423B Search Results

Detectors

Abstract: agilent 8472b 8473b 00423-60003 423B
Contextual Info: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • Excellent broadband flatness • Low broadband SWR • High burnout protection • Environmentally rugged • Field replaceable diode elements Agilent 423B Agilent 8470B

Contextual Info: 423BB1AB1 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0

Contextual Info: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • Excellent broadband flatness • Low broadband SWR • High burnout protection • Environmentally rugged • Field replaceable diode elements Agilent 423B I 50 µA/div

8470B

Abstract: agilent 8472b 8472B apc-7 connector 423B 08473-80002
Contextual Info: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • • • • • Agilent 423B Excellent broadband flatness Low broadband SWR High burnout protection Environmentally rugged Field replaceable diode elements I 50 µA/div

Contextual Info: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • Excellent broadband flatness • Low broadband SWR • High burnout protection • Environmentally rugged • Field replaceable diode elements Agilent 423B Agilent 8470B

Contextual Info: 423BF1AH1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.6 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.05 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’

HITACHI RF APPLICATION

Abstract: HVC133 DSA003642
Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B Z Rev. 2 Feb. 2000 Features • Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Hitachi DSA00175

Contextual Info: HM62Y16258B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-423B (Z) Rev. 2.0 ’99. 10. 14 概要 HM62Y16258B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を 採用し，高密度，高性能，低消 費電力を実現しております。し たがって，HM62Y16258B シ

Contextual Info: 423BB1AI1 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 423BC1AI1 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

8472B

Abstract: agilent 8472b 00423-60003 08473-80002 08470-60012 423B 8470 Detectors low barrier schottky 8470B
Contextual Info: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • • • • • Agilent 423B Excellent broadband flatness Low broadband SWR High burnout protection Environmentally rugged Field replaceable diode elements I 50 µA/div

HVC133

Abstract: Hitachi DSA0047
Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B Z Rev. 2 Feb 2000 Features • Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: 423BB1AF1 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0

Contextual Info: SN75146 DUAL DIFFERENTIAL LINE RECEIVER SLLS0158 - FEBRUARY 1986 - REVISED MAY 1995 D OR P PACKAGE CTOP VIEW Meets or Exceeds the Requirements of ANSI EIA/TIA-422-B and -423-B Meets or Exceeds the Requirements of ANSI EIA/TIA-232-E and ITU Recommendation V.28 With External

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

UA79G

Abstract: SYPM SE5554 ua723 transistor substitution chart regulator 78G cs 550-is MA79G S659 uA78G
Contextual Info: Voltage Regulators INTRODUCTION The wide use of integrated circuits in sys­ tems has frequently led to the power supply and regulator portions taking a dispropor­ tionate share of the volume of the system. The introduction of flexible, high perform­ ance regulator ICs such as the 550 has made

Contextual Info: AM3715, AM3703 SPRS616F – JUNE 2010 – REVISED AUGUST 2011 www.ti.com AM3715, AM3703 Sitara ARM Microprocessors Check for Samples: AM3715, AM3703 1 AM3715, AM3703 Sitara ARM Microprocessors 1.1 Features 123456 • AM3715/03 Sitara ARM Microprocessors: – Compatible with OMAP 3 Architecture

Contextual Info: AM3715, AM3703 SPRS616F – JUNE 2010 – REVISED AUGUST 2011 www.ti.com AM3715, AM3703 Sitara ARM Microprocessors Check for Samples: AM3715, AM3703 1 AM3715, AM3703 Sitara ARM Microprocessors 1.1 Features 123456 • AM3715/03 Sitara ARM Microprocessors: – Compatible with OMAP 3 Architecture

1N5480

Abstract: 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800
Contextual Info: CONDITIONING S E M I C O N D PVC Ï Ë Ï aaSBMAI OOQOllI T'2-3 ' ^ 5 Silicon Rectifier Modules CSác Up to 20,000 Volts Up to 6.0 Amps FEATURES: • • • • • • • All types utilize fully glassivated, non-cavity silicon diode building blocks. Hermetically sealed devices.

Contextual Info: AM3715, AM3703 SPRS616F – JUNE 2010 – REVISED AUGUST 2011 www.ti.com AM3715, AM3703 Sitara ARM Microprocessors Check for Samples: AM3715, AM3703 1 AM3715, AM3703 Sitara ARM Microprocessors 1.1 Features 123456 • AM3715/03 Sitara ARM Microprocessors: – Compatible with OMAP 3 Architecture

SPRS507F

Abstract: ARMv6 Architecture Reference Manual transistor SS6 A 1051 A 12x12 cmos sensor 12-pin
Contextual Info: OMAP3530/25 Applications Processor www.ti.com SPRS507F – FEBRUARY 2008 – REVISED OCTOBER 2009 1 OMAP3530/25 Applications Processor 1.1 Features • • OMAP3530/25 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505C – FEBRUARY 2008 – REVISED FEBRUARY 2009 1 OMAP3515/03 Applications Processor • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • 600-MHz ARM Cortex™-A8 Core

Contextual Info: in te i 386 DX MICROPROCESSOR HIGH PERFORMANCE 32-BIT CHMOS MICROPROCESSOR WITH INTEGRATED MEMORY MANAGEMENT Optimized for System Performance — Pipelined Instruction Execution — On-Chip Address Translation Caches — 20, 25 and 33 MHz Clock — 40, 50 and 66 Megabytes/Sec Bus

sprugn4

Abstract: H2V1 DM3730 MIPI dbi ABB transmitter ask 800 OMAP3630 MIPI DPI MIPI CVBS RGB mipi bridge DM3725
Contextual Info: DM3730, DM3725 SPRS685D – AUGUST 2010 – REVISED APRIL 2011 www.ti.com DM3730, DM3725 Digital Media Processors Check for Samples: DM3730, DM3725 1 DM3730, DM3725 Digital Media Processors 1.1 Features 123456 • DM3730/25 Digital Media Processors: – Compatible with OMAP 3 Architecture