BFS 11 Search Results

TRANSISTORE

Abstract: BFS18 BFS19 Q62702 Q62702-F349
Contextual Info: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender­

Contextual Info: BFS-15W02 Intel Atom Processor D2550 15.6’’ Smart Touch Computer BFS-15W02-S BFS-15W02-V Features Intel new generation CPU - Cedar View D2550 15.6’’ 16:9 Color Active Matrix TFT flat panel display with LED backlight Easy to clean, full-flat touch panel

BFS17A

Abstract: BFS17AR marking E2
Contextual Info: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain

1607B

Abstract: B69640 B696 BFS 65 B412 BBY51 U2730B-BFS U2730B-BFSG1 dab Receiver b69640g
Contextual Info: U2730B-BFS L-Band Down-Converter for DAB Receivers Description The U2730B-BFS is a monolithic integrated L-band down-converter circuit fabricated in Atmel Wireless & Microcontrollers’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

RF mixer L-Band

Abstract: Receivers
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ DIP16 S024 SS° 20 ^ 1 1 • SS028 — Digital Audio Broadcasting DAB Chip Set U 2754B-BFS L>band PLL for DAB receivers PLL for L-band down-converters. four selectable divide factors U 2755B-BFS L-band mixer for DAB receivers

BFS480

Abstract: Q62702-F1531 GG24
Contextual Info: BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package

64-65-BFF/64-65-BFS

Contextual Info: Fused Filtered Power Entry Modules Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available Fuse holder provides effective EMI suppression

BFS480

Contextual Info: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package

Contextual Info: CLD-CT943.000 PRODUCT FAMILY DATA SHEET Cree Screen Master® 5-mm Oval LED C566C-RFS/GFS/BFS/AFS C566C-RFN/GFN/BFN/AFN PRODUCT DESCRIPTION FEATURES APPLICATIONS The oval LED is specifically designed • Size mm : 5 • • Color and Typical Dominant Wavelength:

transistor marking RHs

Contextual Info: SIEMENS BFS 483 NPN Silicon RF Transistor « For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA » f i = 8GHz F = 1.2dB at 900MHz •Two galvanic internal isolated Transistors in one package n Fi I R Li 111 □ ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Tem ic U2754B-B S e m i c o n d u c t o r s Frequency Synthesizer for DAB L-Band Down-Converter Description The U2754B-BFS is a monolithic integrated frequencysynthesizer-circuit fabricated with TEMIC’s advanced UHF5S technology. It controls a VCO to synthesize a

Contextual Info: 98-286 for datasheet10.pdf 7/24/98 9:03 AM Page 1 Black neg. PMS 301 neg. Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available

11105 IC

Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Contextual Info: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code

telefunken M10

Abstract: U2784B U2784B-BFS MIL-STD 833 test method 3015 RFT Semiconductors
Contextual Info: U2784B-BFS TELEFUNKEN Semiconductors 2200 MHz / 200 MHz Twin PLL Description U2784B is a low power twin PLL manufactured with TELEFUNKEN’s advanced UHF process. The maximum operating frequency is 2200 MHz and 200 MHz respec tively. It features a wide supply voltage range from 2.7 to

BFS480

Abstract: VPS05604
Contextual Info: BFS 480 NPN Silicon RF Transistor 4
For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
f T = 7 GHz F = 1.5 dB at 900 MHz 2 3 1
Two (galvanic) internal isolated VPS05604

Contextual Info: Cree 5mm Oval LED C566C-RFS/GFS/BFS/AFS C566C-RFN/GFN/BFN/AFN This oval LED is speciically designed for variable-message signs and passenger-information signs. The oval-shaped radiation pattern and high luminous intensity ensure that these devices are excellent for wide-ieldof-view outdoor applications where a wide viewing angle and readability in

k 319

Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
Contextual Info: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar

Contextual Info: R E V IS IO N UNLE55 OTHERWISE NOTED IN -P R O C E S S 1 AZ ONE PLACE DECIMALS ± .1 ^ [ 2 . 5 ] THREE PLACE DECIMALS ± .0 0 5 [.1 3 ] TWO PLACE DECIMALS ± .010 [.25] FOUR PLACE DECIMALS ± NO. OF POSITIONS x ,07874 ±;BfS- 1 (SEE TABLE 2 ) . I

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

TRANSISTOR K 314

Abstract: antenne
Contextual Info: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­

Chilisin Electronics

Abstract: B246 B-B246
Contextual Info: EMI Cores / FS Type CHILISIN ELECTRONICS CORP. EMI Cores / FS Type Product Identification B FS 38.1 x 11.9 x 12.1 C Dim. B Dim. A Dim. Core Type Material Material: B, B246 Shapes Dimensions and Electrical Characteristics FIG. 1 E C Fig D A Typical Impedance

SV1AC material

Abstract: imi 6050 SN05N BFS3565 T314 P4V1 SN20 SN-20
Contextual Info: IMI Seal file rs FatefMerf Features • Simple to handle and inexpensive in price. • Available in various configurations to conform to the wiring materials in use and the characteristics as required. • Absorbs noise effectively because of the impedance over 30 Q in high frequency band

MP4651

Abstract: mp46
Contextual Info: MP4651 Off Line LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP4651 is a high performance off-line LED driver designed for powering the LEDs especially for high power isolated application. • • • • • • • • • The MP4651 utilizes fixed operating frequency