bpy 79
Abstract: irl 3034 bestellnummern-verzeichnis Q62702-P1187 bf 478 Q62702-P935 Q62607-S61 sfh siemens SFH415-T siemens Bestellnummern-Verzeichnis
Contextual Info: SIEMENS Typ ‘ vorher Type ('formerly) BP 103 BP 103-2 BP 103-3 BP 103-4 BP 103-5 BP 104 F (*BP 104) BP 104 FS BP 104 S BPW21 BPW 33 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPX 38 B F FA FAS FS S BPX 38-2 BPX 38-3 BPX 38-4 BPX 38-5 BPX 43 BPX 43-2
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bpw21q62702-p75q62702-p79-s1q62702-p79-s2+15q62702-p79-s462702-p781q62702-p84q62702-p1605q62702-p885bpy 79irl 3034bestellnummern-verzeichnisq62702-p1187bf 478q62702-p935q62607-s61sfh siemenssfh415-tsiemens bestellnummern-verzeichnis
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Contextual Info: 01E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ Light Detector 4302571 G02727M 37E D H A RR IS SEillCOND S E CT OR 19812 1 • HAS 7 ^ 4 / - < £ / Planar Silicon Photo Transistor BPW36, BPW37 T he G E Solid S tate BPW 36 and BPW 37 are highly sensitive N P N P lan ar Silicon Phototransistors.
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g02727mbpw36bpw3792cs-42662+192cs-429s1
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BPW43
Abstract: photodiode bpw 46 BPW 43
Contextual Info: TELEFUNKEN Semiconductors BPW 43 Silicon PIN Photodiode Description BPW43 is a very high speed PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. It features low capacitance and high speed even at
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bpw4378mm2d-74025photodiode bpw 46+1bpw 43
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PHOTOVOLTAIC CELL
Abstract: BPW20 "PHOTOVOLTAIC CELL" telefunken ha 800 BPW 10 nf DIN5033 telefunken ra 200 telefunken service
Contextual Info: TELEFUNKEN ELECTRONIC 17E D TTIlLglFWOKliM electronic • fi^SDD^b DGDfiBflb 0 BPW 20 _ Cm*W«technologies IAL GG t - w - s y Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: , • For photodiode and photovoltaic cell
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bpw20fl-10photovoltaic celltelefunken ha 800+4bpw 10 nfdin5033telefunken ra 200telefunken service
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BPW21
Abstract: "PHOTOVOLTAIC CELL"
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'JSDQSb DDQÔ3R2 h H A L 66 BPW 21 ¥I[LilP«KliKI electronic ; Creati*'ftchootog'ws Silicon PN Planar Photodiode Applications: Sensor in exposure and color measuring purposes features: • Linear correlation between short circuit
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5033/ieci200sbbpw21000fl3e+1photovoltaic cell
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bpw 82
Abstract: BPW82 M/BPW82
Contextual Info: BPW 82 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .
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bpw82lpy800nm870nmd-74025+2bpw 82m/bpw82
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sk k 1191
Abstract: fll100 PHOTOVOLTAIC CELL
Contextual Info: TELEFUNKEN ELECTRONIC 17E P • fl'iHOQ'ib DOPfiBflb 0 BPW 20 ■OTILIIFWKIMelectronic CrMtiw Ttdw togies r - w - s v Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: • Log. correlation between open circuit voltage and illuminance from 10"a till 10 ’ Ix
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5033/iecsk k 1191fll100photovoltaic cell |
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BPW 14 A
Contextual Info: Bias Power BPW Wide Input Range Line 90 to 308 VAC Modular Switching Power Supplies -30° to 70°C Starting and Operating Temperature Addressing the North American 277 VAC commercial lighting standard Input Voltage: 90-308 VAC Part Number 2-watt, actual size
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us/1168w847-215-biasbpw 14 a |
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BPW41N
Abstract: bpw41 BPW41N IR DATA bpw photodiode bpw 41
Contextual Info: TELEFUNKEN Semiconductors BPW 41 N Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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bpw41nd-74025bpw41bpw41n ir data+2bpw photodiodebpw 41
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BPW83
Abstract: LARGE SURFACE AREA PHOTODIODE filter BPW 61
Contextual Info: BPW 83 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .
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bpw83lpy800nm870nmd-74025+2large surface area photodiode filterbpw 61
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SIEMENS Phototransistors BPY
Abstract: 2108a siemens dioden SFH-506 SFH100 BPW21 300FA 2108 A SFH 314 SFH-10
Contextual Info: Silicon Photodetectors Si-Fotodetektoren Summary of Types Typenübersicht 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors ♦ SFH 506 BPX 81 3. SFH 300/FA SFH 313/FA SFH 314/FA BP 103 SFH 302 SFH 305 BPX 83 BP 104 F BPW 34 FA
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300/fa313/fa314/fa309/fa+16310/fa309p/pfa303/fa203/fa213/fa214/fasiemens phototransistors bpy2108asiemens diodensfh-506sfh100bpw21300fa2108 asfh 314sfh-10
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TDA 7588
Abstract: tda 7387 TDA 1157 TDA 2310 TDA 1038 TDA 3612 55320 tda 1171 240/tda 12122 tda 2253
Contextual Info: SPSRAM_LP Low-Power Single-Port Synchronous Static RAM Features Logic Symbol spsram_lp_<w>x<b>m<y> CK CSN WEN DOUT [b–1:0] OEN A [m-1:0] DI [b–1:0] NOTES: 1. Words w is the number of words. 2. Bpw(b) is the number of bits per word. 3. Ymux(y) is one of the column mux types.
