IRF150CF
Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152
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buz349sfn152ytfp152ytf152+13irfp152rfh35nl0rfk35nl0pb125n60hmpb125n60hpirf150cfgentron2sk747aeum159m2sk798efm159m179ytfp1502sk747
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257AB
Abstract: BS250 2N7080 2N7082 2N7085 2N7086 2N7089 2N7090 2N7091 2N7092
Contextual Info: - 317 - * * Vd s Sí € tt £ Vg s m. Ta=25*C Id I g ss Pd V g s th) I d ss i fé f Ds(on) Vd s = or « m (Ta=25‘ C) Iß(on) g fs ft Ci ss Coss Crss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) 450* V g s -0 Vg s * /CH Vdg min * /CH (nA) Vg s
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2n7080t0-254aa2n708io-257aa+132n7082t0-204aabup61o-204aabup62257abbs2502n70852n70862n70892n70902n70912n7092
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VN88AD
Abstract: VN89AD BSR82
Contextual Info: a ss VN88AD «o VNS8AD • VI z ■ VN89AD B Siliconix 80V MOSPOWER N-Channel Enhancement Mode These power FETs are designed especially for low power high frequency inverters, interface to CMOS and TTL logic, and line drivers. FEATURES ■ ■ ■ ■ Product Summary
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vn88advn89adbsr82o-220+1o-220ab
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si 13001
Abstract: buz90 BS170 BUZ11 buzh F133 251C BSS123 BUZ71 BUZ71A
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0
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bsi07ao-226kkbs170o-226aa+14bss123o-236aat0-204aabup61o-204aabup62si 13001buz90buz11buzhf133251cbuz71buz71a
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VN88AD
Abstract: 2N6658 VN88 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+10irf620irf622vn1706dirf641irf643irf631vn88ad2n6658vn88irf633
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CROSS REFERENCE 2n6661
Abstract: 2N6658 mospower cross vn66af VN-40-A IRF232 IRF240 IRF422 IRF522 IRF540 IRF632
Contextual Info: Silico n ix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200
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o-220vn1000dirf522vn1000a+10irf540irf632irf640cross reference 2n66612n6658mospower cross vn66afvn-40-airf232irf240irf422
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1N7001
Abstract: 1N7000 IXTP4N90 2N6660 2N6661 2N6755 IXTP4N80A IXTP7N45 IXTP7N45A IXTP7N50
Contextual Info: 271 - - M. % ¿ £ tt t Vd s or * Vdg h V € A £ të (Ta=25^C) Vg s (V) Id I gss Pd * /CH * /CH (A) (W) % 1 CnA) V g s th) I dss Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ) (max)
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xtp4n80o-220ixtp4n80aixtp4n90+12t0-204aabup61o-204aabup621n70011n70002n66602n66612n6755ixtp7n45ixtp7n45aixtp7n50
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