423BF1AH1 Search Results

423BF1AH1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
423BF1AH1		Conditioning Semiconductor Devices	Silicon Rectifier Modules	Scan	PDF	559.18KB	4
423BF1AH1		Conditioning Semiconductor Devices	3.6A Iout, 200V Vrrm General Purpose Silicon Rectifier	Scan	PDF	257.04KB	4

423BF1AH1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 423BF1AH1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.6 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.05 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’	Original	423BF1AH1 Voltage200 Current25u	PDF
1N5480 Abstract: 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800 Contextual Info: CONDITIONING S E M I C O N D PVC Ï Ë Ï aaSBMAI OOQOllI T'2-3 ' ^ 5 Silicon Rectifier Modules CSác Up to 20,000 Volts Up to 6.0 Amps FEATURES: • • • • • • • All types utilize fully glassivated, non-cavity silicon diode building blocks. Hermetically sealed devices.	OCR Scan	423MD11AH1 423SD14AH1 423ND17AH1 TB-0010 1N5480 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: 423BF1AH1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.6 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.05 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’

Original

423BF1AH1 Voltage200 Current25u

PDF

1N5480

Abstract: 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800
Contextual Info: CONDITIONING S E M I C O N D PVC Ï Ë Ï aaSBMAI OOQOllI T'2-3 ' ^ 5 Silicon Rectifier Modules CSác Up to 20,000 Volts Up to 6.0 Amps FEATURES: • • • • • • • All types utilize fully glassivated, non-cavity silicon diode building blocks. Hermetically sealed devices.

OCR Scan

423MD11AH1 423SD14AH1 423ND17AH1 TB-0010 1N5480 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800

PDF