BUP410 Search Results

Contextual Info: SIEMENS BUP410D IGBT With Antiparallel Diode « Preliminary data A • Low forward voltage drop T • • High switching speed /X V % / ,.,íí Í • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 E C Type ^CE h

bup410d

Abstract: BUP41
Contextual Info: SIEMENS BUP 41 OD IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP410D ^CE 600V 13A C Pin 3 E Package Ordering Code

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

BUP314

Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for

Contextual Info: Preliminary data SIEMENS SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

SIEMENS dpak diode

Contextual Info: Preliminary data SIEMENS SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

SGP02N60

Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D
Contextual Info: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

BUP410D

Abstract: SGB06N60 SGD06N60 SGP06N60 SGU06N60
Contextual Info: Preliminary data SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

2A mosfet igbt driver stage

Abstract: igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60
Contextual Info: TECHNOLOGY A MOSFET alternative for switching frequencies up to more than 300 kHz High-speed 600V IGBT in NPT technology Because of its many advantages over PT technology, NPT technology has gained increasing acceptance for IGBTs with breakdown voltages of over 1 kV. Siemens is now continuing this logical progression with

Contextual Info: SIEMENS SGP02N60 P re lim in a ry data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type VCB h Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings Parameter Symbol Collector-emitter voltage ''CE Collector-gate voltage

Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

SGP02N60

Abstract: BUP410D
Contextual Info: SGP02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings

Q67041-A4709

Abstract: BUP410D SGP06N60
Contextual Info: SGP06N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings

BUP410D

Abstract: SGD04N60 SGB04N60 SGP04N60 SGU04N60 SIEMENS dpak diode
Contextual Info: Preliminary data SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

MOV 270/20

Abstract: BUP410D P-TO252 SGD06N60 BUP41
Contextual Info: SGD06N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD06N60 600V 6A P-TO252 Q67040-A . . . . Maximum Ratings

Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

SGD04N60

Abstract: BUP410D P-TO252
Contextual Info: SGD04N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD04N60 600V 4A P-TO252 Q67040-A . . . . Maximum Ratings

Contextual Info: SIEMENS SGD06N60 P relim in ary data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCB k Package Ordering Code SGD06N60 600V 6A P-T0252 Q67040-A . . . . Maximum Ratings Symbol Values UJ Parameter 600 Collector-emitter voltage Collector-gate voltage

BUP410D

Abstract: P-TO252 SGD02N60
Contextual Info: SGD02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD02N60 600V 2A P-TO252 Q67040-A . . . . Maximum Ratings

SGP04N60

Abstract: BUP410D
Contextual Info: SGP04N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP04N60 600V 4A TO-220 AB Q67040-A . . . . Maximum Ratings

BUP 312

Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186