BR S8550 Search Results

Contextual Info: TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. BASE Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

B9D TRANSISTOR

Abstract: PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor
Contextual Info: S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: PNP SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR

s8550

Abstract: s8550 PNP TRANSISTOR S8550 DATASHEET S8550 transistor S8550 TO-92
Contextual Info: TRANSISTOR PNP S8550 TO-92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 CHARACTERISTICS（ （Tamb=25℃ ℃ ELECTRICAL Parameter Collector-base

transistor s8550

Abstract: transistor TO-92 S8550 S8550 S8550 equivalent s8550 transistor 01ah BR S8550 s8550 d h
Contextual Info: S8550 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURE Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.5 A Collector-base voltage V (BR)CBO :-40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

s8550 transistor

Abstract: transistor s8550 S8550 BR S8550 S8550 equivalent S8550 DATASHEET S8550 D s8550transistor S-8550 s8550 c
Contextual Info: S8550 S8550 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

2TY marking

Abstract: s8550lt1 marking 2TY 8550LT1 8550L
Contextual Info: M C C S O T -2 3 P la s tic -E n c a p s u ia te T r a n s is t o r s ^ ^ 1.BASE 2 .EMITTER 3.COLLECTOR S 8550LT1 TR A N SISTO R PNP FEATURES Power dissipation PCM: 0.3 W (T a m b = 2 5 r) C ollector current ICM: - 0 .5 A C ollector-base voltage V(BR)CBO:

sot-23 Marking 2TY

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8550LT1 1. BASE TRANSISTOR（ PNP ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ １．９ ０．９５ ２．４ １．３ ２．９ Power dissipation

transistor TO-92 S8550

Abstract: S8550 transistor S8550 S8550 equivalent transistor s8550 transistors S8550 S8550 DATASHEET BR S8550 equivalent S8550
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR PNP TO-92 1. EMITTER FEATURE Excellent hFE linearity 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

j3y transistor

Abstract: .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

j3y transistor

Abstract: SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=1.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

SOT-23 J3Y

Abstract: j3y transistor transistor j3y
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Transistor 2TY

Abstract: Transistor S8550 2TY sot-23 Marking 2TY marking 2TY S8050 2TY S8550 2TY 2ty transistor SOT-23 2TY Transistor+2TY 2ty sot23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Transistor S8550 2TY

Abstract: S8050 2TY transistor s8550 transistors s8550 S8550 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor TO-92 S8050

Abstract: transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8550 TRANSISTOR PNP 1. EMITTER FEATURE Excellent hFE Linearity 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit

BR S8550

Abstract: s8550 transistors S8550 s8550 to92
Contextual Info: S8550 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25

sot-23 Marking 2TY

Abstract: Transistor S8550 2TY marking 2TY SOT-23 2Ty
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Transistor 2TY

Abstract: Transistor S8550 2TY .2TY sot-23 Marking 2TY .2ty transistor 2ty transistor 2TY marking s8550 sot-23 S8050 2TY S8550 sot 23
Contextual Info: S8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complimentary to S8050 — Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

j3y transistor

Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
Contextual Info: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

transistor TO-92 S8550

Abstract: s8550 transistor s8550 BR S8550 S8550 transistor
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S8550 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A

j3y transistor

Abstract: SOT-23 J3Y S8050
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

s8550 npn

Abstract: S8050 npn BR S8050 npn s8050 d3 s8050 NPN S8550 npn s8050 d br s8050 d
Contextual Info: S8050 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage

transistor s8550

Abstract: BR S8550 s8550 transistor
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S8550 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.