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512kbitsstd131tda 7588tda 7387+8tda 1157tda 2310tda 1038tda 361255320tda 1171240/tda 12122tda 2253
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CIP200
Abstract: bpw84 8417E ks920
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ÛTEDOTb 0D0fl4cib 7 « A L G G BPW 84 m iR D K lK lK l electronic _ T “*fI" S 3 Out* T«chooioate% >J Silicon Photo PIN Diode Applications: High speed photo detector 1 J Features: • • • • • Angle of half sensitivity ± p = 65°
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TDA 7927
Abstract: tda 9346 TDA 7877 55320 tda 8207 TDA 8517 TDA 5210 A3 TDA 8633 tda 8908 TDA 3807
Contextual Info: SPSRAM_LP Low-Power Single-Port Synchronous Static RAM Features Logic Symbol spsram_lp_<w>x<b>m<y> CK CSN WEN DOUT [b–1:0] OEN A [m-1:0] DI [b–1:0] NOTES: 1. Words w is the number of words. 2. Bpw(b) is the number of bits per word. 3. Ymux(y) is one of the column mux types.
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std130tda 7927tda 9346tda 7877+755320tda 8207tda 8517tda 5210 a3tda 8633tda 8908tda 3807
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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bpw16nbpw17nbpw85cbpw96c+14bpv11bpv23fltess5400900nmbpw 64 photobpw 64 photo diode77nbd510077nabpw 56 photobpx43-5 smdbpw 64bpw 61bpw 77na
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bpw 104
Abstract: foto transistor k 4110 BPW 34 photo K 3505 transistor transistor 309 BPW 14 A IC 314 BP 104 FAS foto transistor
Contextual Info: SI-FOTODETEKTOREN TYPENÜBERSICHT S -F I SILICON PHOTODETECTORS OTODETEKTOREN, OPTISCHE SENSOREN 1. Foto IC für Fernsteuerung SFH 5110 SUMMARY OF TYPES (S PHOTODETECTORS, OPTICAL SENSORS) 1. Photo IC for Remote Control SFH 5410 SFH 5111 2. Fotodetektoren in SMT
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bpw 104fototransistor k 4110bpw 34 photo+6k 3505 transistortransistor 309bpw 14 aic 314bp 104 fasfoto transistor
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sil6400
Abstract: STS7500 s520 SSF4500 s7302
Contextual Info: Temic S e m i c « n il u c t o r s Genera] Information Alphanumeric Index T>pe . Type . BP 1 0 4 . . 6 .2 0 7 B P W 8 5 . . . . 320 T E M T 2 2 0 0 . . . 4 ,3 9 8 TSIP7601 . . . . B P V 1 0 . . 5 ,2 0 3
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bpv11bpv11ft4700ess5400+11tsha5201tsha5501tsha6201s4300tsus5201tsus5x12sil6400sts7500s520ssf4500s7302
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bpw 81 t
Abstract: SFH213 sfh 206 BP 104 FAS
Contextual Info: S i -F o t o d e t e k t o r e n S il ic o n P h o t o d e t e c t o r s T y p e n ü b e r s ic h t S ummary 1. 1. Foto IC für Fernsteuerung SFH 5110 2. SFH 5410 Fotodetektoren in SM T T ypes Photo IC for Remote Control SFH 5111 2. 2.1.SM T-Transistoren
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e9087sfh3410bpw 81 tsfh213+2sfh 206bp 104 fas
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10led 7 segment anode til 702trw 007 diodestddg 5250 m+7817 optrontelefunken transistoropto smd code marking nectddg 5250hoa 865diode pk in 54017segment sm 4150
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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photo diode tfk s 186 ptfms 4300ir diodes tfk s 186 ptfk bpw 41 n diode+6tfmt 4300tfmt 4300 ir detectorir diode tfk 186tfms 4300 nmobile receptor tfm 5380tfk s 186 p
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BPW89
Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Contextual Info: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area
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820nmbpv11850nmbpw89+9s284pbpw21bpw47bbpw98bpw84s213pbpw24r 810w47aa953
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near IR sensors with daylight filter
Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Contextual Info: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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w10mwnear ir sensors with daylight filterluxmeter osrambpw20+7photoconductive cells characteristicdc voltmeter circuit diagramsphotodiode application luxmeterbpw 23 nfapplication luxmetershort distance measurement ir infrared diodeluxmeter detector
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near IR sensors with daylight filter
Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Contextual Info: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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near ir sensors with daylight filternear ir photodiodes with daylight filterbpw 23 nftelefunken phototransistor+6photodiode application luxmetervishay telefunken phototransistorpin diodes radiation detectorapplication note bpw34photo voltaic cellbpw34 osram
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th 2167.1
Abstract: tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010
Contextual Info: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1
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stdl130th 2167.1tda 7244tda 3553+7tda 2010 circuittda 266tda 8895tda 8956tda 2222bpw 34 datasheettda 2010
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