BA40 Search Results

BA4C

Abstract: AF200
Contextual Info: QUALITY RELIABILITY » ' - , ! ! ~ M mL • t , t K - ■ F M 'P l i « # 10.7M H z H B t t W (P h y s ic a l D im en sio ns) BA403 B A 4031,;. S IP 7 p in I: O If a 'Jn S ir j; F M ^ ^ IC - C T , « S (F e a tu re s ) 1. I M m t i i t f & r s i 'o 2. 5v )

BA401

Contextual Info: BA401 FM/I FT7>7 KMhnf QUALITY-RELIABILITY B A 40i:.iU F M ' W i i l l « 10.7M H z W M * fll< 1f f t T fM^+aia T V *f f!?ifttoj (P h y s ic a l D im ensions) S IP 5 p in (Z W M fc •->n c L ' rJ. l l o N BA401 •S Mr ■» (Fe a tu re s ) 1. fc-lfrJC t;

Contextual Info: BLOCK TYPE AVALANCHE AUTOMOTIVE RECTIFIER BA40M AVALANCHE VOLTAGE 37 to 41 Volts CURRENT 40 Amperes Technical Specifecation: BA 24.0± 0.5 Features: 13.5± 0.3 High power capability Economical Avalanche Voltage: 37V to 41V Glass passivated chip • 8.5± 0.3

BA401

Abstract: FM if amplifier 24-IS
Contextual Info: FM IF Amplifier 7 ~ ^ BA401 Dimensions (Unit: mm The BA401 is a monolithic integrated circuit consisting of a single-stage differential amplifier usable as an FM IF amplifier or TV sound amplifier. It can be used as an FM IF limiter circuit as well and provides excellent characteristics. It

ba40 rectifier

Abstract: ba40 DSA0024026
Contextual Info: BLOCK TYPE AVALANCHE AUTOMOTIVE RECTIFIER BA40Z AVALANCHE VOLTAGE 24 to 32 Volts CURRENT 40 Amperes Technical Specifecation: BA 24.0± 0.5 Features: 13.5± 0.3 High power capability Economical Avalanche Voltage: 24V to 32V Glass passivated chip • 8.5± 0.3

Contextual Info: BLOCK TYPE AVALANCHE AUTOMOTIVE RECTIFIER BA40L AVALANCHE VOLTAGE 20 to 24 Volts CURRENT 40 Amperes Technical Specifecation: BA 24.0± 0.5 Features: 13.5± 0.3 High power capability Economical Avalanche Voltage: 20V to 24V Glass passivated chip • 8.5± 0.3

Contextual Info: ROHM CORP 0?E D | TflEfl'i'H ODGab?G 1 | FM IF Amplifier BA401 Dimensions Unit: mm 2.«#' 1 The BA401 is a monolithic integrated circuit consisting of a single-stage differential amplifier usable as an FM IF amplifier or TV sound amplifier. It can be used as an FM IF limiter circuit as well

BA401

Abstract: I910 sound amplifier
Contextual Info: ROHM CORP 0?E D | TflEfl'i'H ODGab?G 1 | FM IF Amplifier BA401 Dimensions Unit: mm 2.«#' 1 The BA401 is a monolithic integrated circuit consisting of a single-stage differential amplifier usable as an FM IF amplifier or TV sound amplifier. It can be used as an FM IF limiter circuit as well

BA402

Abstract: BA-402
Contextual Info: ROHM CORP D7E D I 7 6 B 5 W 00051,73 M | RQHm FM IF Amplifier BA402 T-74-11-01 Dimensions Unit: mm 2.a: RF and IF A m plifiers I The BA402 is a monolithic integrated circuit having a 3-stage differential amplifier used for FM IF amplification and TV sound amplification. The third

BA1310

Abstract: BA403 2SC1739 ba1310 fm pll BA401 "FM receiver"
Contextual Info: FM/IF amplifier BA403 The BA403 1C is an FM detector and intermediate frequency IF (10.7 MHz) amplifier. The amplifier is a 3-stage differential amplifier with a peak detector. Dimensions (Units : mm) BA403 (SIP7) I6 .8 ± 0 .2 r The BA403 also includes an FM receiver,

BA1310

Abstract: BA403 2SC1739 ba1310 fm pll
Contextual Info: BA403 BA403 F M /IF T > 7 ° F M /IF a m p lifie r K JÜ a »í'l- íf í'Ü il* ] / Dimensions Unit : mm f BA403«. 7 7 l / > v t £ S I P 7 P i n L tz ^ e / ') v 'y i'i C T - T o s b c s -t s 1C n 7 v i j: -5 -to L fc K fF ir L S fc , ^ - h f o lE B L ^ T i. 't iV S e B t & '- o T i'

ba40 bridge

Abstract: BA40
Contextual Info: BA40-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25

BA1310

Abstract: BA403 BA401 2SC1739 FM receiver CIRCUIT DIAGRAM without ic HYBRID-IC fm stereo transmitter 10.7 MHZ phase detector 500 khz UCL-200
Contextual Info: FM/IF amplifier BA403 The BA403 1C is an FM detector and intermediate frequency IF (10.7 MHz) amplifier. The amplifier is a 3-stage differential amplifier with a peak detector. Dimensions (Units: mm) BA403 (SIP7) 2.6+0.2 r The BA403 also includes an FM receiver,

BA1204

Abstract: BA6414FS Motor Drivers BA6414FP-Y BU4052BCF BA6296FP BA-4114 ba4110 ba8206 "Motor Drivers"
Contextual Info: Index Index BA series: 3-digit numbers BA178M BA225 BA225F BA226 BA226F BA328 BA328F BA335 BA336 BA338 BA338L BA343 BA403 BA526 BA527 BA534 BA546 BA612 BA618 BA664 BA681A BA682A BA689 BA695 BA728 BA728F BA728N BA823 BA823F BA829 BA1604 BA1604F BA1701 BA3118L

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

AMP PBT connector 7 way

Abstract: EN3155 Cross Reference en3155 m39029 BOEING bacc63 D38999 series I II MS27615-KXXBXX MS27295 MS24254-16P aecma en3155 L-2119-E
Contextual Info: Amphenol 2010 Amphenol 12-C3 Circular Interconnects Products for Military, Aerospace and Harsh Environments Circular Interconnects • Aluminum • Stainless Steel/Firewall • Composite • Printed Circuit Board Connectors • High Speed Connectors • EMI Filter/Transient

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

AG29

Abstract: ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22
Contextual Info: ispLever CORE TM QDRII+ SRAM Controller MACO Core User’s Guide June 2008 ipug45_01.5 QDRII+ SRAM Controller MACO Core User’s Guide Lattice Semiconductor Introduction Lattice’s QDRII and QDRII+ QDRII/II+ SRAM Controller MACO core assists the FPGA designer’s efforts by

Contextual Info: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

SAMSUNG MCP

Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Contextual Info: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary

Contextual Info: Pin Information for the Stratix V 5SGXBB Device Version 1.0 Note 1 Bank Number GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4

intel g41 crb

Abstract: AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42 schematic intel g41 g31 crb socket am3 pinout g41 crb MOSFET BA7 intel G41 MOTHERBOARD crb LGA1366 ISL6334EVAL1Z
Contextual Info: Technical Brief 486 ISL6334EVAL1Z User Guide Board Specifications 1. Intel VR11.1 compliant. 2. 4-Phase, 130W, 400kHz, Load Line = 0.8mΩ. 3. Socket: LGA1366, die sensing, can be configured for motherboard sensing. 4. 6 Layer Board: Top/Bottom - 0.5oz plated, 1.5oz