BT 808 400 Search Results

transistor bt 808

Abstract: BT 808 600 bt 808 BT 159 bt 1488 BT 808 400 CHCI21 corrosion inhibitor BT 386
Contextual Info: 5E Fiberglass Enclosure Accessories Drain & Breather Vent CHDV - Drain Vent Encapsulated Screws CHDVKIT - Drain Vent Kit CHDVKIT4X - Drain Vent Kit 4X Louver Plate Vent CHBVKIT4X - Breather Vent Kit 4X Carrying Handle 5E CHLP1 CHLPKIT CHENCAP2PK CHENCAP4PK

V59C1

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25A 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

peb4266t

Abstract: PEB 4266T 4266V PEB3265F 3264H PEB 4264t v1.2 3265H PEB 3264 v1.4 PEB3265H 4264T
Contextual Info: D u S L I C F A M I LY OV E R V I E W INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G Features SLICOFI-2 Number of voice channels SLICOFI-2S SLICOFI-2S2 2 2 2 DTMF detection Yes No No Line echo cancellation up to 8 ms

74HC4078

Abstract: 4078B 50J1 54HC 74HC M54HC4078 M74HC4078 ic 74hc4078
Contextual Info: SGS-THOMSON M54HC4078 M74HC4078 IM 03 Hkd©ïï[M [fM0 g§ 8 INPUT NOR/OR GATE i HIGH SPEED tPD = 14 ns (TYP.) at Vc c = 5V i LOW POWER DISSIPATION Ice = 1 /»A (MAX.) at T a = 25°C HIGH NOISE IMMUNITY V nih = V n il = 28% VCC (MIN.) OUTPUT DRIVE CAPABILITY

2341B

Abstract: kool mu DB3 0531 1803e 455E 9742e mpp a2 A 14U KH K-102
Contextual Info: Material Properties PERMEABILITY VS. T, B, & F – TYPICAL Permeability µ µ vs. T dynamic range (-50˚ C to +100˚C) Painted cores usuable to 200˚C µ vs. B dynamic range 50 to 4000gauss (peak at 1000 gauss) µ vs. F. flat to. 14µ 0.6% +0.4% 9 MHz

Contextual Info: PRELIMINARY V73CBG01 808/168 RB HIGH PERFORMANCE 1Gbit DDR3L SDRAM 8 BANKS X 16Mbit X 8 8 BANKS X 8Mbit X 16 - G6 - H7 - I9 - J11 - K13 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Clock Cycle Time ( tCK5, CWL=5 ) 3.0ns 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 )

Contextual Info: PRELIMINARY V73CAG01 808/168 RB HIGH PERFORMANCE 1Gbit DDR3 SDRAM 8 BANKS X 16Mbit X 8 8 BANKS X 8Mbit X 16 - G6 - H7 - I9 - J11 - K13 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Clock Cycle Time ( tCK5, CWL=5 ) 3.0ns 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 )

V59C1G01

Contextual Info: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1G01 408/808 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 18 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

IEC 874-1 method 6 for fibre optic

Contextual Info: FC/PC Series Page A The RADIALL range of FC/PC connectors enables low reflectance and low insertion loss termina­ tions to be manufactured for today’s high performance singlemode transmission systems. -F C /P C type I EC 874-7 / CECC BS EN 186110 - Zirconia ceramic alignment sleeve

Contextual Info: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

V59C1G01

Contextual Info: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

BT 808 600

Abstract: BT 808 400 an 503 hall sensor DFN10 G003 G008 hall 506 analoge schaltkreise
Contextual Info: iC-MZ HALL-DIFFERENZSENSOR Ausgabe A2, Seite 1/11 EIGENSCHAFTEN ANWENDUNGEN ♦ ♦ ♦ ♦ ♦ Zahnradabtastung ♦ Polrad- und Magnetbandabtastung ♦ Magnetische Inkrementalgeber ♦ Näherungsschalter ♦ Zweikanal-Leitungstreiber bis 100 kHz ♦ ♦ ♦

AH 503 hall sensor

Abstract: hall sensor N 503 of AH 503 hall sensor
Contextual Info: iC-MZ DIFFERENTIAL HALL SWITCH Rev A3, Page 1/11 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ Gear wheel sensing ♦ Pole wheel and magnetic tape scanning ♦ Magnetic incremental encoders ♦ Proximity switches ♦ Two-channel line drivers up to 100 kHz ♦

hall effect position sensor 503

Abstract: BT 808 600 hall 506 ua BT 816 803 Hall Effect Sensor clear DFN10 hall sensor N 503
Contextual Info: ar y n i im prel iC-MZ DIFFERENTIAL HALL SWITCH Rev A1, Page 1/11 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ Gear wheel sensing ♦ Pole wheel and magnetic tape scanning ♦ Magnetic incremental encoders ♦ Proximity switches ♦ Two-channel line drivers up to

hall effect position sensor 503

Abstract: BT 808 600 Sensor Magnetic clear DFN10 hall 503 hall 808 an 503 hall sensor DFN10 G003 G008
Contextual Info: iC-MZ DIFFERENTIAL HALL SWITCH Rev A2, Page 1/11 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ Gear wheel sensing ♦ Pole wheel and magnetic tape scanning ♦ Magnetic incremental encoders ♦ Proximity switches ♦ Two-channel line drivers up to 100 kHz ♦

PF5AN

Abstract: HD64F2238R 2222 733
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

78C10

Abstract: Hitachi DSA00280 hd64f2227
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2239 Series, H8S/2238R Series, H8S/2237 Series, H8S/2227 Series H8S/2239 HD64F2239, H8S/2239 HD6432239, H8S/2239 HD6432239W H8S/2238 HD64F2238R, H8S/2238 HD6432238R, H8S/2238 HD6432238RW H8S/2236 HD6432236R, H8S/2236 HD6432236RW

Contextual Info: SG572648TG8EZUU May 3, 2008 Ordering Information Part Numbers Description Module Speed SG572648TG8EZDB 64Mx72 512MB , DDR2, 200-pin SO-RDIMM, Registered, ECC, 64Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant), Industrial