BFS20 Search Results

Contextual Info: IC SMD Type Product specification KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 0.55 Low voltage (max. 20 V) 2 Very low feedback capacitance (typ. 350 fF). +0.1 0.95-0.1 +0.1 1.9-0.1

100MHZ

Abstract: BFS20
Contextual Info: RECTRON BFS20 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.025 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

marking g1

Abstract: G1 marking sot23 mark G1 SOT-23 sot-23 Marking G1 G1 SOT-23 BFS20 marking G1 02 MARKING G1 SOT23 marking G1 sot-23
Contextual Info: SEMICONDUCTOR BFS20 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G1 No. 1 Item Marking Device Mark G1 BFS20 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

2108 npn transistor

Abstract: 359 marking sot23 bfs20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS20 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 08 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BFS20 TRANSISTOR NPN SOT–23 FEATURES  Very Low Feedback Capacitance  Low Current  Low Voltage APPLICATIONS  IF and VHF Applications in Thick and Thin-Film Circuits

bfs20

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS

Contextual Info: SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA E PIT A X IA L PLANAR NPN T R A N SIST O R H IG H F R E Q U E N C Y A P P L I C A T I O N . V H F B A N D A M P L IF IE R A PPLICA TIO N . DIM M A X I M U M R A T I N G T a= 2 5 °C M IL L IM E T E R S A 2.93 ±0.20

BFS200-12

Abstract: BFS200-20 BFS200-24 BFS200-48
Contextual Info: BFS200 Features: Open frame Fully isolated output Input/output isolation: 1500 VAC Warranty – 5 years Environmental o o Operating temperature….0 C to 40 C o o Storage temperature……-55 C to 85 C EMI Meets FCC class B, CISPR 22 class B Safety UL recognized

transistor marking MH

Contextual Info: BFS20 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistor in a m icrominiature plastic package. It has a very low feedback capacitance and is intended fo r i.f. and v.h.f. applications in thick and thin-film circuits. QUICK REFERENCE D ATA

Contextual Info: BFS20 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)25m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.40 h(FE) Max. Current gain.85Â

transistor bc 7-40

Abstract: sot marking code G4 sot-23 MARKING CODE GS 5 silicon npn planar rf transistor sot 143 marking t12 sot-23 marking code 721 telefunken bfs20 telefunken transistor transistor bc 237 npn DQDS311
Contextual Info: TELEFUNKEN ELECTRONIC aie D a^EQDSb DQDS311 *1 W È M G G Marked with: NA TTHtLitFiyJKlKilKl electronic Marked with: G4 Creative Tèchnotogies BFS20 BFS 20 R Silicon NPN Epitaxial Planar RF Transistor Applications: General in RF range In thick and thin film circuits

A12 marking

Abstract: FMMT-A92R A92 at device marking code S4 Diode marking m7 marking 7E Marking H2 transistor dg sot-23 FMMT-A42 FMMT-A43
Contextual Info: 4 FERRANTI semiconductors FMMT-A92 FMMT-A93 PNP S ilico n Planar High V o lta g e T ra n sis to rs G ENER AL D E S C R IP T IO N These plastic encapsulated, general purpose transistors are designed fo r applications requiring high b re a k d o w n voltages,

A14 marking SOT

Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
Contextual Info: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices

marking of m7 diodes

Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
Contextual Info: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices

FMMT3906

Abstract: FMMT3904 equivalent FMMT3905 BCV72 BCW29 BFQ31 BFQ31A BFS20 FMMT3903 FMMT3904
Contextual Info: FERRANTI semiconductors FMMT3903 FMMT3904 NPN Silicon Planar General Purpose Sw itching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

TRANSISTOR A70

Abstract: marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70
Contextual Info: 4 FERRANTI semiconductors F M M T -A 70 PNP S ilicon Planar Sm all Signal T ransistor D E S C R IP T IO N T h is device is intended for sm all and m e diu m sign a l a m plification a p p lica tio n s from d.c. to radio frequencies. E ncapsu late d in the p opu lar SO T-23 p a c k a g e the device is

FMMT-A42R

Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
Contextual Info: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.

sot-23 MARKING CODE ZA

Abstract: marking code AD B557 BSS79C BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A
Contextual Info: i FERRANTI T II semiconductorsL BSS79B, C NPN Silicon Planar General P urpose S w itc h in g T ra n sistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n ap plication s fro m d.c. to radio frequencies. Encapsulated in the popular SOT-123 package the device is

SOT 213

Abstract: SOT213 bk sot 23 marking ferranti Ferranti transistor marking 952 BCV72 BCW29 BCW30 BFQ31
Contextual Info: IJFERRANTI T IIsemiconductors ^ FMMT4124 N P N S ilico n Planar General Pu rp o se S w itc h in g T ransisto r DESCRIPTION This device is intended for use in small and medium signal amplification applications from d.c. to radio requencies. Encapsulated in the popular SOT-23 package the device is

sd marking bh

Abstract: BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT2484 Ferranti Semiconductors npn 1b
Contextual Info: FMMT2484 CHARACTERISTICS at Tj = 25°C unless otherw ise stated . Collector-base breakdown voltage V(BR)CBO 60 - V lc = 10MA Collector-em itter breakdown voltage V(BR)CEO 60 - V lc = 10m A Emitter-base breakdow n voltage 'A bfuebo 6 - V lE = 1 0 MA Collector cut-off current

BCW29R

Abstract: BCW30R SOT213 BCV72 BCW29 BCW30 BFQ31 BFQ31A ferranti SOT MARKING 213
Contextual Info: FERRANTI semiconductors BCW29 BCW30 PNP S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SOT-23 package these devices are designed sp e cifica lly fo r use in thin and th ick film

BSS66

Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
Contextual Info: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these

IP4223CZ6

Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
Contextual Info: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122