BP108 Search Results
BP108 Price and Stock
TE Connectivity 4DB-P108-07CONN BARRIER STRIP 7CIRC 0.325" |
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4DB-P108-07 | Bulk | 5,782 | 1 |
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4DB-P108-07 | Bag | 22 Weeks, 3 Days | 3,840 |
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4DB-P108-07 | Each | 32 |
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4DB-P108-07 |
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4DB-P108-07 | 3,840 |
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TE Connectivity 4DB-P108-10CONN BARRIER STRP 10CIRC 0.325" |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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4DB-P108-10 | Bulk | 2,070 | 1 |
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4DB-P108-10 | Bulk | 1 |
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4DB-P108-10 | Each | 2,144 | 16 |
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4DB-P108-10 | 1,485 | 16 |
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4DB-P108-10 | 1,493 |
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4DB-P108-10 | 320 |
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TE Connectivity 4DB-P108-06CONN BARRIER STRIP 6CIRC 0.325" |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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4DB-P108-06 | Bulk | 1,535 | 1 |
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4DB-P108-06 | Bag | 24 Weeks, 6 Days | 5,120 |
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4DB-P108-06 | 2,629 |
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4DB-P108-06 | Each | 28,736 | 32 |
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4DB-P108-06 | 3,744 | 32 |
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4DB-P108-06 | 1,856 |
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4DB-P108-06 | 5,120 |
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4DB-P108-06 | 1,534 | 1 |
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TE Connectivity 4DB-P108-09CONN BARRIER STRIP 9CIRC 0.325" |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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4DB-P108-09 | Tray | 864 | 1 |
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4DB-P108-09 | Tray | 18 Weeks | 3,360 |
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4DB-P108-09 | 1,021 |
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4DB-P108-09 | Bulk | 3,360 |
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4DB-P108-09 | Each | 3,360 |
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4DB-P108-09 | 11 | 1 |
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4DB-P108-09 |
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4DB-P108-09 | 3,360 |
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4DB-P108-09 | 948 | 1 |
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Superworld Holdings Ptd Ltd PBP108060P885NM9.8 X 7.8 X 5.8, 0.085 UH 4 IN 1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PBP108060P885NM | Cut Tape | 450 | 1 |
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BP108 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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Hitachi DSA002710Contextual Info: HM5225645F-B60 HM5225325F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM ADE-203-1014B Z Preliminary Rev. 0.2 Apr. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word × 64-bit × 4-bank. The Hitachi |
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HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014B HM5225645F 256-Mbit 1048576-word Hitachi DSA002710 | |
HM5225325F-B60
Abstract: HM5225645F HM5225645F-B60
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HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word HM5225325F-B60 HM5225645F-B60 | |
IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
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P80i
Abstract: MN103SFE4K MN103SE4 MN103SE4k MN103s panasonic Matsua LED P37D 5G13 AN2A p91d
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MN103S MN103SE4D/E4G/E4K/FE4G/FE4K 232E4-010E P80i MN103SFE4K MN103SE4 MN103SE4k MN103s panasonic Matsua LED P37D 5G13 AN2A p91d | |
PT740 AB
Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
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March/2001 standard-856-8650 PT740 AB PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311 | |
NAF-0602
Abstract: WES-1334 MARKING CODE WM9 WD-26p WD-26P thomas and betts WCCP1-25S BP-0273 WC-125 D882 pm 75 WL185
