BL 369 Search Results

514400

Contextual Info: O K I Semiconductor MSM514400 B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynamic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the M SM 514400B/BL is OKI's CMOS silicon gate process technology.

20-PIN

Abstract: 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.

K100-ISO-50

Abstract: a772 A771 Jianghai B772 P 38 B641 A642 b772 p A362 A511
Contextual Info: CD 139 BL Series 9 000h at 105°C longer life CD 136 PK CD 139 BL 105°C 105°C longer life CD 135 BP CD 138 PC highest voltage CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +105 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)

RCA8350B

Abstract: RCA8350 30957 2N6053 2N612B 2N6054 RCA8350A TIP600 TIP601 TIP602
Contextual Info: INSTR -COPTÔ} 8961726 b2 TEXAS INSTR Ï Ë J a^bl?2h 0031^52 OPTO 62C 36952 D TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T T—33 —31 Designed For Complementary Use With TIP600, TIP601, TIP602 10 A Rated Collector Current

RCA8350B

Contextual Info: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602

LF-PB24P34F

Contextual Info: -fr JH Jlfc f r # BL & g] Ariose Electronics C o . , Ltd. 033 ^Sm^ai!S943#l#165S No.16,Alley, La ne 943,Chung Shan Rd .,Taoyua n,Taiwa n .(post code:330.) Phone:+886-3-379-5651 Fax:+886-3-369-9893 e-mail:ario@msl0.hinet.net web:http://www.ario.com.tw Part no. LF-PB24P34F (Pin Type!

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-C38H/G-41A-LG-DP-6F-AA-160-TBS22A SINCE 1981 ● Features: ●Package dimensions: 1. Chip material: GaP/GaP 2. Emitted color : Green 3.1 .122 3. Lens Appearance : Light Green Diffused 4. Designed for ease in circuit board assembly.

b774 transistor

Abstract: c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643
Contextual Info: CD 138 PC Series 10 000 h at 85°C CD 136 PK longer life CD 139 BL 105°C CD 135 BP 105°C longer life highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)

B772 P M 24

Abstract: D551 A642 CD 137 capacitor b774 transistor B772 P 38 A643 B641 A771 A361
Contextual Info: CD 137 PX Series 10 000 h at 85°C longer life CD 136 PK CD 139 BL 105°C 105°C longer life CD 135 BP highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 400 ~ 550 Capacitance Range (µF)

A771

Abstract: b774 equivalent A361 A362 A511 A641 A642 A643 B641 D551
Contextual Info: CD 135 BP Series 4 000h at 85°C longer life CD 136 PK • Standard at 85°C · High Ripple Current · Power Supplies & Inverters CD 139 BL 105°C 105°C longer life CD 135 BP CD 138 PC highest voltage Item CD 137 PX Characteristics Operating Temperature Range °C

A771

Abstract: A772 b774 transistor A361 A362 A511 A641 A642 A643 B641
Contextual Info: CD 136 PK Series 4 000h at 105°C longer life CD 136 PK • Standard at 105°C · Professional Power Supplies & Inverters CD 139 BL 105°C longer life CD 135 BP CD 138 PC highest voltage Item CD 137 PX Characteristics -40 ~ +105 Voltage Range V 25 ~ 100 -25 ~ +105

Contextual Info: DRAWING MADE T H I S DRAWING I S UNPUBLISHED. COPYRIGHT 19 4 7 IN THI RD ANGLE PROJECTION RELEASED FOR P U BL I C A TI O N BY AMP INCORPORATED. ALL LÛC ,19 AD INTERNATIONAL RIGHT5 RESERVED. DIS T 25 R EVISIO N S ZONE 6. 99 [. 275] D D SPACES AT [ 2. 1. 54

17105-3G

Abstract: AD4218
Contextual Info: DRAWING MADE T H I S DRAWING 7 IN THI RD ANGLE PROJECTION I S UNPUBLISHED. 6 RELEASED FOR P U BL I C A TI O N COPYRIGHT 19 BY AMP INCORPORATED. ALL 5 3 4 2 LOC ,19 AD INTERNATIONAL RIGHT5 RESERVED. 1 D IS T 25 R EVISIO N S ZONE LTR DES CRIPTIO N DATE ECN AD4218

Contextual Info: KM416C256B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION The S a m sun g K M 4 1 6 C 2 5 6 B /B IV B L L is a C M O S high • Performance range: tRAC tCAC tRC KM416C256B/BIVBLL-5 50ns 15ns 90ns KM416C256B/BI7BLL-6

MG15G1AL3

Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
Contextual Info: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15

MG30G2CL3

Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29
Contextual Info: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0

ba 663

Abstract: D1112 120k dynamic RAM
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This

25t65

Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
Contextual Info: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221

rj45 jack 8P8C

Abstract: 94VD RJ-45 jack RJ45 8P8C PCB JACK RJ45 8p8c RJ-45 jack color code T668 2 cat.5e j45 t668
Contextual Info: REVISIONS LTR DATE DESCRIPTION NEW RELEASE M odify ro u n d pin t o 0 3 /2 8 /2 0 0 3 0 9 /2 5 /2 0 0 6 ECN ND. F l a t pin. " 0505030” Perfbrmance: Meato CaL5e EI/VTIA568B.1 Standard. Materials: Plastic Body : FireproofABS UL-94VD RJ-45 Jack : 8P8C 50 micro Inches gold piatsd / Flat Pfei

Contextual Info: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function

48-PIN

Abstract: LH1537 LH155E LR3694 LR3696 sharp x-pression mq2 drive circuit P0707 MQ 6 pin diagram
Contextual Info: SHARP LR3694 Power Supply IC for PIT LCD System LR3694 PIN CONNECTIONS DESCRIPTION T h e L R 36 94 is a pow er supply 1C for driving an LCD system of personal information tools. 48-PIN TQFP It TOP VIEW consists of a C M O S charge pump type two times + I w w

Contextual Info: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function

2GB2

Contextual Info: White Electronic Designs W3EG64255S-JD3 ADVANCED* 2GB-256Mx64 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG64255S is a 256Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 256Mx4

8 pin rgb led

Abstract: M1351R
Contextual Info: TAIPEI : TEL : FAX : H.K. : TEL : FAX : 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. LED FLASH 單鍵 OR 兩鍵 ON/OFF , 暫停 三色燈 LED IC 1 OR 2 KEY ON/OFF & PAUSE RGB LED IC 886-2- 22783733 886-2- 22783633 852- 27569109 852- 27566961