BL72S Search Results

SMOS182

Contextual Info: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1

Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A- MARCH 1995 - REVISED JUNE 19BS Military Operating Temperature Range -55 °C to 125°C Performance Ranges: AC CESS AC CESS ACCESS ACCESS TIME TIME TIME TIME ROW COLUM N SER IAL SER IAL ADDRESS EN ABLE

TMS44460DJ

Contextual Info: TM124MBK36B, TM124MBK36R1048576 BY 36-BIT TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS137E-JANUARY 1991 -REVISEDJUNE 1995 Organization TM124MBK36B . . . 1 048 576 x 36 TM248NBK36B . . . 2 097 152 x 36 Single 5-V Power Supply ±10% Tolerance

SMJ55161

Abstract: SMJ55161-80
Contextual Info: SMJ55161 262144-WORD BY 16-BIT MULTIPORT VIDEO RAM SGMS056C - MAY 1995 - REVISED APRIL 1997 Organization: - DRAM: 262 144 W ords x 16 Bits - SAM: 256 Words x 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports

BH RU

Contextual Info: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS162A - FEBRUARY 1994 - REVISED JUNE 199S Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data

SN76489

Abstract: TMS9118 TMS9918 texas instruments sn76489 videotex TMS9228 S9228 tms4416 dram texas instruments Dynamic ram module Video TPU 27* teletext
Contextual Info: TEXAS INSTR -CUC/UP} 5S De | 0 ^ 1 7 2 5 0034^75 E T-S2-33-öS PRODUCT PREVIEW TMS9228/TMS9229 ADVANCED VIDEO DISPLAY PROCESSOR 1. INTRODUCTION The TMS9228/TMS9229 Advanced Video Display Processor AVDP is designed to control a raster-scan display and its video image which is stored in dynamic RAM. The AVDP is the latest generation in the popular Texas

zig bee

Abstract: TMS44400 TMS44400P
Contextual Info: • flSbl755 TEXAS INSTR 007^51 f l Sb B T I I S TMS44400, TMS44400P 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ASIC/MEMORY SMHS44ÛF-OCTOBER 1989-REVISED APRIL 1993 Organization . . . 1 048 576 x 4 DJ PACKAGET (TOP VIEW) Single 5-V Power Supply (±10% Tolerance)

tms4c1024

Abstract: TMS4C1024DJ
Contextual Info: fl1b].72S 007710G ^ • TM024HAC4 1,048,576 BY 4-BIT DYNAM IC RAM M ODULE — TEXAS INSTR • 1,048,576 x 4 Organization • Single 6-V Supply 10% Tolerance • 24-Pin Slngle-ln-llne Package (SIP) • Utilizes Four 1 Megabit Dynamic RAMs in Plastic Small-Outiine J-Lead (SOJ) Packages

Contextual Info: TIBPAL16L8-5C, TIBPAL16R4-5C, TIBPAL16R6-5C, TIBPAL16R8-5C TIBPAL16L8-7M, TIBPAL16R4-7M, TIBPAL16R6-7M, TIBPAL16R8-7M HIGH-PERFORMANCE IMPACT-X PAL CIRCUITS SRPS011D - 03359, OCTOBER 1989 - REVISED SEPTEMBER 1992 TIBPALKL8’ C SUFFIX . . . J OR N PACKAGE

20D17

Contextual Info: TMS416160A, TMS418160A TMS426160A, TMS426160AP, TMS428160A, TMS428160AP 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS891B - AUGUST 1996 - REVISED MARCH 1997 DGE PACKAGE TOP VIEW This data sheet is applicable to all TMS41x 160As and TMS42x160A/Ps symbolized by Revision ‘E ” and subsequent

ITI15 200

Abstract: tsc 7107 asa 15s 1 CODE C2FR TMS55165 C2FR c-asic tsc 7107 N tsc 7106
Contextual Info: bSE D m fl‘i b l 7 2 S TEXAS INSTR DDfl 0a7M 1 55 IT I I 5 '•L l i TMS55165 262144 BY 16-BIT MULTIPORT VIDEO RAM ASIC/MEMORY SMVS165B-^AUGUST 1992-REVISED JANUARY 1993 DRAM : 262 144 Words x 16 Bits SAM: 256 Words x 16 Bits Dual Port Accessibility —Simultaneous and

h 9245

Abstract: 27C128 Texas Instruments 27C128-15 27C128-17 27C128-20 27C128-25 27c128-120 27C128-30
Contextual Info: b2E D • ö^ b l T S S 0GÖ1275 ST3 ■ T I I S SMJ27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TEXAS INSTR ASIC/MEMORY S G M S 0 0 6 C -A U G U S T 19 8 6 -R E V IS E D FE BR UA RY 1993 Military Operating Temperature R a n g e .-5 5 °C to 125°C

TMS4C1024DJ

Abstract: tms4c1024d tm124mbk36q
Contextual Info: bSE t> actives m odsomt? TEXAS 021 b t i i s INSTR A S I C / M E M O R Y TM124MBK36, TM124MBK36Q 1 048 576 BY 36-BIT DYNAMIC RAM MODULE S M M S 1 36 A -J A N U A R Y 1993 * Organization . . . 1 048 576 x 36 * Single 5-V Power Supply * 72-pin Single In-Line Memory Module

ty 95 camping

Abstract: TPC1240
Contextual Info: TPC12 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS SRFS002C - D3963, DECEMBER 1991 - REVISED FEBRUARY 1993 Three Arrays With Increased Densities • Enhanced Architecture - Supports Single-Module Sequential Functions - Supports Wide-Input Combinatorial Functions

LTS 547 EH

Abstract: LTS 543 210HL SXM 08 43A1h lts 543 pin configuration AAIBB ACC20 lts 547 ar 719 C203
Contextual Info: Chapter 7 Assembly Language Instructions The 'C2xx instruction set supports numerically intensive signal-processing op­ erations as well as general-purpose applications such as multiprocessing and high-speed control. The ’C2xx instruction set is compatible the ’C2x instruction

SFH 910

Abstract: TMS55160 74TTL MAS 10 RCD TMS45160 TMS5S160-70
Contextual Info: bSE D • ÔTbl?25 TEXAS INSTR 00ÛGÔ2D TÔ4 TIIS TMS55160 262 144 BY 16-BIT MULTIPORT VIDEO RAM A S I C / M E H O R Y SMVS160B-AUGUST 1992-REVISED JANUARY 1993 DRAM : 262 144 Words x 16 Bits SAM: 256 Words x 16 Bits TRQ * Data Transfer Function From the DRAM to

TMS55161

Abstract: TMS55161-60 TMS55161-70 262144 x 16 Video RAM 55161-80 Video RAM
Contextual Info: TMS55161 262144 BY 16-BIT MULTIPORT VIDEO RAM S M V S 1 6 1 A -O C T O B E R 1 9 9 3 -R E V IS E D MAY 1994 Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256 Words x 16 Bits DGH PACKAGE {TOP VIEW Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

TPC 8127

Abstract: idq10 a11t SMJ416160 SMJ418160
Contextual Info: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP V IEW A C C ESS A C C ESS A C C ESS TIME TIME TIME '41x160-60 '41x160-70 '41x160-80 tRAC MAX 60 ns 70 ns 80 ns tCAC MAX 15 I)« 18 ns 20 ns