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CB65000 Datasheets (25)

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STMicroelectronics

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CB65000	STMicroelectronics	HCMOS8D 0.18MICRON STANDARD CELLS FAMILY	Original	PDF	577.66KB	12
CB65000	STMicroelectronics	HCMOS8D 0.18MICRON STANDARD CELLS FAMILY	Original	PDF	531.28KB	12
CB65000-PQFP100	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP120	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP128	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP144	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP160	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP208	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP32	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP44	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP48	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP64	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-PQFP80	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-TQFP100	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23

CB65000-TQFP120	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-TQFP128	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-TQFP144	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-TQFP160	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-TQFP176	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23
CB65000-TQFP208	STMicroelectronics	HCMOS8D Standard Cell Family	Original	PDF	498.15KB	23

CB65000 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
0.18-um CMOS technology characteristics Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low	Original	cb65000 85k/mm 30nanowatt/gate/mhz/0.18-um cmos technology characteristics +8cb55000 d950 st10 st100 st20 cmos gate array stmicroelectronics 12v na 19.5v 0.18-um cmos technology characteristics 1.2v	PDF
ST100 Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate Contextual Info: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.	Original	cb65000 85k/mm2 30nanowatt/gate/mhz/stdload st100 +5cb55000 d950 st10 st20 tristate nand gate	PDF
CB55000 Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low	Original	cb65000 85k/mm 30nanowatt/gate/mhz/cb55000 +8d950 st10 st100 st20 12v na 19.5v 0.18-um cmos technology characteristics horizontal output section 0.18um standard cell st	PDF

Catalog Datasheet

Type

Document Tags

PDF

0.18-um CMOS technology characteristics

Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low

Original

cb65000 85k/mm 30nanowatt/gate/mhz/0.18-um cmos technology characteristics +8

PDF

ST100

Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
Contextual Info: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.

Original

cb65000 85k/mm2 30nanowatt/gate/mhz/stdload st100 +5

PDF

CB55000

Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST
Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low

Original

cb65000 85k/mm 30nanowatt/gate/mhz/cb55000 +8

PDF