BR A44 Search Results

BR A44

Contextual Info: A44 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.2 A Collector-base voltage V (BR)CBO :400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

BR A44

Abstract: TRANSISTOR A44 To92 transistor
Contextual Info: A44 A44 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

semikron thyristor skt 16

Contextual Info: SKT 16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 16 Features     

semikron skt 24

Abstract: C4 diode
Contextual Info: SKT 24 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 24 Features     

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

thyristor 406

Abstract: diode A44
Contextual Info: SK 8 GD 126 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 12 12  8  , -. /0 $   

Gleichrichter

Abstract: module thyristor driver semikron igbt power module
Contextual Info: SK 15 GD 126 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 12 12  8  , -. /0 $   

Contextual Info: IGLOO Datasheet P ro du c t Br ie f 1 – IGLOO™ Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation

Contextual Info: ProASIC 3 Datasheet P ro du c t Br ie f 1 – ProASIC®3 Flash Family FPGAs with Optional Soft ARM® Support Features and Benefits • • • • • 30 k to 1 Million System Gates Up to 144 kbits of True Dual-Port SRAM Up to 300 User I/Os Reprogrammable Flash Technology

br 8892

Contextual Info: IGLOO Datasheet P ro du c t Br ie f 1 – IGLOO™ Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation

Contextual Info: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.

BR A44

Contextual Info: MCC TO-92 P lastic-E n cap su late T ran sisto rs V 1 A 4 4 T R A N S IS T O R N P N FEATURES /-itfsslpation P cm; 0.625W (Tamb=25”C ) Icm: 0.2 A voltage V(BR)C80: 400V H ^ P ^ l p ^ ^aaiofaae. ¡unction temperature range T j.T s tg : ELECTRICAL. -55t; to + 150"C

BX R435

Abstract: bx r433 74hct05 A53 SMD 75C185 D9PRS CRYSTAL 14.318MHZ 2N7002-SOT23 SMD SOT23 a41 ABB cp50
Contextual Info: A B C VCC_CORE D +3.3V E +3.3V +3.3V E13 R15 A17 4 3 BG#0/HAHOLD 3 BR#0/HLOCK# 3 TS#/HADS# 3 XATS#/HBE#3 3 3 3 A0/HBE#5 A1/HBE#6 A2/HBE#7 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 M1 K13 L1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage

Contextual Info: A44 Plastic-Encapsulate NPN Features TO-92 High voltage MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

TRANSISTOR A44

Abstract: BR A44
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES y High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. EMITTER Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO

BR A44

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage

A44 npn

Contextual Info: A44 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A44 TRANSISTOR NPN 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

TRANSISTOR A44

Abstract: BR A44 datasheet of ic 555 IC 555 A44 npn
Contextual Info: A44 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES * High voltage * High Reliability 1 2 3 1 2 3 1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol

3904

Contextual Info: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration

BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.