BDX88C Search Results

bdx87c-bdx88c

Abstract: BDX88C BDX87C
Contextual Info: BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power

bdx88c

Contextual Info: r z 7 SGS-THOMSON [*i EILg iri®KS BDX87C BDX88C COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3

BDX88C

Abstract: BDX87C
Contextual Info: SavantIC Semiconductor Product Specification BDX88C Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type BDX87C ·DARLINGTON APPLICATIONS ·Designed for use in power linear and switching application. PINNING See Fig.2 PIN DESCRIPTION

Contextual Info: BDX88C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BDX88C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BDX87C

Abstract: BDX87B bdx88c 87c 24
Contextual Info: BDX87B/87C BDX88B/88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n BDX87C AND BDX88C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87B, and BDX87C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are

BDX87C

Abstract: BDX88C
Contextual Info: SavantIC Semiconductor Product Specification BDX87C Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type BDX88C ·DARLINGTON APPLICATIONS ·Designed for use in power linear and switching application. PINNING See Fig.2 PIN DESCRIPTION

BDX87B

Abstract: BDX87C
Contextual Info: BDX87B/87C BDX88B/88C SGS-THOMSON Kiœmii 2 ôl(£t COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX87C AND BDX88C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87B, and BDX87C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are

Contextual Info: SGS-THOMSON BDX87C BDX88C RfflD0lsi i[LiCTI3®[i!lDS$ COMPLEMENTARY SILICON POWER _DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3

BDX88C

Contextual Info: BDX88C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: SGS-THOMSON MIMILIOTIlMCt BDX87B/87C BDX88B/88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX87C AND BDX88C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87B, and BDX87C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are

BDX86C

Abstract: BDX85C BDX86A BDX88B BDX88C 87 npn TO126
Contextual Info: POWER TRANSISTORS continued anc < > o ÜJ o o c E ID > U_ m <S > CM < X II u to E TO @ U O 1 in > B D X 85 B D X 86 BD X 8SA NPN PNP NPN 45 45 60 45 45 60 10 10 10 o 1— PACKAGE P O L A R IT Y (A )o a oA TYPE Epitaxial-base darlingtons for linear and switching a p p l i - M .»

MC7805CK

Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
Contextual Info: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

buw34

Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0

BUW67

Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
Contextual Info: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10

MC7808CK power regulator

Abstract: 7824 voltage regulator circuit diagram MC7805CK MC7812CK application notes MC7812CK MC7815CK PMD CAPACITOR lambda lj LM 7824 voltage regulator circuit diagram lm7805kc
Contextual Info: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510

LAS18U

Abstract: MC7805CK mc7815ck mc7812ck LAMBDA Voltage Regulator 7824 24V positive voltage regulator for MC7808CK power regulator 17K100 MC7915CK lm7805kc
Contextual Info: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

MC7805CK

Abstract: MC7824CK MC7812CK mc7815ck transistor lm320k lm7805kc MC7912CK MJ1000 application notes 17K100 MC7905CK
Contextual Info: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510

BDY90

Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15