BIPOLAR HJ Search Results

polysilicon resistor

Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107
Contextual Info: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device

plessey inductors

Abstract: polysilicon resistor High Speed Amplifiers DS00105
Contextual Info: HJB Complementary Bipolar Process Data Sheet DS00105 / June 2010 HJB is a double polysilicon trench isolated complementary bipolar process for RF applications in the range 900MHz to 2.4GHz. Key parameters minimum geometry device NPN PNP fT 19 GHz 15GHz CJC

TELEDYNE 321 nand

Abstract: 303AL HINIL 303 teledyne tH30 BUL 380 342CL HiNil 381 teledyne 333 HiNil HINIL 332
Contextual Info: TELEDYNE COMPONENTS 2ÛE D • â*îl7tiQH QQDS171 S m Bipolar Interface Logic ■■■■ Purpose of Bipolar Interface Logic T -Y 3 ~ 0 l PROTECTING CMOS AND *lP SYSTEMS Bipolar Interface Logic - the 300 Series - is a remarkably simple solution to interfacing

Bipolar HJ

Contextual Info: MITEL BIPOLAR HJ PROCESS HJ is a double-polysilicon trench isolated complementary bipolar process for RF application in the range 900MHz to 3.5GHz. NPN Cross Section Emitter Base P+ Collector P+ base DC epitaxy n- BN CS CS Substrate (p-) VPNP Cross Section

DS00107

Abstract: ic1a polysilicon resistor High Speed Amplifiers IC 1A
Contextual Info: HJW Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvebo > 4.5 V, suitable for very high linearity applications. Key parameters minimum geometry device

"Varactor Diodes"

Abstract: DS5230
Contextual Info: MITEL BIPOLAR HJ PROCESS HJ is a double-polysilicon trench isolated complementary bipolar process for RF application in the range 900MHz to 3.5GHz. NPN Cross Section Emitter Base P+ Collector P+ base DC epitaxy n- BN CS CS Substrate (p-) VPNP Cross Section

Bipolar HJ

Contextual Info: MITEL BIPOLAR TECHNOLOGY SUITE Mitel manufacture a range of high performance bipolar processes ranging from low cost diffused isolation processes to double-poly, trench isolated processes with fTs in the range 22 to 45GHz. HK* HJ HG WPC 45 30 22 7 BVCEO min

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

Contextual Info: TOSHIBA TB6512AF TOSHIBA Bi-CMOS INTEGRATED CIRCUIT MULTICHIP TB6512AF P W M CHOPPER TYPE BIPOLAR STEPPING M O T O R DRIVER The TB6512AF is PWM chopper type sinusoidal micro ste bipolar stepping motor driver. Sinusoidal micro step operation is accomplished only a

HN613256P

Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo­ ries is high speed but small capacity, instead, MOS

Contextual Info: MOTOROLA Order this document by MGW14N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 14N 60ED In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT Is co-packaged

Contextual Info: @ SPT SIGNAL PROCESSIN G TECHNOLOGIES SPT7871 10-BIT, 100 MSPSTTL A/D CONVERTER PRELIMINARY INFORMATION FEATURES APPLICATIONS • • • • • • • • • • • • • • 10-Bit, 100 MSPS Analog-to-Digital Converter Monolithic Bipolar Single-Ended Bipolar Analog Input

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching

Contextual Info: MOTOROLA Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GP15N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

ta8512af

Abstract: TA8512AF-5 RIA12 FIR31 TA85I2AF ta8512 H30P TA8512AF-7 MAGNETIC HEAD GV2 LE AND GV2 L
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA T A 8 5 12AF TOSHIBA BIPOLAR INTEGRATED CIRCUIT SILICON MONOLITHIC READ/WRITE IC For Floppy Disk Drive Unit in mm TA8512AF is a bipolar monolithic developed for R/W 1 8.2 ± 0 . 3 IC for 3~8 inch floppy disk drive.

Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY MBM100476RR-9 D ecem ber, 1988 Edition 1.0 4096-BIT BIPOLAR SELF-TlMED RANDOM ACCESS MEMORY The Fujitsu M BM 100476RR -9 Is fully decoded 4096-bit ECL self-tim ed read/w rite random access mem ory S T R A M . The device is organized as 1024 words by 4 bits,

fm radio using cd 1619 CP ic circuit diagram

Abstract: PNA7509P TDA1517 equivalent TDA1541A S1 PNA7518P tda7052 equivalent TDA1011 equivalent TEA5570 TEA5570 equivalent mesa
Contextual Info: RADIO, A U D IO AND ASSOCIATED SYSTEMS BIPOLAR, MOS Part a page Selection guide Functional in d e x . Numerical in d e x .

Contextual Info: International HjgRectifter PD - 9.693A IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

LS400

Abstract: bu931t
Contextual Info: Hji BU931T BUB931T SGS-THOMSON EfóDO E^@H[LO HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . SURFACE-MOUNTING D2PAK TO-263 POWER PACKAGE IN TUBE (NO SUFFIX)