BFR90 application
Abstract: BFR90 transistor BFR90 BFR90 amplifier
Contextual Info: BFR90 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90 Marking: BFR90 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base
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bfr90d-7402517-apr-96bfr90 application+2bfr90 transistorbfr90 amplifier
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BFR90 transistor
Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Contextual Info: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50
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bfr9024-mar-97bfr90 transistortelefunken ha 680+2bfr90 amplifierbfr90s
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BFR90 transistor
Abstract: BFR90 application "Small Signal Amplifiers" BFR90 s-tech BFR90 MOTOROLA BFR90D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Contextual Info: MOTOROLA Order this document by BFR90/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR90 Designed primarily for use in high–gain, low–noise, small–signal amplifiers. Also used in applications requiring fast switching times.
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bfr90/dbfr90devicebfr90/dbfr90 transistor+6bfr90 applicationsmall signal amplifierss-techbfr90 motorolabfr90dhigh voltage fast-switching npn power transistor
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Bfr90
Abstract: BFR90 application
Contextual Info: ViSHAY ▼ _ BFR90 _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFR90
Abstract: BFR90 application BFR90 amplifier
Contextual Info: BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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bfr90d-7402520-jan-99bfr90 application+1bfr90 amplifier
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BFR90
Abstract: BFR90 transistor transistor BFR90
Contextual Info: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency
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bfr90d-7402520-jan-99bfr90 transistor+1transistor bfr90
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BFR90 transistor
Abstract: BFR90 BFR90 application BFR90 amplifier
Contextual Info: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency
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bfr90d-7402520-jan-99bfr90 transistor+2bfr90 applicationbfr90 amplifier
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BFR90 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR90 The RF Line NPN Silicon High-Frequency TVansistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. Also used in applications requiring fast switching times. • High Current-Gain — Bandwidth Product —
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bfr90bfr90 transistor |
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BFR90
Abstract: BFR 90
Contextual Info: BFR 90 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90 Marking Plastic case XTO 50
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lm 538 n ic
Abstract: BFR90
Contextual Info: TEMIC BFR90 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
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bfr90d-7402531-oct-97lm 538 n ic |
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BFR90 transistor
Abstract: BFR90 BFR90 application marking A3 amplifier 449 marking amplifier j02
Contextual Info: BFR90 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency
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bfr90d-7402531-oct-97bfr90 transistor+3bfr90 applicationmarking a3 amplifier 449marking amplifier j02
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BFR90
Abstract: transistor BFR90 BFR90 transistor
Contextual Info: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency
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brf90
Abstract: BFR90 BFR90 application BFR90 transistor transistor bfr96 2N4427 2N5109 2N5179 2N6255 MRF4427
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
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bfr90brf90gbrf90bfr90 application+7bfr90 transistortransistor bfr962n44272n51092n51792n6255mrf4427
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BFR90 transistor
Abstract: BFR90
Contextual Info: BFR90 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039
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BFR90
Abstract: BFR90 application
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
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bfr90mrf571bfr91mrf545+2mrf544bfr90 application
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BFR90
Abstract: 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
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bfr90mrf571bfr91mrf545+9mrf544msc13072n44272n51792n6255mrf4427mrf553mrf559mrf607
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BFR90
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
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BFR90
Contextual Info: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T
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1J53-0
Abstract: marking s11 BFR90 amplifier BFR90
Contextual Info: BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E 2
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bfr902002/95/ec2002/96/ecd-74025+429-apr-051j53-0marking s11bfr90 amplifier
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BFR90
Abstract: BFR90 transistor s2190
Contextual Info: BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E 2
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BFR90
Abstract: BFR90 application s2190
Contextual Info: Not for new design, this product will be obsoleted soon BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 3 B 1 C 3 High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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1377 transistor
Abstract: ITT S11 0 280 130 055
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise, small-signal amplifiers. Also used in applications requiring fast switching times. • High Current-Gain — Bandwidth Product —
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17a-01bfr90b3b7254010fc+31377 transistoritt s110 280 130 055
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z0140
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor Designed prim arily for use in high-gain, low -noise, sm all-signal amplifiers. Also used in applications requiring fast switching times. • High C urrent-G ain — Bandwidth Product —
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MOTOROLA 2N5179
Abstract: 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N4957 2N5032 2N5583
Contextual Info: Low-Noise The low-noise devices listed are produced w ith carefully controlled rj, and f j to optim ize device noise performance. Devices listed in the m atrix are classified according to noise figure perform ance versus frequency. dB 1.5 2.0 2.5 3.0 3.5
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2n58292n5031mrf9042n4957+92n5032motorola 2n51792n5160bfr96mm4049mrf531bfr90 motorolamrf9112n5583
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