BTA1 Search Results

BTA12 Application note

Abstract: "BTA12" Application note bta12 600 triac circuit diagram for application BTA12 snubber bta12 bta12 application BTA12-600 BTA12-600BW3G BTA12-800BW3G BTA12600B
Contextual Info: BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • •

bta12 600 triac circuit diagram for application

Abstract: BTA12 snubber "BTA12" Application note bta12 application BTA12 Application note BTA12-600CW3G
Contextual Info: BTA12-600CW3G, BTA12-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • •

triac 800V 1A

Abstract: bta 700 BTB12 bta12 application BTA12 Triac BTB12 600 B TRIAC BTB 24 600 BW
Contextual Info: BTA12 BW/CW BTB12 BW/CW SNUBBERLESS TRIACS . . . FEATURES HIGH COMMUTATION : dI/dt c > 12A/ms without snubber HIGH SURGE CURRENT : ITSM = 120A VDRM UP TO 800V BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB12 BW/CW triac family are high performance glass passivated chips technology.

BTA 139

Abstract: BTA 139 600 TRIAC BTB 16 TRIAC BTB12 600 Triac BTB12 600 B BTB12 bta12 phase control application BTA12 BTA 600 12 triac BTB 700
Contextual Info: BTA12 B/C BTB12 B/C STANDARD TRIACS . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : dV/dt c > 5 V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB12 B/C triac family are high performance glass passivated PNPN devices.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BTA12 Preliminary TRIAC 12A TRIACS DESCRIPTION  The UTC BTA12 is a 12A triacs, it uses UTC’s advanced technology to provide customers with high commutation performances and voltage insulated tab, etc. The UTC BTA12 is suitable for inductive loads, general purpose AC

bta12

Abstract: BTA12 Application note bta12 application BTA12 snubber bta12 phase control application triac bta12 triggering BTA12 purpose BTA12 600 DATASHEET BTA12-600C4G bta12 600 triac circuit diagram for application
Contextual Info: BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • •

A1210

Abstract: BTA1210FP
Contextual Info: CYStech Electronics Corp. Spec. No. : C656FP Issued Date : 2005.03.29 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

A1210

Abstract: BTA1210J3
Contextual Info: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210J3 Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

BTA1576S3

Abstract: BTC4081S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description • The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose

A1300 transistor

Abstract: A1300 GR transistor A1300 A1300 A1300 y BTA1300A3 a13003 C816A3 bta130
Contextual Info: CYStech Electronics Corp. Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 1/4 Low VCE SAT PNP Epitaxial Planar Transistor BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications.

BTA140

Abstract: BT136
Contextual Info: Philips Semiconductors Product specification Triacs BTA140 series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling

TRIAC BTa 16 600 BW

Abstract: TRIAC BTB 16 600 BW bta16 TRIAC BTB 16 400 BW TRIAC BTA 28 TRIAC BTB16 600 BTA16-400 btb 16 700 bw WA-140 BTA 16
Contextual Info: SGS-THOMSON MOElMELlOTMlKgi BTA16 BW/CW BTB16 BW/CW SNUBBERLESS TRIACS FEATURES . HIGH COMMUTATION : dWdt c > 14A/ms without snubber • HIGH SURGE CURRENT : Ij s m = 160A ■ VDrm UP TO 800V ■ BTA Family : INSULATING VOLTAGE = 2500V(rm S) (UL RECOGNIZED : E81734)

TXAL 2215 B

Abstract: txal TXAL3815 triacs btb 15 700 TXAL2210 BTA12-700 TYAL2215 TYAL3815 txal*2215 BTA12-400
Contextual Info: o triacs triacs THOMSON-CSF Types V 10 A rm s / TCOT9 = 75°C 12 A rm s / Tease = Uninsulated Insulated BTA12-200 BTB12-200 BTA12-400 BTB12-400 BTB12-700 BTA12-700 With sufi ixes B,C 110°C 75°C X i CO I2t Im A ) 1 II + + + — Tj = M B C I2t = 110°C 125

triac bta12 triggering

Abstract: BTA12 600V bta12 speed control application BTA12 interface with ac motor bta12 phase control application Triac BTB12 600 B BTA12 Application note TRIAC BTA-SERIES TRIAC BTB12 600 Triac BTA 12A 600 V
Contextual Info: BTA12, BTB12 and T12 Series 12A TRIACS SNUBBERLESS , LOGIC LEVEL & STANDARD Table 1: Main Features A2 Symbol Value Unit IT RMS 12 A VDRM/VRRM 600 and 800 V IGT (Q1) 5 to 50 mA G A1 A2 A2 A1 A2 DESCRIPTION Available either in through-hole or surface-mount

A1015 gr

Abstract: Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W
Contextual Info: Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

BTA1579S3

Abstract: BTC4102S3
Contextual Info: Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V

A1210

Abstract: BTA1210T3
Contextual Info: CYStech Electronics Corp. Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

4z sot23 marking code

Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

a1012 transistor

Abstract: transistor A1012 A1012 a1012* transistor IC 4047 BTA1012E3 C601E3 BTA1012 A-101-2 data sheet of IC 4047
Contextual Info: CYStech Electronics Corp. Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features • Low VCE sat , VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics

a1952

Abstract: transistor A1952 IC 4047 a1952 transistor IC 4047 datasheet MARKING A1952 BTA1952E3
Contextual Info: CYStech Electronics Corp. Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features • Low VCE sat , VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics

BTA151-650R

Abstract: BTA151 BT145 BT151 650R
Contextual Info: Philips Semiconductors Product specification Thyristors sensitive gate BTA151-650R GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications.

Contextual Info: BTA16-600CW3G, BTA16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • •

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BTA16A TRIAC 16A TRIACS  DESCRIPTION The UTC BTA16A is a 16A triacs which can be operated in 3 quadrants only, it uses UTC’s advanced technology to provide customers with high commutation performances, etc. The UTC BTA16A is suitable for inductive load switching

btb 139

Abstract: TRIAC BTB 12 600 B bta12 application BTA12 BTB12 T0220AB btb 15 600 b CE010 BTA 139 btb 400
Contextual Info: / ^ T SG S-THO M SO N Ms HD g[E(Q i[LE(S¥^(Q)[iiOO i BTA12 B/C BTB12 B/C STANDARD TRIACS FEATURES . HIGH SURGE CURRENT CAPABILITY . COMMUTATION : (dV/dt)c> 5 V^is • BTA Family : INSULATING VOLTAGE = 2500V(rms) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB12 B/C triac family are high perform­