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S-2205/Technical NAF-0602 WES-1334 MARKING CODE WM9 WD-26p WD-26P thomas and betts WCCP1-25S BP-0273 WC-125 D882 pm 75 WL185 | |
MN103s panasonic
Abstract: MN103SFA7K saturation instructions
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MN103S MN103SA7D/A7G 232A7-011E MN103s panasonic MN103SFA7K saturation instructions | |
mn103sfa7k
Abstract: transistor SMD a7g p36d MN103s panasonic MN103SfA7
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MN103S MN103SA7D/A7G 232A7-012E mn103sfa7k transistor SMD a7g p36d MN103s panasonic MN103SfA7 | |
13001 6D 331
Abstract: 13001 8D 331 13001 s 8d
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OCR Scan |
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PT740 AB
Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
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ADE-410-001J March/2002 PT740 AB 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 BP-108 EDR7315 QP4-064050-002-A | |
str f 6267
Abstract: SMD MOSFET DRIVE DATASHEET 4606 STR 6656 TRANSISTOR C 6090 8050 sot-23 STR 6267 str 6267 f scr ky 202 HALL SOT-23-4 mosfet 4800
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M0009-021506 str f 6267 SMD MOSFET DRIVE DATASHEET 4606 STR 6656 TRANSISTOR C 6090 8050 sot-23 STR 6267 str 6267 f scr ky 202 HALL SOT-23-4 mosfet 4800 | |
HM5225325F-B60
Abstract: HM5225645F HM5225645F-B60 Hitachi DSA00358
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HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word HM5225325F-B60 HM5225645F-B60 Hitachi DSA00358 | |
PC133 registered reference design
Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
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HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word PC133 registered reference design 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714 | |
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F199 transistor
Abstract: MN103Sfe3K MN103Sfe3K application MN103SE3 transistor SMD t07 3PHASEPWM MN103s panasonic Semicon volume 1
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MN103S MN103SE3K/FE3K 232E3-010E F199 transistor MN103Sfe3K MN103Sfe3K application MN103SE3 transistor SMD t07 3PHASEPWM MN103s panasonic Semicon volume 1 | |
HM5225645FBP-B60
Abstract: HM5225325F-B60 HM5225645F HM5225645F-B60 HM5225325FBP Hitachi DSA00190 hm52256
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HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADJ-203-540A HM5225645F HM5225325F 108-bump BP-108) HM5225645FBP-B60 HM5225325F-B60 HM5225645F-B60 HM5225325FBP Hitachi DSA00190 hm52256 | |
TRANSISTOR REPLACEMENT GUIDE d882
Abstract: transistor D1876 TRANSISTOR D412 7403-09FR d1876 transistor SIL-PAD 2000 density transistors D1876 SIL-PAD 3223 Sil Pad A2000 0.015 TR-NWT-000930
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Hitachi DSA00164Contextual Info: HM5212325F-B60 128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit × 4-bank PC/100 SDRAM ADE-203-1053A Z Rev. 1.0 Oct. 18, 1999 Description The Hitachi HM5212325F is a 128-Mbit SDRAM organized as 1048576-word × 32-bit × 4-bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 108 bump BGA. |
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HM5212325F-B60 32-bit PC/100 ADE-203-1053A HM5212325F 128-Mbit 1048576-word BP-108) Hitachi DSA00164 | |
HM5225645FBP-B60
Abstract: Hitachi DSA00164
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HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word HM5225645FBP-B60 Hitachi DSA00164 | |
Hitachi DSA00280Contextual Info: HM5251325C-75/A6/B6 512M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 32-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1245B Z Rev. 1.0 Nov. 16, 2001 Description The Hitachi HM5251325C is a 512-Mbit SDRAM organized as 4194304-word × 32-bit × 4-bank. All inputs |
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HM5251325C-75/A6/B6 Hz/100 32-bit PC/133, PC/100 ADE-203-1245B HM5251325C 512-Mbit 4194304-word Hitachi DSA00280 | |
BP-108
Abstract: TE 2161 HM5212325F-B60 HM5212325FBP-B60 Hitachi DSA00190
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HM5212325F-B60 32-bit PC/100 ADJ-203-541A BP-108) /64ms HM5212325FBP-B60* 108-bump BP-108 TE 2161 HM5212325F-B60 HM5212325FBP-B60 Hitachi DSA00190 | |
PT740 AB
Abstract: diode AE 84A KS74 FP64E hitachi FET EDR-7316 Hitachi DSAUTAZ006 IC51-2084-1052 OTS-48
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September/2000 PT740 AB diode AE 84A KS74 FP64E hitachi FET EDR-7316 Hitachi DSAUTAZ006 IC51-2084-1052 OTS-48 | |