BGA23 Search Results

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: P-BGA2304-5050-1.00AZF Uniti nn Feb,2004

Contextual Info: BGA231L7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 3.0, 2011-04-20 RF & Protection Devices Edition 2011-04-20 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

SF-BGA238A-B-11

Contextual Info: D Package Code: BGA238A C 16.51mm [0.650"] See BGA pattern code to the right for actual pattern layout Y X 20.32mm [0.800"] Top View reference only 1.27mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"] B 1 Top View: Recommended PCB Layout

Contextual Info: BGA231L7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 3.0, 2011-04-20 RF & Protection Devices Edition 2011-04-20 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

nec 575

Abstract: 484-pin BGA NEC C 324 C jedec tray BGA 324-PIN tray datasheet bga JEDEC tray standard tray bga TRAY DIMENSIONS TRAY CONTAINER
Contextual Info: TRAY CONTAINER UNIT : mm 5x12=60 PPE 135°C MAX. 16.95 25.50 23.25 BGA23×23ESP NEC 102.0 A' 25.50 135.9 A 23.25 17.25 280.5 315.0 322.6 Section A – A' 23.25 (6.07) (6.35) 7.62 23.00 Applied Package Quantity (pcs) 324-pin Plastic BGA (23×23) 352-pin Plastic BGA (23×23)

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

SAMSUNG MCP

Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Contextual Info: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary

Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and

PB-BGA256J-Z-01

Abstract: SF-BGA256J-B-01 SF-BGA232A-B-01
Contextual Info: U.S. PATENT 6,351,392 78.64mm [3.096"] 2.54mmtyp. [0.100"] 19.23mm [0.757"] 50.8mm [2.000"] Top View 1 * This height variable depends on the screw position. * 2 9.97mm [0.393"] 12.6mm [0.496"] 6mm [0.236"] Side View For Probing BGA256J use SF-BGA256J-B-01

Bluetooth Jammer

Abstract: BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter
Contextual Info: B GA 23 1L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Applic atio n N ote A N 273 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es Edition 2011-09-16 Published by

BGA676

Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Contextual Info: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18

BA107

Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

Flash Memory SAMSUNG k5

Abstract: SAMSUNG MCP samsung k5 mcp ba43 ba4410 MCP Electronics Samsung K5 Samsung K5 BA6411 BA4210
Contextual Info: Preliminary MCP MEMORY K5A3x80YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

ba4410

Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
Contextual Info: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification

samsung k5 mcp

Abstract: SAMSUNG MCP A3240 Flash Memory SAMSUNG k5
Contextual Info: K5A3x40YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0

SAMSUNG MCP

Abstract: Flash Memory SAMSUNG k5 samsung K5 MCP A3280 A3380
Contextual Info: K5A3x80YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0

SAMSUNG MCP

Abstract: Flash Memory SAMSUNG k5 A3240 BA35 samsung K5 MCP ba4410
Contextual Info: K5A3x40YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0

BA17

Abstract: K8D3216UT K8D3216
Contextual Info: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package

BA114

Abstract: BA107 samsung ba92 BA122
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

48FBGA

Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
Contextual Info: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package