BFS 11 Search Results

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Abstract: BFS18 BFS19 Q62702 Q62702-F349
Contextual Info: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender­

Contextual Info: BFS-15W02 Intel Atom Processor D2550 15.6’’ Smart Touch Computer BFS-15W02-S BFS-15W02-V Features Intel new generation CPU - Cedar View D2550 15.6’’ 16:9 Color Active Matrix TFT flat panel display with LED backlight Easy to clean, full-flat touch panel

BFS17A

Abstract: BFS17AR marking E2
Contextual Info: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain

1607B

Abstract: B69640 B696 BFS 65 B412 BBY51 U2730B-BFS U2730B-BFSG1 dab Receiver b69640g
Contextual Info: U2730B-BFS L-Band Down-Converter for DAB Receivers Description The U2730B-BFS is a monolithic integrated L-band down-converter circuit fabricated in Atmel Wireless & Microcontrollers’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

Contextual Info: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor

RF mixer L-Band

Abstract: Receivers
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ DIP16 S024 SS° 20 ^ 1 1 • SS028 — Digital Audio Broadcasting DAB Chip Set U 2754B-BFS L>band PLL for DAB receivers PLL for L-band down-converters. four selectable divide factors U 2755B-BFS L-band mixer for DAB receivers

Contextual Info: CLD-CT868.002 PRODUCT FAMILY DATA SHEET Cree P4 LED CP41B-BFS CP41B-GFS PRODUCT DESCRIPTION FEATURES APPLICATIONS This revolutionary package design • Size mm : 7.6 x 7.6 • Channel Letter • Color and Typical Dominant Wavelength: Blue (470nm) Green(527nm)

Contextual Info: CLD-CT868.002 PRODUCT FAMILY DATA SHEET Cree P4 LED CP41B-BFS CP41B-GFS PRODUCT DESCRIPTION FEATURES APPLICATIONS This revolutionary package design • Size mm : 7.6 x 7.6 • Channel Letter • Color and Typical Dominant Wavelength: Blue (470nm) Green(527nm)

BFS480

Abstract: Q62702-F1531 GG24
Contextual Info: BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package

64-65-BFF/64-65-BFS

Contextual Info: Fused Filtered Power Entry Modules Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available Fuse holder provides effective EMI suppression

Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated

BFS480

Contextual Info: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package

Contextual Info: CLD-CT943.000 PRODUCT FAMILY DATA SHEET Cree Screen Master® 5-mm Oval LED C566C-RFS/GFS/BFS/AFS C566C-RFN/GFN/BFN/AFN PRODUCT DESCRIPTION FEATURES APPLICATIONS The oval LED is specifically designed • Size mm : 5 • • Color and Typical Dominant Wavelength:

transistor bc 7-40

Abstract: sot marking code G4 sot-23 MARKING CODE GS 5 silicon npn planar rf transistor sot 143 marking t12 sot-23 marking code 721 telefunken bfs20 telefunken transistor transistor bc 237 npn DQDS311
Contextual Info: TELEFUNKEN ELECTRONIC aie D a^EQDSb DQDS311 *1 W È M G G Marked with: NA TTHtLitFiyJKlKilKl electronic Marked with: G4 Creative Tèchnotogies BFS20 BFS 20 R Silicon NPN Epitaxial Planar RF Transistor Applications: General in RF range In thick and thin film circuits

Contextual Info: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C

transistor marking RHs

Contextual Info: SIEMENS BFS 483 NPN Silicon RF Transistor « For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA » f i = 8GHz F = 1.2dB at 900MHz •Two galvanic internal isolated Transistors in one package n Fi I R Li 111 □ ESP: Electrostatic discharge sensitive device, observe handling precaution!

cree led

Abstract: CP41B-BFS CP41B-GFS-CM0N0674
Contextual Info: Cree P4 LED CP41B-BFS/GFS Data Sheet This revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions. This is possible through the efficient optical package design and high

Contextual Info: Tem ic U2754B-B S e m i c o n d u c t o r s Frequency Synthesizer for DAB L-Band Down-Converter Description The U2754B-BFS is a monolithic integrated frequencysynthesizer-circuit fabricated with TEMIC’s advanced UHF5S technology. It controls a VCO to synthesize a

Contextual Info: 98-286 for datasheet10.pdf 7/24/98 9:03 AM Page 1 Black neg. PMS 301 neg. Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available

11105 IC

Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Contextual Info: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code

D 13007 K

Abstract: transistor 13007 13007* transistor U2754B-B 13007 applications 13007 datasheet D 13007 BC846B SSO20 U2754B-BFS
Contextual Info: U2754B-B Frequency Synthesizer for DAB L-Band Down-Converter Description The U2754B-BFS is a monolithic integrated frequencysynthesizer-circuit fabricated with TEMIC’s advanced UHF5S technology. It controls a VCO to synthesize a frequency in the range of 100 MHz to 1500 MHz by a

BFS17

Abstract: Q62702 BFS17MA
Contextual Info: BFS 17 IM PN-Silizium -Planar-HF-Transistor B FS 17 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 23 A3 DIN 41 869 SO T-23 für den Einsatz in Schichtschaltungen bis in den GHz-Bereich. Kennzeichnung des Transistors: durch Stempelung MA

telefunken M10

Abstract: U2784B U2784B-BFS MIL-STD 833 test method 3015 RFT Semiconductors
Contextual Info: U2784B-BFS TELEFUNKEN Semiconductors 2200 MHz / 200 MHz Twin PLL Description U2784B is a low power twin PLL manufactured with TELEFUNKEN’s advanced UHF process. The maximum operating frequency is 2200 MHz and 200 MHz respec tively. It features a wide supply voltage range from 2.7 to