plessey inductors
Abstract: polysilicon resistor High Speed Amplifiers DS00105
Contextual Info: HJB Complementary Bipolar Process Data Sheet DS00105 / June 2010 HJB is a double polysilicon trench isolated complementary bipolar process for RF applications in the range 900MHz to 2.4GHz. Key parameters minimum geometry device NPN PNP fT 19 GHz 15GHz CJC
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DS-00105
Abstract: 2417J4A EIA-625
Contextual Info: Data Sheet, Rev. 1 August 2001 NetLight 2417J4A 1300 nm Laser Gigabit Transceiver • TTL signal-detect output ■ Low power dissipation ■ Single 3.3 V power supply ■ Raised ECL LVPECL logic data interfaces ■ ■ Operating temperature range: 0 °C to
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MT1570
Abstract: MT2170 Microtune mt2170 Microtune mt1570 DS-00105 AN-0001 CATV Amplifier Application microtune docsis 2.0 docsis "docsis 3.0"
Contextual Info: Product Brief MT1570 DOCSIS 3.0 Upstream Amplifier DESIGNED FOR DOCSIS 3.0 HIGH TRANSMIT POWER. Related Product Information: • Press Release • Related Products • Order Information • Cable Product Selector Guide AND DOCSIS 2.0 MODEMS REQUIRING DESCRIPTION
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EIA-625
Abstract: 2417J4A TA-TSY-000983 TR-NWT-000468
Contextual Info: Data Sheet January 2000 NetLight 2417J4A 1300 nm Laser Gigabit Transceiver • Transmitter disable input ■ Wide dynamic range receiver with InGaAs PIN photodetector ■ TTL signal-detect output ■ Low power dissipation ■ Single +3.3 V power supply
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