BUP313 Search Results

G15T120

Abstract: bup313
Contextual Info: IGW15T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

Contextual Info: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D

K15T120

Abstract: K15T120 igbt k15t120 equivalent IKW15T120 BUP313D PG-TO-247-3-21 RG 56
Contextual Info: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

Contextual Info: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •           Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D

9p marking

Abstract: bup313
Contextual Info: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

G15T120

Abstract: bup313 equivalent BUP313 IGW15T120
Contextual Info: IGW15T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

G15T120

Abstract: igbt 500V 15A BUP313 IGW15T120 PG-TO-247-3
Contextual Info: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

K15T120

Abstract: K15T120 igbt IKW15T120 BUP313D PG-TO-247-3
Contextual Info: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D

bup313 equivalent

Contextual Info: Preliminary IGW15T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology • • • C • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply

K15T120

Abstract: K15T120 igbt k15t120 equivalent
Contextual Info: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D

G15T120

Abstract: bup313 equivalent
Contextual Info: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply

BUP313

Abstract: IGW15T120 IGW25T120
Contextual Info: IGW15T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply

IKW15T120

Abstract: BUP313D Q67040-S4516 TR 104
Contextual Info: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10µs

Contextual Info: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D

G15T120

Abstract: BUP313 IGW15T120 PG-TO-247-3
Contextual Info: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply

BUP313

Abstract: bup313d integrated circuit MAR 521
Contextual Info: Preliminary IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10µs

BUP313D

Contextual Info: SIEMENS BUP313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VC E BLIP 313D 1200V 32A h Package Ordering Code TO-218 AB Q67040-A4228-A2

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

T0247AC

Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

P 313D

Abstract: BUP313D
Contextual Info: SIEMENS BUP 313D IGBT W ith Antlparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VfcE h 1200V 32A BUP 313D P in i Pin 2 Pin 3 G C E Package

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]