
Abstract: by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE
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buv48buv48aot-93buv48v+8by205 diodeby205-400diode by205buv48 equivalentby205transistor d 1978diode by205 400transistor 2n2904
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buv48
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • Rugged Triple-Diffused Planar Construction • 15 A Continuous Collector Current • 1000 Volt Blocking Capability AUG UST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE
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buv48 equivalent
Abstract: BUV48 300V transistor npn 2a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48 DESCRIPTION •High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such
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buv48current-continuo100buv48 equivalent300v transistor npn 2a |
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BUV48 SE
Abstract: I v48a
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA B U V48 B UV48A S W IT C H M O D E II S e rie s NPN S ilic o n P o w e r T ra n s is to rs 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS The B U V 4 8 /B U V 4 8 A transisto rs are d e sig ned for h ig h -v o lta g e , h ig h -s p e e d , pow er
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BUV48 SE
Abstract: SGSD00036 kkz 10
Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous
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sgs30ma050d1250fisgs30msgs40ta045d+5sgs400t045do-24qbuv48 sesgsd00036kkz 10
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BUV48I
Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47
Contextual Info: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,
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bux47/v47/v47fibux47a/v47a/47afibux47/abuv47/a+14buv47fi/afio-218sowatt218bux47buv47buv48ibuv48af1buv48f1sgs v48abuv48fibux48a equivalentsgs v48a with circuit diagrambux48 equivalenti v48a
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kkz 10
Abstract: BUV48
Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous
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TIC106D equivalent
Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
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o-220ot-932m/tsp0711tic106d equivalent+9tic106m scrbd249 equivalenttip41c equivalentbt137 equivalentreplacement tyn412tic225m equivalentmalaysia tic226dtic226d equivalenttic126m equivalent
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buv48
Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtN*Tfcchootog* Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique
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15a3dinbuv48bc 171 npn transistortransistor buv+4transistor bc 237cbuv 76buv48itransistor buv 92
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D100E
Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Contextual Info: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same
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TIC106M SCR
Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
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o-220ot-932m/tsp0904tic106m scr+9tic106d equivalenttip41c equivalenttip42c equivalentbd242 transistor equivalenttransistor equivalent of bu406tip36c equivalentbtb06-600tic126d equivalenttic116d equivalent
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u810 diode
Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810
Contextual Info: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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mje2955tmje3055ttip73btip74+16tip74atip74btip75tip75atip75btip75c2n3055bu108an415amje2955t stbdx542n3055 audio amplifier application notebu326bu100mje13005bdv64
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2n56302n60302n56312n6031+102n5631 equivalent2n5630 "cross-referencechomericsbu1082sa1046tip122 tip127 audio ampbu326bu1002sd313 equivalentnpn/tip42c as regulator
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