BT8C Search Results

stk 412 -410

Abstract: stk 412 -420 stk 432 070 MM5823 STK 412 240 CIR 2262 cir 2262 af stk 412 -230 hiab STk 412 120
Contextual Info: S lB b b B R DDOtilS4 “i2 ñ m C I R wm. C L -C D 2 4 0 0 /C D 2401 •SK-H CIRRUS LOGIC Data Book FEATURES Four-Channel, Multi-Protocol Communications Controller General • Four full-duplex channels ■ All channels support async, blsync, HDLC/ SDLC, and X.21 programmable sync protocols

transistor nd8

Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
Contextual Info: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.

Contextual Info: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon

Series BR8/BS8/BT8 Silicon Fast Recovery 2.0 AMP Diodes

Abstract: diodes Fast Recovery Diodes BT8C BR8M5 BR8M Edal
Contextual Info: EDAL SERIES BR8/BS8/BT8 SILICON FAST RECOVERY 2.0 AMP DIODES INCHES MIN. MAX. 0.028 0.034 0.08 0.107 0.160 0.205 1.00 DIM. A B C D Io 2 Amp @ Is 60 AMPS Vf 1.4 max. v@ Ir 20 uA max. STYLE 50 2.0 amp @ C @ PIV MILLIMETER MIN. MAX 0.71 0.86 2.03 2.74 4.10 5.20

CB12000

Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
Contextual Info: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)

0.18-um CMOS technology characteristics

Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low

ST100

Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
Contextual Info: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.

FWDF09S

Abstract: Steckverbinder
Contextual Info: Wasserdichte Steckverbindersystem Waterproof connector system Bestellschlüssel für wasserdichte Steckverbinder Ordering code for waterproof connectors 76 TECHNISCHE ÄNDERUNGEN VORBEHALTEN – MAßE IN MILLIMETER INCHES IN KLAMMERN Technische Daten Technical data

TY320

Abstract: yamaha SERVICE MANUAL capacitor 68nf 48-PIN AC97 AES17-1991 ST7597 TQFP48 IR814 modem echo cancellation dsvd
Contextual Info: ST7597 AC97 AUDIO CODEC PRO DU CT PREVIEW • ANALOG I/O COMPONENT OF 2-CHIP PC AUDIO SOLUTION ■ STANDARD 48-PIN PACKAGE ■ SPLIT DIGITAL/ANALOG ARCHITECTURE FOR IMPROVED S/N RATIO >90dB achievable ■ 16-BIT STEREO FULL-DUPLEX CODEC WITH FIXED 48K SAMPLING RATE

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells

CB55000

Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST
Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low

bt8c

Contextual Info: ST7597 AC97 AUDIO CODEC PRO DU CT PREVIEW • ANALOG I/O COMPONENT OF 2-CHIP PC AUDIO SOLUTION ■ STANDARD 48-PIN PACKAGE ■ SPLIT DIGITAL/ANALOG ARCHITECTURE FOR IMPROVED S/N RATIO >90dB achievable ■ 16-BIT STEREO FULL-DUPLEX CODEC WITH FIXED 48K SAMPLING RATE

ST7597

Abstract: ST7597 Datasheet capacitor 68nf 48-PIN AC97 AES17-1991 TQFP48 capacitor 0.1m.f BT8C
Contextual Info: ST7597 AC97 AUDIO CODEC . . . . . . . . . PRODUCT PREVIEW ANALOG I/O COMPONENT OF 2-CHIP PC AUDIO SOLUTION STANDARD 48-PIN PACKAGE SPLIT DIGITAL/ANALOG ARCHITECTURE FOR IMPROVED S/N RATIO >90dB achievable 16-BIT STEREO FULL-DUPLEX CODEC WITH FIXED 48K SAMPLING RATE

Contextual Info: M T C -1 2 0 0 0 C M O S 1 .2 u Standard Cell Library Services CMOS Family Features • Technology: - 1.2 micron tw in -w ell CMOS process w ith polycide gates, double layer m etal, linear Ihin oxide capacitors and high ohmic resistors - Shrink capability to