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SL 2128 dip 8

Contextual Info: TISP7Ö72F3, TISP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSEI5 - MARCH I9M - REVISED SEPTEMBER ¡994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • lon-lmplanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

2SJ201

Abstract: 2SJ20
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.

Contextual Info: TISP4082 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSE36 - APRE. 1987 - REVISED SEPTEMBER 19M TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge 0 0 -2 2 0 PAC KAG E

UM9151

Abstract: 1N4001X4
Contextual Info: UMC UM 9151-3 "BÊHÊnim nÊÊÊKÊÊHnHKÊÊtKÊBÊÊÊÊIÊiÊBÊÊÊm p u/s e dia ler H i Features • Direct telephone line operation ■ Redial with either * or # key ■ 4 x 3 matrix keyboard interface ■ Dialer reset for line power break > 200 msec

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: UCC3916 y UNITRODE SCSI Termpower Manager FEATURES DESCRIPTION • Integrated Circuit Breaker Function The UCC3916 SCSI termpower manager provides complete power man­ agement, hot swap capability, and circuit breaker functions with minimal ex­ ternal components. For most applications, the only external component

S1377

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown

74hc74ap

Contextual Info: 8 P R E C A U T I O N S IN H A N D L I N G 8 -1 E le ctric Static D is c h a r g e CMOS IC has a very thin gate insulation oxide film . When high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate can sometimes breaks down. In

L04A

Abstract: 2SK529
Contextual Info: 2SK529 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0s.e±ae FEATURES: . High Breakdown Voltage : V(gR)0gg=45OV

transistor d 4515

Abstract: Transistor 4515 2-21F1C GT20D101
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

2SD525

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio

2-16C1A

Contextual Info: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO

2SC2535

Abstract: 400V to 6V DC Regulator
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2535 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED HIGH VOLTAGE SW IT C H IN G APPLICATIONS. SW ITCHIN G REGULATOR APPLICATIONS. JO 3 MAX HIGH SPEED D C-DC CONVERTER APPLICATIONS. • Excellent Switching Time • High Collector Breakdown Voltage V C E O = 400V

LT 5265

Abstract: TISP7290
Contextual Info: TISP7180, TISP7290 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSOR D3063. DECEMBER 1987 FOR APPLICATIONS IN TELECOMMUNICATIONS EQUIPMENT • Breakover Voltage to Common TISP7180 . . . 180 V Max TISP7290 . . . 290 V Max • Reference Voltage TISP7180 . . . 145 V Min

UFN140

Abstract: UFN143 kd 617
Contextual Info: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

2SB1016

Abstract: 1C13MAX
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency

T20D201

Abstract: gt20d201
Contextual Info: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101

41315

Abstract: 30424 45560
Contextual Info: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its

Contextual Info: TPS2330, TPS2331 SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS277 – MARCH 2000 features D D D D D D D D D D D OR PW PACKAGE TOP VIEW Single-Channel High-Side MOSFET Driver Input Voltage: 3 V to 13 V Inrush Current Limiting With dv/dt Control