BSS84 P Search Results

bss84

Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking

bss84 spice

Abstract: transistor k84 marking code 27a ds30149 BSS84-7-F BSS84 MARKING CODE BSS84 K84 MARKING 2N7002 J-STD-020A
Contextual Info: BSS84 SPICE MODEL: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version A B

BSS84

Abstract: MOSFET P-Channel sot-23
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e BSS84 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

BSS84 PD Motorola

Abstract: BSS84 BSS84 phoenix
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA  BSS84 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Motorola Preferred Device P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET 3 DRAIN 3 1 2 1 GATE CASE 318–08, Style 21

BSS110

Abstract: BSS84
Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

TRANSISTOR SMD MARKING CODE dk

Abstract: TRANSISTOR SMD MARKING CODE SMD TRANSISTOR MARKING code DD TRANSISTOR SMD CODE PACKAGE SOT23 marking code UL SMD Transistor smd transistor marking br TRANSISTOR SMD MARKING CODE A1 transistor SMD DK TRANSISTOR SMD CODE 339 smd code marking 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode

TRANSISTOR SMD MARKING CODE dk

Abstract: TRANSISTOR SMD MARKING CODE A1 BSS84 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE 339
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

b84 diode

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

A03 transistor

Abstract: marking A03 BSS84 MMBT4401
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

bss84

Abstract: TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

BSS84 MARKING CODE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

BSS84

Abstract: BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage

BSS84 Equivalent

Abstract: 30PF BSS84
Contextual Info: BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card

bss110

Abstract: 017adc bss84
Contextual Info: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: F /M R C H II-D May 1999 M ICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

DS30149

Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

transistor k84

Abstract: p-channel SOT-23 K84 SOT-23 marking K84 K84 SOT23 BSS84 MARKING CODE ds30149 BSS84 bss84 k84 k84 transistor sot 23 K84 MARKING
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B G TOP VIEW G Mechanical Data · · · · H Case: SOT-23, Molded Plastic

Contextual Info: MOSFET SMD Type P-Channel Enhancement Mode MOSFET BSS84 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 ● ID = -0.13 A 0.4 3 ● VDS V = -50V 1 0.55 ● RDS(ON) ≤ 10Ω (VGS = -5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1

BS850

Abstract: BSS84 DS11402 SOT23 marking GF
Contextual Info: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED,

BSS8402DW-7-F

Abstract: KNP SOT-363 2N7002 BSS84 BSS8402DW J-STD-020A
Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: BSS8402DW NEW PRODUCT Features • · · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement