SGS115
Abstract: MJE3311 ON632 BOW84 B0878 041K2 2SB750 87CI
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max (8) tf Max (8) TOper Max ee) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 BOX88 GT81 00 BOW84 BOW84 BOW84 MPS-A7S
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box88bow84mps-a76mpsa76+92sb8882sb977asgs115mje3311on632b0878041k22sb75087ci
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4520BN
Abstract: transistor SMD .v05 qml-38535 4518B 4520B CDFP4-F16
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M O -D A REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 8 PREPARED BY Rick C. Officer
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ul-103qml-385355962r9666901veccd4518bdmsr+115962r9666901vxccd4518bkmsr5962r9666902veccd4520bdmsr5962r9666902vxccd4520bkmsr4520bntransistor smd .v054518b4520bcdfp4-f16
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mj2955 TO-220
Abstract: 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110
Contextual Info: CRIMSON SEM IC ONDUC TO R INC d F | asm C H b 2514096 CRIMSON SEMICONDUCTOR 99D 00 33 4 INC D 7 EPITAXIAL BASE - TO -220 continued I ' j " NPN PNP TIP121 TIP122 TIP130 TIP131 TIP132 2N6121 2N6122 2N6123 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6486 2N6487
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o-2207--33l-etip121tip126+15tip122tip127tip130tip135tip131mj2955 to-2202n3055 to-220mj2955bdx54sbdx182n3055 to-34116-4bdw21bdx88bcrimson 5110
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bot64
Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091
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mje1091mje2090mje2091bow64a+11bow24a220abbot64b0698bow84b064sbow94abot622ns04box54a11j2
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pmd12k-40
Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
Contextual Info: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160
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2n30552n34422n37132n3714+102n37152n37162n37712n37722n37732n4913pmd12k-402n6543bu208lm3661tl-1.40
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BDX87B
Abstract: BDX87C
Contextual Info: BDX87B/87C BDX88B/88C SGS-THOMSON Kiœmii 2 ôl(£t COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX87C AND BDX88C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87B, and BDX87C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are
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bdx87b/87cbdx88b/88cbdx87cbdx88c+2bdx87bbdx88b
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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box54c
Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L
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b0262bb06822sb1098m2sb1098l+132sb1098k2sb12272sb885sgs127box54cbox34cb0336bow84cb06502sb1100kbow24c2sb10992sb897
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LM3661TL-1.40
Abstract: 2N6057
Contextual Info: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713
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