BU2720AF Search Results

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

BU2720AF

Abstract: BY228
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V.

22af

Abstract: IBM REV 2.8 Circuit sheet BU2720AF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

BU2720AF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

bu2720dx

Abstract: bu2720dx transistor BU2720DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up

BU2720DF

Abstract: BU2720AF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

BU2508-AX

Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Contextual Info: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX

BU1508DX

Abstract: BU1508AX BU2708AF bu2525af BU2508-AX BU2720DF BU2520DX
Contextual Info: Philips Semiconductors Concise Catalogue 1996 High-voltage and switching NPN power transistors POWER SEMICONDUCTORS HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS continued type number package 35 35 45 45 45 45 125 125 45 45 45 45 45 45 125 125 45 45 45

BU25150X

Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387

BU2722AF

Abstract: BU2722AX BU2720AF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for

BU2722AF

Abstract: BU2722DF bu2720
Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for

BU2720AX

Abstract: BU2720AF IBM REV 2.8 Circuit sheet
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

BU2720DF

Abstract: BU2720D BU2720AF ICA26
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand

BU2722AF

Abstract: Philips Capacitor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.

Philips TdA3619

Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Contextual Info: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

BU2722AF

Abstract: BY228
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand

SOT399

Abstract: BU2720DX BU2708AX BU2708DX BU2720AX BU1507AX BU2725DX BU2515DX BU2532
Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors Selection guide This selection guide lists the devices in the book, grouped in accordance with the collector-emitter voltage VCesm parameter and in order of the collector current (lc) parameter and power dissipation (Ptot). Types added to the range

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

BUT11APX equivalent

Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
Contextual Info: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210