SGP04N60 Search Results

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

SGP04N60

Abstract: SIGC05T60SN
Contextual Info: Preliminary SIGC05T60SN IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC05T60SN 600V This chip is used for: • DuoPack SGP04N60

Contextual Info: SIGC05T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC05T60SNC 600V This chip is used for: • DuoPack SGP04N60 G Applications:

SIEMENS dpak diode

Contextual Info: Preliminary data SIEMENS SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

g04n60

Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:

TO220 package infineon

Abstract: SGP04N60 SIGC05T60SNC L7202-S
Contextual Info: SIGC05T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC05T60SNC 600V This chip is used for: • DuoPack SGP04N60 G Applications:

SGU04N60

Contextual Info: SGP04N60, SGB04N60 SGD04N60, SGU04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

BUP410D

Abstract: SGD04N60 SGB04N60 SGP04N60 SGU04N60 SIEMENS dpak diode
Contextual Info: Preliminary data SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

G04N60

Abstract: SGD04N60 PG-TO-220-3-1 P-TO252-3-11 SGP04N60
Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: Preliminary SIGC05T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC05T60SNC VCE 600V This chip is used for: • DuoPack SGP04N60

G04N60

Contextual Info: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:

ic 0941

Abstract: SGD04N60 P-TO252 SGB04N60 SGP04N60 SGU04N60 DIODE 3A 1000V
Contextual Info: SGP04N60, SGB04N60 SGD04N60, SGU04N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

ic 0941

Abstract: SGB04N60 SGD04N60 SGP04N60 SGU04N60 Q67040-S4442
Contextual Info: SGP04N60, SGD04N60, SGB04N60 SGU04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

SGP04N60

Abstract: SIGC05T60SNC
Contextual Info: SIGC05T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC05T60SNC 600V This chip is used for: • DuoPack SGP04N60 G Applications:

SGP04N60

Abstract: BUP410D
Contextual Info: SGP04N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP04N60 600V 4A TO-220 AB Q67040-A . . . . Maximum Ratings

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

2kW flyback PFC

Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Contextual Info: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]

igbt dimmer

Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
Contextual Info: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling

Electric Welding Machine diagram

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS
Contextual Info: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

IGBT SKW30N60HS

Abstract: igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel
Contextual Info: High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : NPT Technologie : The key component for power Electronic applications – the power switch - is still a