BURNOUT RF POWER Search Results

Contextual Info: What EW LETT* miltm HPACKARD Schottky Barrier Diodes for Stripline, Microstrip Mixers and Detectors Technical Data Features • Small Size • Low Noise Figure 6 dB Typical at 9 GHz • Rugged Design • High Uniformity • High Burnout Rating 1 W RF Pulse Power Incident

MIL-STD-750 METHOD 2036

Abstract: 5082-2817 HSMS-28XX diode hp 5082-2817 hp2817
Contextual Info: Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2817/18 Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity Outline 15 0.41 .016 0.36 (.014) 25.4 (1.00) MIN. tension for 30 minutes). The

Contextual Info: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Zero Bias Detector Diodes (0.5 to 60GHz) * Features • ■ ■ ■ ■ ■ ■ High RF Pulsed Burnout High ESD Threshold Low “ M f ” Noise Excellent Temperature Stability, Better than Silicon Schottky ZBD’s

Contextual Info: Thn% H EW LETT» mL'EM PA CKARD Schottky Barrier D iodes for M ixers and D etectors Technical Data 5082 2817/18 - Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity O utline 15 0.41 .016

Hp5082

Abstract: hp 5082 2817 5082-2817
Contextual Info: fhp\ H E W LE T T mL'tim PA C K A R D Schottky Barrier Diodes for Mixers and Detectors Technical Data Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged D esign • High Uniformity • Both Medium and Low Barrier Diodes Available

ASW204

Contextual Info: Application Note Maximum Input Power Analysis of ASB’s MMIC Amplifiers Maximum Input Power Analysis of MMIC Amplifiers 1. Introduction In many applications, amplifiers may be subjected to an unexpected abnormal operation by a various RF environment so that the amplifier can’t work properly in a system. We made a test to provide a

MMIC limiter

Abstract: RF limiter PIN diode pin diode limiter tr limiter LML221 Mott diode
Contextual Info: 2-20 GHz MMIC Limiter Filtronic LML221 Solid State Features • • • • • • • • • • 0.5 dB Insertion Loss +15 dBm Leakage Power 4-6 Watts Burn-Out Power Typical -15 dB Input/Output Return Loss Typical 2-20GHz Frequency Bandwidth 40 nS Pulse Recovery Time

1N23 diode

Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

operation of basic limiter circuit

Abstract: burnout RF power
Contextual Info: Protection for Power Sensitive Microwave Components PIN diode limiters are designed to protect power sensitive microwave components against a variety of high pow er C W and pulsed microwave signals. Basic PIN limiters utilize diodes resulting in low insertion loss at low power levels. A s the power level increases, the incident

Contextual Info: Application Note Protection for Power Sensitive Microwave Components M509 PIN diode lim iters are designed to p rote ct p o w e r sensitive m icrow ave com ponents against a variety o f high p o w e r C W and pulsed m icrow ave signals. Basic PIN lim iters utilize diodes

1N23 diode

Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for

metal detectors circuit

Abstract: sdlva diode mixers Radar Warning Receiver
Contextual Info: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Diode Mixers and Detectors * Features • ■ ■ ■ ■ ■ ■ ■ PDB Diode Structures High R F Pulsed Burnout High E S D Threshold Low “ 1 / / ” Noise Low Noise Figure with Low LO Power Excellent Voltage Sensitivity

Contextual Info: Application Note 1677 Authors: Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric Thomson and Nick Vanvonno Single Event Effects Testing of the ISL70218SRH, Dual 36V Rad Hard Low Power Operation Amplifiers Introduction SEE Test Objective The intense heavy ion environment encountered in space

RA60H4047M1

Abstract: ra60h4047m1 application note RA60H4452M1 AN-UHF-078-A RA60H4047M ra60h4047
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-078-A Date : 26th Sep. 2006 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1

RA60H4047M1

Abstract: mitsubishi bipolar rf power RA60H4452M1 mitsubishi rf
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-078 Date : 26th Sep. 2006 Prepared : K. Mori Confirmed : S.Kametani SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 GENERAL: RA60H4452M1 and RA60H4047M1 use MOS FET device.

RA30H4047M1

Abstract: RA30H4047 RA30H4552M1 RA30
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-083-C Date : 17th Jul. 2007 Rev.date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1

RA30H4047M1

Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1

RA30H4047M1

Abstract: RA30H4552M1 RA30H4047M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-083-D Date : 17th Jul. 2007 Rev. Date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1

image rejection mixer

Abstract: MW front END radar front end X-band marine radar buffer 24V burnout RF power diagram radar circuit NJT1031 mixer X-band low noise
Contextual Info: NJT1031 X-Band Radar Front End NJT1031 is designed for the front end of marine radar system. It features a small size and a light weight operable at any frequency between 9.345GHz and 9.475GHz. This front end module consists of GaAs FET low noise amplifier, Image rejection mixer, Local VCO with

33330C

Abstract: tunnel diode application TUNNEL DIODE 20 GHz schottky diode agilent 8472b 423B rf detector diode low power rf detector diode "Point Contact Diode" 8472B
Contextual Info: Agilent 33330B/C Coaxial Detectors for OEM and Systems Use Product Overview General Information The Agilent Technologies 33330B/C series of broadband coaxial detectors are specifically designed for use in microwave instrumentation and systems applications such as the detecting element in leveling loops, power

radar front end

Abstract: diagram radar circuit radar block diagram diagram radar JRC "Front end module" radar pulse compression radar NJT1959 RADAR radar system with circuit diagram 9410
Contextual Info: NJT 1959 X-Band Radar Front End NJT1959 is designed for the front end of radar system. It features a small size and a light weight operable at any frequency between 9.345GHz and 9.475GHz This front end module consists of HEMT low noise amplifier. image rejection mixer. local VCO with buffer amplifier.

Contextual Info: 7744H Series Description The 7744H series is intended for secure mechanical attachment in stripline and m icrostrip assemblies, where RF and video intercon­ nections are soldered in place. The usable RF input power range is from "I5 5 through +20 dBm, above which the detector is in saturation with permanent degrada­

NJT1946A

Abstract: diagram radar circuit X-band marine radar radar system with circuit diagram diagram radar JRC radar front end front-end radar radar circuit NJT1946 pulse compression radar
Contextual Info: NJT1946A X-Band Radar Front End NJT1946A is designed for the front end of marine radar system. It features a small size and a lightweight operable at any frequency between 9.345GHz and 9.475GHz This front-end module consists of GaAs FET low noise amplifier, Image