BIPOLAR HJ Search Results

TELEDYNE 321 nand

Abstract: 303AL HINIL 303 teledyne tH30 BUL 380 342CL HiNil 381 teledyne 333 HiNil HINIL 332
Contextual Info: TELEDYNE COMPONENTS 2ÛE D • â*îl7tiQH QQDS171 S m Bipolar Interface Logic ■■■■ Purpose of Bipolar Interface Logic T -Y 3 ~ 0 l PROTECTING CMOS AND *lP SYSTEMS Bipolar Interface Logic - the 300 Series - is a remarkably simple solution to interfacing

Contextual Info: @ SPT SIGNAL PROCESSIN G TECHNOLOGIES SPT7871 10-BIT, 100 MSPSTTL A/D CONVERTER PRELIMINARY INFORMATION FEATURES APPLICATIONS • • • • • • • • • • • • • • 10-Bit, 100 MSPS Analog-to-Digital Converter Monolithic Bipolar Single-Ended Bipolar Analog Input

ta8512af

Abstract: TA8512AF-5 RIA12 FIR31 TA85I2AF ta8512 H30P TA8512AF-7 MAGNETIC HEAD GV2 LE AND GV2 L
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA T A 8 5 12AF TOSHIBA BIPOLAR INTEGRATED CIRCUIT SILICON MONOLITHIC READ/WRITE IC For Floppy Disk Drive Unit in mm TA8512AF is a bipolar monolithic developed for R/W 1 8.2 ± 0 . 3 IC for 3~8 inch floppy disk drive.

Contextual Info: International HjgRectifter PD - 9.693A IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

MBL8282

Abstract: MBL8283 8282 octal latch intel 8282 intel 8283 Latches 8282 MBL8088 MCS-48 MCS-80 MCS-85
Contextual Info: F U J IT S U A d va n c ed Products • MBL8282 MBL8283 November 1 986 Edition 4.0 Bipolar Octal Latch D e s c r ip tio n The MBL8282 and MBL8283 are 8 -b lt bipolar latches w ith 3slate o u tp u t buffers. They can be used to im plem ent latches, b uffers o r m ultiplexers. The MBL8283 inverts the in p u t data at

sc-0352

Abstract: pin diagram of ic 1496 LC 0809 ESM6045AF ESM6045AV NPN DARLINGTON POWER module isotop si272
Contextual Info: 30E G l J> m SCS-THOM SON HJCTlMOes QÜ3aMbfl T ESM6045AF ESM6045AV S 6 S-THOMSÔN NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE • VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS ■ EASY TO MOUNT

TA79L05

Abstract: TA79L12F TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L15F TA79L18F TA79L20F
Contextual Info: TOSHIBA TA79L05,06,08,09,10,12,15,18,20,24F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L24F 3-TERMINAL NEGATIVE VOLTAGE REGULATORS 5V, 6V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V

ESM4045AV

Abstract: C113 esm4045
Contextual Info: r z 7 S C S - T H O M ^ 7# S O N RilDei3 ILICTra©fflliei ESM 40 45A V NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,hJUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT • LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

200MHZ

Abstract: 2SB709A
Contextual Info: RECTRON 2SB709A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

ignition coil bu941

Abstract: BU941 BU941P BU941PFI BUB941PFI
Contextual Info: BU941/BU941P BU941PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE

BUV298CV

Contextual Info: r z 7 S G S - T H O M Ä 7# S O N B U V2 9 8 CV RfflOGIHimiCTMOSS NPN TRANSISTOR POWER MODULE ADVANCE DATA . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,hJUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

t50V

Contextual Info: TO SHIBA TD62008AP/F/A F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62008AP, TD62008F, TD62008AF 7CH DARLINGTON SINK DRIVER The TD62008AP/ F/AF are high-voltage, high-current darlington drivers comprised of seven NPN darlington pairs.

Contextual Info: International I f â R Rectifier PD 9.1467D IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: T O SH IB A TA79L05,06,08,09,10,12,15,18,20,24F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L24F 3-TERMINAL NEGATIVE VOLTAGE REGULATORS 5V, 6V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V

Contextual Info: PD 9.1469A International ICR Rectifier IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

STGP10N50A

Abstract: STGP10N50
Contextual Info: SGS-THOMSON STGP10N50A 1D=0 _ ISOLATED GATE BIPOLAR TRANSISTOR IGBT PRELIMINARY DATA . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . VERY LOW ON-VOLTAGE DROP V Ce (s a t ) . HIGH RELIABILITY LEVEL . HIGH CURRENT CAPABILITY . OFF LOSSES INCLUDE TAIL CURRENT

pn junction DIODE 1N4001

Abstract: 79m15 79MXX diode 1N4001 0.5A kia linear regulator KIA79MXX kl 04 diode kl 09 diode equivalent a79M15
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA79M05P/PI ~ KIA79M15P/PI BIPOLAR LINEAR INTEGRATED CIRCUIT THREE TERMINAL NEGATIVE VOLTAGE REGULATORS -5V, -8V, -12V, -15V. KIA79M X X Series of three-terminal regulators is available with fixed output voltages of -5V, -8V, -12V, and

Contextual Info: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD

bu941zp

Abstract: BU941Z BU941ZPFI BUB941ZPF
Contextual Info: BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 1 APPLICATIONS ■ HIGH RUGGEDNESS ELECTRONIC

LA9200N

Abstract: 7860K FMU 100 2611B K786 LC7860k LA9200NM LC7881 SF 9201 EN2611B
Contextual Info: IOrdering number: EN2611B Monolithic Linear 1C i SA\YOrF No. 2611B LA9200NM, LA9201M Analog Signal Processors for Compact Disc Players _ / OVERVIEW ~N,_ PINOUT The LA9200NM and LA9201M arc bipolar, analog signal processors for use in compact disc players. They

Contextual Info: PD 9.1467D International IO R Rectifier IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

JANTX 2N6340

Abstract: JANTX 2N6341 2N6338A 2N6277A 2N6274A 2N6275 2N6276 2N6322 2N6323 2N6326
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 Ic/ V c E min/max @ A/V DEVICE TYPE V ceo (sus) VOLTS Ic (max) AMPS 2N6032A 90 50 10-50@50/2.6 2N6033A 120 40 2N6274A 100 2N6275 hjT E @ VcE(Mt) @ Ic^B (V @ A/A) p * r D f T WATTS (MHz)