BGA 6X8 PACKAGE Search Results

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

PF38F4050L0YBQ0

Abstract: R2528 PF38F4050 RD48F4400 RD48F4400L0 Intel SCSP GE28F256K18C PF48F4400L NP378 PF48F4400L0
Contextual Info: Listing of Tools US Home | Intel Worldwide Where to Buy | Training & Events | Contact Us | About Intel Search Developer site Enter keywords Electronic Tools Catalog: Intel Flash Memory Components Intel® Flash Memory Programmer Intel Corp. FPG Architecture: Flash Memory Components

LP62S1664CU-55LLTF

Abstract: LP62S1664CV-70LLTF LP62S1664C lp62s1664cv-70llif
Contextual Info: LP62S1664C Series 64K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue February 19, 2002 Preliminary 1.0 Final version release July 16, 2003 Final 1.1 Add Pb-Free package type

MX29GL256

Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes

Etron Technology

Abstract: EM562166BC-55 EM562166BC-70
Contextual Info: EtronTech EM562166 128K x 16 Low Power SRAM Rev 1.5 04/2007 48-Ball BGA CSP , Top View Features • Single power supply voltage of 2.7V to 3.6V • Power down features using CE • Low operating current : 30mA(max for 55 ns) • Maximum Standby current : 35µA at 3.6 V

led matrix circuits

Abstract: bga48 48-pin
Contextual Info: BALL GRID ARRAY PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 48 PIN PLASTIC To Top / Package Lineup / Package Index BGA-48P-M06 48-pin plastic BGA Lead pitch 1.0 mm Pin matrix 6x8 Sealing method Plastic mold BGA-48P-M06 48-pin plastic BGA (BGA-48P-M06) Note: The actual shape of coners may differ from the dimension.

WSON 6x8 socket

Abstract: LEAPER-48 LP48-WSON8-5 ae001 leaper vQFP 128 pin Socket LP48-TSOP-56M-R bga TSOP 48 socket tSSOP 56 socket LP48-SDIP-42PIN
Contextual Info: 6F-4, N0. 4, Lane 609, Sec. 5, Chung Hsin Rd., San Chung City, Taipei Hsien, Taiwan, R. O. C. http: //www.leap.com.tw E-mail: service@leap.com.tw Tel: 886-2-2999-1860 Fax:886-2-2999-9873 Adaptor/Converter Price List PLCC PACKAGE Item No. Model Description

S25FL129

Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,

Contextual Info: 512K x 8 Static RAM MSM8512CB - 015/020 Issue 1.0 July 2001 Description The MSM8512CB is a 512K x 8 SRAM monolithic device available in Chip Size BGA Ball Grid Array package, with access times of 15 and 20ns. The device is available to commercial and industrial

MSM8200

Contextual Info: Issue 1.0 March 2002 Description The MSM82000CB is a 2M x 8 SRAM device available in Chip Size BGA Ball Grid Array package, with access times of 15 and 20ns. The device is available to commercial and industrial temperature grades. The Chip Size BGA provides an ultra high density

NE29

Contextual Info: 512K x 8 Static RAM MSM8512CB - 015/020 Issue 1.0 July 2001 Description The MSM8512CB is a 512K x 8 SRAM monolithic device available in Chip Size BGA Ball Grid Array package, with access times of 15 and 20ns. The device is available to commercial and industrial

29IO1

Abstract: A62S6308 bga 6x8 Package bga 6x8
Contextual Info: A62S6308 Series 64K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 1.0 Initial issue September 01, 1997 Preliminary 1.1 Modify TSOP TSSOP pin configuration. January 16, 1998

Etron Technology

Abstract: EM564161 EM564161BC-70 EM564161BC-85
Contextual Info: EtronTech EM564161 256K x 16 Low Power SRAM Features Pin Configuration • Single power supply voltage of 3.0V to 3.6V • Power down features using CE1# and CE2 48-Ball BGA Top View • Low power dissipation • Data retention supply voltage: 1.5V to 3.6V

A62S6316

Contextual Info: A62S6316 Series 64K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue October 8, 1998 Preliminary 0.1 Change access times from 70/100 ns to 55/70 ns max. February 12, 1999

bga 6x8

Abstract: A62S6316
Contextual Info: A62S6316 Series 64K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue October 8, 1998 0.1 Change access times from 70/100 ns to 55/70 ns max.

A62S6316

Contextual Info: A62S6316 Series Preliminary 64K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue October 8, 1998 0.1 Change access times from 70/100 ns to 55/70 ns max.

A62S7316

Contextual Info: A62S7316 Series Preliminary 128K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 128K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 24, 1999 0.1 Modify VCCmax from 3.3V to 3.6V December 20, 2000

A62S7316

Contextual Info: A62S7316 Series Preliminary 128K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 128K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue November 24, 1999 Preliminary 0.1 Modify VCCmax from 3.3V to 3.6V December 20, 2000

TAHC

Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY

A64S9316

Abstract: A64S9316G-70
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

A64E16161

Abstract: A64E16161G bga 6x8
Contextual Info: A64E16161 2M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 8M,16M,24M,32M Partial Array Refresh (8M,16M,24M) Deep Power Down Mode

bga 6x8

Abstract: A62S8316
Contextual Info: A62S8316 Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 12, 2001 Preliminary February, 2001, Version 0.0

bga 6x8

Abstract: bga 6x8 Package A64E06161 A64E06161G
Contextual Info: A64E06161 1M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 4M,8M,12M,16M Partial Array Refresh (4M,8M,12M) Deep Power Down Mode