BSR5 Search Results

marking ZS SOT-23

Abstract: marking M2 JFET BSR56
Contextual Info: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good

BSR56

Abstract: BSR57 BSR58
Contextual Info: BSR56 BSR57 BSR58 TllDflSb OObTSbS TT5 « P H I N J V . N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.

marking wh sot-23

Abstract: BSR56 BSR56L BSR57 BSR57L BSR58 BSR58L BSR67 DIODES MARKING M5
Contextual Info: M O T O R O L A SC XSTRS/R F 12E 0 | b3 t ? a S M O G a t t a ? 4 | M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage —VDS 40 V Drain-Gate Voltage V dg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L

BSR50

Abstract: bsr51 BSR52 BSR60 BSR61 BSR62
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> • b b i a ^ l D027Ô41 022 ■ APX BSR50 to 52 Jl N-P-N DARLINGTON TRANSISTORS S ilicon planar transistors in plastic T O -9 2 envelopes, intended fo r industrial switching applications e.g. p rin t ham m er, solenoid, relay and lamp driving.

BSR58

Abstract: BSR56 BSR57 sot23 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

BSR56

Contextual Info: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

BSR56

Contextual Info: BSR56 BSR57 BSR58 ? 1 1 0 ß S b Q Q b T S b S TTS « P H I N 7 V N-CHANNEL FETS Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic m icrom iniature envelope intended for application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.

BSR56

Abstract: BSR57 BSR58
Contextual Info: BSR56 BSR57 BSR58 TllDflSb O O b T S b S TT5 • PHIN N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.

transistor K 2333

Abstract: tr 1007 transistor
Contextual Info: DISCRETE SEMICONDUCTORS BSR52 NPN Darlington transistor 1999 Apr 26 Product specification Supersedes data of 1997 May 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A

BSR58

Contextual Info: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

application note jfet J111 transistor

Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

npn, transistor, sc 107 b

Abstract: BSR52 BSR62 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor Product specification Supersedes data of 1999 Apr 26 2004 Nov 11 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A

Contextual Info: dV.s.iv ^£,mi-C.ondu.d.oi Lpioducki, One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BSR52 NPN Darlington transistor FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor.

BSR57

Contextual Info: BSR57 BSR57 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark: M5 1. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25°C unless otherwise noted

BSR52

Abstract: BSR61 BSR50 BSR51 BSR60 BSR62
Contextual Info: BSR50 to 52 J P HILIPS I N T E R N A T I O N A L SbE D • 7 1 1 00 2 b 0 0 4 E 3 2 b j?Sb M P H I N N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.

Contextual Info: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236

BSR57L

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3t.7aS4 aOôtbû? 4 | X'ZS' M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage ^ V ds 40 V Drain-Gate Voltage Vdg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L CASE 318-03, STYLE 10

BSR56

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

application note jfet J111 transistor

Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
Contextual Info: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

BSR56

Contextual Info: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted

npn, transistor, sc 107 b

Abstract: BSR52 BSR62 SC-43A NXP BSR52 transistor bsr52
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BSR52 NPN Darlington transistor Product data sheet Supersedes data of 1999 Apr 26 2004 Nov 11 NXP Semiconductors Product data sheet NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A

npn, transistor, sc 107 b

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor Product specification Supersedes data of 1997 May 12 1999 Apr 26 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A

BSR61

Abstract: BSR51 bsr60 transistor bsr60 BSR50 BSR52 BSR62 2905 transistor CB050
Contextual Info: I43X& Tq-1. BSR60 to 62 J \_ P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial applications e.g. print hammer, solenoid, relay and lamp driving. N-P-N complements are the BSR50, BSR51 and BSR52.