BSS89 APPLICATION Search Results

BSS89

Abstract: BSS89 APPLICATION BP317 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24 Philips Semiconductors Product specification N-channel enhancement mode

Contextual Info: BSS89 _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as

BSS89 APPLICATION

Abstract: bss89 BSS89/D
Contextual Info: MOTOROLA Order this document by BSS89/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement 2 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDSS 200 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 p.s

Contextual Info: BSS89 ' i _ vv FOR DETAILED INFORMATION! SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as

BSS89

Contextual Info: BSS89 _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line

Contextual Info: BSS89 _ J V_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line

transistor scans sheet

Abstract: BSS89 B3 transistor
Contextual Info: V> EL J I BSS89 m ^53*124 ÜD7ÛÛ25 4ÖM I SIC3 NAPC/PHILIPS SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SH EET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as

ap 4466

Abstract: transistor 359 AJ BSS89 APPLICATION
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSS89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b Philips Semiconductors 1998 Apr 24 PHILIPS PHILIPS Philips S e m ico nd uctors

BSS89 APPLICATION

Abstract: BST110 bsp106 bsn254 BS-208 BSN20 to92
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs VERTICAL D-MOSFETS OVERVIEW N/P leaded channel TO-92 other PRODUCT DATA: PA G E S 43-45 surface-mount main SOT23 SOT89 SOT223 application

BSS89

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching DESCRIPTION 1 g gate • No secondary breakdown.

PCF2103

Abstract: PCF2104 PCF2105 LCD 240 x 240 mono TDA7050 BC558 driver BC557 circuits ic Telecom book philips transistor 1094 NPN transistor 310
Contextual Info: Philips Semiconductors Semiconductors for Wired Telecom Systems n ex Types added to the range since the last issue of data handbook IC03a are shown in bold print. The types showing an “x”instead of a page number, are not printed in the book, but appear in the selection guides

Amplifier with transistor BC548

Abstract: AUDIO Amplifier with transistor BC548 1315 TRANSISTOR transistor 1151 transistor transistor 2n5401 TDA7050 BC327 NPN transistor datasheet BC547 driver BUX86 TRANSISTOR
Contextual Info: Philips Semiconductors Semiconductors for Wired Telecom Systems Index Types added to the range since the last issue of data handbook IC03a are shown in bold print. The types showing an “x”instead of a page number, are not printed in the book, but appear in the selection guides

BGY46B

Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module

A571 TRANSISTOR

Abstract: BATTERY LEVEL INDICATOR CT918 transistor 1247 IC NE 555 UMA1018 UMA1000LT ic 1 ne 555 All Microphone SA612
Contextual Info: P hilips Sem iconductors Selection guide Alphanumerical index ALPHANUMERIC INDEX PAGE P 80C552/(P)83C552 single-chip 8-bit microcontroller 49 (P)80CL31/(P)80CL51 low-voltage single-chip 8-bit microcontroller 54 (P)80CL410/(P)83CL410 low-voltage/low-power single chip 8-bit microcontroller with l2C-bus

CT914

Abstract: philips audio amplifier ic guide UMA1000LT P-Channel RF Amplifier Philips Semiconductors Selection Guide All Microphone CT918 "true Logarithmic Amplifier" TDA7050 bs107 transistor
Contextual Info: Philips Semiconductors Selection guide Functional index PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC TEA1060/1061 versatile telephone transmission circuits with dialler interface; 304 TEA1060: low-impedance input for dynamic and magnetic microphones;

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –

philips bsd215

Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment

TDA7052 application note

Abstract: 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide TDA7050 PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE
Contextual Info: Objective specification Philips Semiconductors Listening-in and handsfree ICs IC03 OVERVIEW OF LISTENING-IN ICs Supply voltage V Details Type Current Speech Line consumpt. powered part (mA) PD<1> TDA7050 loudspeaker amplifier 1.6 to 6.0 no no 3.2 no TDA7052

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

2n1613 equivalent

Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection

2N5458

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD54DWT1 Preliminary Information Dual Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

BC237

Abstract: MPF4391
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Schottky Barrier Diodes BAT54SWT1 Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces