BRY 55 A Search Results

TY6008

Abstract: TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400
Contextual Info: fast switching thyristors < 100 Arms thyristors rapides < 100 Aeff T1H0MS0N-CSF Tamb - 25°C Type •o Vr r m ■ tsm 10 ms V d RNI A 0,8 A r m s / T c a S e = 2 5 ° C BRY BRY BRY BRY 55 55 55 55 S- 30 S- 60 S-100 S-200 0,52 5 A r m s / T ^ a se = 7 5 ° C

BRY 300

Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are

BSTB0246

Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
Contextual Info: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA

TRIAC TAG 280 600

Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
Contextual Info: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV­ V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100

scr tag 2 200

Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

bry46

Abstract: thyristors BRY 300 TO64 package BRY 55 A TO-64 BRY 46 bry44 TO-64 weight TO64
Contextual Info: Thyristors T h y ris to rs BRY Series in special lo w -lin e tab package for consumer applications. CRS 1 Series in TO -5 case. CRS 3 Series in TO -64 stud-m ounted case » M 5 Type M axim um Ratings C haracteristics at T j= 2 5 °C C ontinuous forw ard

BRY 300

Abstract: BRY 55 A BRY 55 200 bry 55 2N883 BRY 100 2N877 2N878 TD5001 2N880
Contextual Info: sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •o ■RM @ V r r m d m @ Vd r m Vq t Vr r m ■ tsm ■ Tj max 10 ms V DRM A (V) 0,5 A rm s / Tease = 85°C 2N877 2N878 2N879 2N880 2N881 2N882 2N883 0,5 A im s / Tease = 75°C

BRY 300

Abstract: 2N thyristor tls 106-6 BRY55 TD6001S 2N877 2N878 2N879 2N880 BRY 55-200
Contextual Info: o THOMSON-CSF sensitive gate thyristor selector guide guide de sélection thyristors sensibles 175 sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •RM @ V r r m V r r m ■t s m ■d m @ V d r m V q t Tj max 10 ms ■o

BRY21

Abstract: BRY 21 thyristor igc
Contextual Info: BRY21 PN PN-Thyristor P re lim in a ry d a ta BRY21 is an extinguishable PNPN silicon planar thyristor tetrode in a case 5 C 4 DIN 41873 TO -12 . The anode gate (GA) is electrically connected to the case. The thyristor tetrode BRY 21 is particularly designed for use as a switch of medium

SIEMENS THYRISTOR BRY 20

Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

IC 4093 pin configuration

Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
Contextual Info: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58

BRY20

Abstract: Thyristor 40V 120A L-13 Q60217-Y20 BRY 41
Contextual Info: BRY20 PN PN-Thyristor The BRY 20 is an extinguishable silicon PNPN planar th yristo r-te tro d e in a case 5 C 4 DIN 41 873 T O -1 2 . The anode gate (G A) is electrically connected to the case. The BRY 20 is particularly suitable fo r use as a medium fast sw itch.

BRY 300

Abstract: 12T4S RSM 2322 k 471 a 2322 635 BRY 56 C 10T4S DRT76 TO-46-200 14T4S
Contextual Info: CB 10 (CB 76) (CB 7) Low power SCRs — Normal series Thyristors de faible puissance — Séries normales Case Type 'T(rsm ) (A e ff) V r r m -V d r m (V) B oîtier 0,5 and 0,8 Aeff 0,5 et 0,8 A e ff Tease <°C) •t s m (A) Toper <°C) tp 10 ms m iri 'gt

Contextual Info: REV.J TITLE: DIMENSIONS ARE IN INCHES M TOLERANCES ARE: ONE PLACE DECIMALS ± . 1 [2 .5 4 ]T H R E E PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± j-JEXJE 2° J OF 2 SEE TABLE 1

Contextual Info: DWG NO: TITLE: REV. DIMENSIONS ARE IN INCHES Z j _ TOLERANCES ARE: ONE PLACE DECIMALS ± . 1 [ 2 . 5 4 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± ILXJL. 2° BOARD SPACING

Contextual Info: REV. 5 OTHERWSE N' AB TITLE: DIMENSIONS ARE IN INCHES j ONE PLACE DECIMALS ± . 1 [ 2 . 5 4 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± 2° J rjspi rsfi issfi rjöfi rs fi iss

Contextual Info: 5 OTHERWSE N' TITLE: DIMENSIONS ARE IN INCHE5 REV. I V I .0 9 6 ONE PLACE DECIMALS ± .1 [ 2 . 5 4 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 [ ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± JULJU J & LEAD STYLE -

Contextual Info: UNLESS OTHERWISE NOTED REVISION AL DIMENSIONS ARE IN INCHES ANGLES TWO PLACE DECIMALS ± .0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± JULX 2° BOARD SPACING SURFACE MOUNT MICRO STRIPS BODY LENGTH SPEC -g g H IH S H IH I J [1 . 2 7 ] 1 OF 3

B20S

Abstract: 2SK1205
Contextual Info: M4Tb2G5 QQ13253 G22 • H I T M 2SK1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. G*le 2. Drain Flange ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 3. Source (Dimensions i, jl 0.6±02 • No Secondary Breakdown

galvo

Abstract: E12017 EL2017
Contextual Info: EL20171EL2017C é t a n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS High Efficiency Precision Servo Controller General Description Features • Low Saturation Voltage • Precision Current Sense Amplifier • Efficient Class D Switch • linear Class B Hack

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­